High-efficiency fiber-to-chip grating couplers realized using an advanced CMOS-compatible Silicon-On-Insulator platform

Vermeulen, Diedrik; Selvaraja, Shankar Kumar; Verheyen, Peter; Lepage, Guy; Bogaerts, Wim; Absil, P.; Thourhout, Dries Van; Roelkens, G.

doi:10.1364/oe.18.018278

Cited by 376 publications

(203 citation statements)

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“…According to [7], [8], an extra Si overlay (polycrystalline or amorphous) with a thickness of 160 nm can be locally deposited on top of a 1D GC to increase the fraction of the upward diffracted power, so as to increase the waveguide-tofiber coupling efficiency. The cross section of such a GC is shown in figure 2(a).…”

Section: (B)) L(α)mentioning

confidence: 99%

“…On the other hand, studies on improving the coupling efficiency and bandwidth of a GC have also been intensively reported [2], [6]. We reported that a silicon overlay can be deposited on top of a 1D GC to increase the coupling efficiency [7], [8]. However, there has been little work so far on the designs that combine high coupling efficiency with low back reflection in a CMOS-compatible SOI platform.…”

Section: Introductionmentioning

confidence: 99%

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Reflectionless Tilted Grating Couplers With Improved Coupling Efficiency Based on a Silicon Overlay

Tian

et al. 2013

IEEE Photon. Technol. Lett.

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Section: (B)) L(α)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Reflectionless Tilted Grating Couplers With Improved Coupling Efficiency Based on a Silicon Overlay

Tian

et al. 2013

IEEE Photon. Technol. Lett.

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“…This method has already been well studied at telecom wavelengths [42,43], with coupling losses as low as -0.75 dB experimentally attained by Luxtera [44]. Additionally, grating couplers can be placed anywhere on the chip, affording flexibility in input/output coupling location.…”

Section: Grating-coupled Ring Resonators In a Sos Platformmentioning

confidence: 99%

Silicon photonic devices for mid-infrared applications

Shankar

Lončar

2014

Nanophotonics

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Abstract:The mid-infrared (IR) wavelength region (2-20 µm) is of great interest for a number of applications, including trace gas sensing, thermal imaging, and freespace communications. Recently, there has been significant progress in developing a mid-IR photonics platform in Si, which is highly transparent in the mid-IR, due to the ease of fabrication and CMOS compatibility provided by the Si platform. Here, we discuss our group's recent contributions to the field of silicon-based mid-IR photonics, including photonic crystal cavities in a Si membrane platform and grating-coupled high-quality factor ring resonators in a silicon-on-sapphire (SOS) platform. Since experimental characterization of microphotonic devices is especially challenging at the mid-IR, we also review our mid-IR characterization techniques in some detail. Additionally, pre-and post-processing techniques for improving device performance, such as resist reflow, Piranha clean/HF dip cycling, and annealing are discussed.

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“…We extended the framework to control our measurement hardware, and we can incorporate test and measurement information in our design. For instance, we can extract the positions of the optical input and output ports (using vertical grating couplers [11]) from the mask layout to program a probe station equipped with high-precision fiber position stages.…”

Section: Integrated Simulationmentioning

confidence: 99%