High efficiency GaN-based LEDs and lasers on SiC

Edmond, J. A.; Abare, A. C.; Bergman, Michael; Bharathan, Jayesh; Bunker, Kristin; Emerson, David R.; Haberern, K. W.; Ibbetson, J. P.; Leung, M. S. H.; Russel, Phil; Slater, D.B.

doi:10.1016/j.jcrysgro.2004.08.056

Cited by 134 publications

(75 citation statements)

References 3 publications

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“…InGaN optoelectronics technologies are unique in that they have succeeded despite their common use of non-lattice-matched foreign substrates (such as sapphire and SiC) and the resulting high (≈10 8 cm −2 ) defect densities. [33,34] However, even these now-ubiquitous InGaN optoelectronics technologies improve markedly when they make use of low-defect-density single-crystal GaN substrates. We cannot discount the possibility that AlGaN technologies could be developed with similarly good performance on non-lattice-matched foreign substrates, despite high defect densities.…”

Section: Single-crystal Substratesmentioning

confidence: 99%

“…6-7%), can be attributed to the low piezoelectric constant, e 33 , of the PVD-AlN thin-film itself. Recent studies have demonstrated that the piezoelectric coefficient of PVD-AlN films can be increased by alloying with scandium (Sc), [245,246] or by co-doping of AlN using Mg-Zr or Mg-Hf.…”

Section: Electromechanical Filtersmentioning

confidence: 99%

“…While early work has been published on AlGaN films for acoustic resonators, those results may have been limited by the fabrication processes [248][249][250] or material quality. [251] Recently, simulations of AlN acoustic resonators using undoped PVD AlN and undoped MOCVD-AlN predicted significant benefits of using highly oriented, single-crystal AlN films with high e 33 . [252] Further, recent results on single-crystal MOCVD-AlGaN piezoelectric films on silicon substrates were demonstrated as a preliminary stepping-stone to MOCVDAlN.…”

Section: Electromechanical Filtersmentioning

confidence: 99%

See 2 more Smart Citations

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

1,057

463

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Section: Single-crystal Substratesmentioning

confidence: 99%

Section: Electromechanical Filtersmentioning

confidence: 99%

Section: Electromechanical Filtersmentioning

confidence: 99%

See 1 more Smart Citation

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

1,057

463

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“…Kneissl et al also realized ultraviolet AlGaN multiple-quantum-well laser diodes with emission wavelengths between 359.7 and 361.6 nm in the same year [11]. Furthermore, Edmond et al achieved cw laser diode operation from 348 to 410 nm by using AlInGaN/AlGaN material system grown on SiC substrates in 2004 [12]. Recently, GaN/AlGaN multiple-quantum-well ultraviolet laser diode with 350.9-nm-lasing wavelength has been demonstrated by Iida et al [7], [13], [14].…”

Section: Introductionmentioning

confidence: 99%

Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN Multiple-Quantum-Well Laser Diodes

Chen

et al. 2008

J. Lightwave Technol.

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Abstract-Theoretical analysis for different active layer structures is performed to minimize the laser threshold current of the ultraviolet GaN/AlGaN multiple-quantum-well laser diodes by using advanced device simulation. The simulation results show that the lower threshold current can be obtained when the number of quantum wells is two or three and the aluminum composition in the barrier layer is about 10%-12%. This result is attributed to several different effects including electron leakage current, nonuniform carrier distribution, interface charge density induced by spontaneous and piezoelectric polarization, and optical confinement factor. These internal physical mechanisms are investigated by theoretical calculation to analyze the effects of quantum-well number and different aluminum compositions in barrier layer on laser threshold properties. Furthermore, the effect of quantum-well thickness is discussed as well. It is found that the optimal quantum-well thickness is about 3 nm due to the balance of the advantages of a large confinement factor against the disadvantages of significant quantum-confined Stark effect (QCSE).

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“…The first milliwatt-level LEDs in the < 300 nm region had just been demonstrated [1], including milliwatt-level performance at 275-300 nm by our Sandia team [2,3]. Pulsed laser diodes from GaN and AlGaN alloys had been demonstrated at 357.9 nm [4], and 350.1 nm [5], and very short-lived (seconds) pulsed lasing had been demonstrated down to 343 nm [6]. Overall, significant LED improvements were needed in the areas of output power and efficiency, spectral purity and device lifetimes.…”

Section: Introduction To Algan-based Alloys and Light-emitting Devicesmentioning

confidence: 99%

Final LDRD report : development of advanced UV light emitters and biological agent detection strategies.

Figiel¹,

Crawford²,

Banas³

et al. 2007

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We present the results of a three year LDRD project which has focused on the development of novel, compact, ultraviolet solid-state sources and fluorescence-based sensing platforms that apply such devices to the sensing of biological and nuclear materials. We describe our development of 270-280 nm AlGaN-based semiconductor UV LEDs with performance suitable for evaluation in biosensor platforms as well as our development efforts towards the realization of a 340 nm AlGaN-based laser diode technology. We further review our sensor development efforts, including evaluation of the efficacy of using modulated LED excitation and phasesensitive detection techniques for fluorescence detection of bio molecules and uranyl-containing compounds.4

show abstract

High efficiency GaN-based LEDs and lasers on SiC

Cited by 134 publications

References 3 publications

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN Multiple-Quantum-Well Laser Diodes

Final LDRD report : development of advanced UV light emitters and biological agent detection strategies.

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