IEEE Electron Device Lett.
 2006
DOI: 10.1109/led.2006.879043
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High-efficiency enhancement-mode power heterojunction FET with buried p/sup +/-GaAs gate structure for low-voltage-operated mobile applications

Y. Bito
1
,
Y. Yamakawa
2
,
Shin‐ichi Tanaka
3
et al.
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