High-efficiency GaInAsSb/GaAlAsSb photodiodes for 0.9-to 2.55-µm spectral range with a large-diameter active area

Андреев, И. А.; Il’inskaya, N. D.; Kunitsyna, E. V.; Mikhaĭlova, M. P.; Yakovlev, Yu. P.

doi:10.1134/1.1601665

Cited by 14 publications

(13 citation statements)

References 7 publications

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“…Sb-based photodiodes operating in the spectral range 2-5 µm are very attractive for such important applications as gas pollutant analysis, ecological monitoring, medical diagnostics, low-loss optical communications, laser rangefinding, etc [103][104][105][106][107][108][109][110][111][112][113][114][115][116]. Recently longwavelength photodiodes operating at room temperature based on InAsSb, GaInSb, InAsSbP GaInAsSb multicomponent solid solutions grown by LPE [103][104][105][106][107][108][109] as well as MBE grown InGaAs/GaAs superlattices were reported elsewhere [110].…”

Section: Type II Sb-based Photodiodes For the Spectral Range 2-5 µMmentioning

confidence: 99%

“…Type II staggered heterojunction photodiodes based on GaInAsSb/GaAlAsSb have been designed and studied [5,8,116]. A new physical approach to the design of longwavelength photodiodes based on type II heterostructures with both staggered and broken-gap alignment, grown by LPE on GaSb and InAs substrate was proposed and realized [8,117].…”

Section: Type II Sb-based Photodiodes For the Spectral Range 2-5 µMmentioning

confidence: 99%

“…Here we will consider two new photodiode structures based on type II broken-gap heterostructures [116]. Band energy diagrams and spectral responses of these photodiodes are shown in figure 22.…”

Section: Type II Sb-based Photodiodes For the Spectral Range 2-5 µMmentioning

confidence: 99%

See 2 more Smart Citations

Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

Mikhaĭlova¹,

Moiseev²,

Yakovlev³

2004

Semicond. Sci. Technol.

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This review deals with a study of optical and magnetotransport phenomena at a type II arsenide-antimonide heterojunction with a broken-gap alignment. A fundamental feature of this structure is partial overlapping of the InAs conduction band with the GaSb-rich solid solution valence band. In such a heterostructure, electrons and holes are spatially separated and localized in self-consistent quantum wells formed on both sides of the heterointerface. This leads to unusual tunnelling-assisted radiative recombination transitions and novel transport properties. Results of a pioneering study of interface-related luminescence in type II broken-gap GaInAsSb/InAs heterostructures, with a high quality abrupt heteroboundary, grown by the LPE method, are presented. The energy band diagram of the type II broken-gap GaInAsSb/InAs(GaSb) heterostructures and band overlapping control, depending on a doping level and epilayer composition of quaternary solid solution, are discussed. A 2D-electron channel with high Hall mobility at the p-GaInAsSb/p-InAs interface was found and examined. A great deal of attention is paid to quantum transport properties of the semimetal channel in a wide magnetic field range (up to 18 T) at low temperatures. A cyclotron resonance study was used to obtain data on the energy spectrum at the interface and to estimate effective masses for subbands in the semimetal channel. The intriguing behaviour of the 2D-electron system in the presence of localized holes in high magnetic fields and the first observation of integer quantum Hall effect plateaus on the type II single GaInAsSb/InAs heterointerface formed by LPE are demonstrated. A tunnelling-injection laser with high asymmetric band offset confinements based on the type II broken-gap heterojunction is considered. Applications of the interface-induced phenomena in luminescent and transport properties for the design of novel mid-IR optoelectronic devices and Hall sensors are briefly reviewed.

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Section: Type II Sb-based Photodiodes For the Spectral Range 2-5 µMmentioning

confidence: 99%

Section: Type II Sb-based Photodiodes For the Spectral Range 2-5 µMmentioning

confidence: 99%

See 1 more Smart Citation

Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

Mikhaĭlova¹,

Moiseev²,

Yakovlev³

2004

Semicond. Sci. Technol.

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“…The top wavelength of photodetectors based on GaInAsSb/GaAlAsSb is 2550 nm. But these photodetec tors are not presently commercially available [2].…”

Section: Introductionmentioning

confidence: 99%

Development of New Sensitive Broadband Elements of Sensors Based on Carbon Nanotubes

et al. 2016

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A new type of sensitive elements based on carbon nanotubes (SECNT) was developed for photoelectric detectors of optical radiation. The optical parameters of the SECNT were tested. The working wavelength range was found to be 500 8000 nm. The maximum photosensitivity of the SECNT reached 0.7 mA/W in the near IR range of the spectrum. The time resolution of the sensitive element was no worse than 30 μsec.

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“…Sulfur and polyimide based passivation methods were found that it was efficient in suppressing leakage current [19,20]. Besides that, current mechanisms other than diffusion and generation-recombination (G-R) [21,22] were observed and these unknown mechanisms were suggested to be trapassisted tunneling [21], band to band tunneling [22,23] and surface leakage [24]. However, evidences that support these claims were indirect [21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Trap-assisted tunneling current and quantum efficiency loss in InGaAsSb short wavelength infrared photo detectors

Wang²,

Jiang³

et al. 2022

Semicond. Sci. Technol.

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We report the trap-assisted tunneling current and quantum efficiency loss in short wavelength infrared In0.22Ga0.78As0.2Sb0.8 photo detectors. Combining experiment data with a current-voltage model, we found that the trap-assisted tunneling current was boosted by increasing Beryllium (Be) doping in active region at room temperature. However higher Be doping level imposes no negative impacts on quantum efficiency. Four traps with energy levels located at 49 meV, 60 meV, 155 meV and 199 meV below conduction band minimum in a In0.22Ga0.78As0.2Sb0.8 alloy are extracted from the fitting of I-V curves. Transparency measurement of an un-intentional doped In0.22Ga0.78As0.2Sb0.8 sample yields an absorption coefficient of 5191 cm-1 at 2.25 μm. Combining with the measured value of absorption coefficient, the quantum efficiency dependence on diode length of In0.22Ga0.78As0.2Sb0.8 photo detectors is presented. Finally, by fitting quantum efficiencies of In0.22Ga0.78As0.2Sb0.8 photo detectors, we obtained that the minority electrons diffusion length is larger than 4 μm and the minority holes diffusion length is 0.2 μm. Quantum efficiency loss occurs at top N region of In0.22Ga0.78As0.2Sb0.8 photo detectors due to a short holes diffusion length.

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High-efficiency GaInAsSb/GaAlAsSb photodiodes for 0.9-to 2.55-µm spectral range with a large-diameter active area

Cited by 14 publications

References 7 publications

Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

Development of New Sensitive Broadband Elements of Sensors Based on Carbon Nanotubes

Trap-assisted tunneling current and quantum efficiency loss in InGaAsSb short wavelength infrared photo detectors

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