Post-Transition Metals 2021
DOI: 10.5772/intechopen.94365
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High-Efficiency GaAs-Based Solar Cells

Abstract: The III-V compound solar cells represented by GaAs solar cells have contributed as space and concentrator solar cells and are important as sub-cells for multi-junction solar cells. This chapter reviews progress in III-V compound single-junction solar cells such as GaAs, InP, AlGaAs and InGaP cells. Especially, GaAs solar cells have shown 29.1% under 1-sun, highest ever reported for single-junction solar cells. In addition, analytical results for non-radiative recombination and resistance losses in III-V compou… Show more

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Cited by 15 publications
(10 citation statements)
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“…The III-V compound solar cells are significant as multi-junction solar cells' sub-cells and have made contributions as space and concentrator solar cells. [36] High efficiency using III-V compound single-junction solar cells has been established as a consequence of research and development: 29.1 % for GaAs, 24.2 % for InP, 16.6 % for AlGaAs, and 22 % for InGaP solar cells. [37,38]…”
Section: P E R S O N a L A C C O U N T T H E C H E M I C A L R E C O R Dmentioning
confidence: 99%
See 1 more Smart Citation
“…The III-V compound solar cells are significant as multi-junction solar cells' sub-cells and have made contributions as space and concentrator solar cells. [36] High efficiency using III-V compound single-junction solar cells has been established as a consequence of research and development: 29.1 % for GaAs, 24.2 % for InP, 16.6 % for AlGaAs, and 22 % for InGaP solar cells. [37,38]…”
Section: P E R S O N a L A C C O U N T T H E C H E M I C A L R E C O R Dmentioning
confidence: 99%
“…In comparison to crystalline Si sun cells, the III−V compound solar cells represented by GaAs solar cells offer benefits such as the potential for high efficiency, thin‐film technology, excellent temperature coefficient, radiation resistance, and multi‐junction application. The III–V compound solar cells are significant as multi‐junction solar cells′ sub‐cells and have made contributions as space and concentrator solar cells [36] . High efficiency using III–V compound single‐junction solar cells has been established as a consequence of research and development: 29.1 % for GaAs, 24.2 % for InP, 16.6 % for AlGaAs, and 22 % for InGaP solar cells [37,38] …”
Section: Review Of Solar Cell and Bipv Technologymentioning
confidence: 99%
“…The purpose of modifying the materials is to narrow the bandgap of the semiconductor and, consequently, increase its efficiency. Table 2 lists the semiconductor band gaps [12] and cell efficiencies under STC (Standard Test Conditions): the global AM 1.5 irradiance (1000 W/m 2 ) and at a cell temperature of 25 °C [13][14][15][16][17][18][19]. The width of the energy gap in semiconductors may vary ±10 % with temperature variation.…”
Section: Cdte A-si Cis Cigsmentioning
confidence: 99%
“…Further research in the anti-radiation investigation of IIIA-VA-based materials (such as GaAs) may enable space application in various space solar panels. [210][211][212][213] With a long lifetime and high mobility in bulk systems, GaAs demonstrate the potential to avoid DD in a harsh environment. [214][215][216][217] Figure 17a shows the PL spectra of the GaAs-50 NWs at different H + ions irradiation.…”
Section: Other Types Of Semiconductors-based Tftsmentioning
confidence: 99%