High-Efficiency GaN/SiC Doubler Terahertz Monolithic Integrated Circuit at 175 GHz

Zhang, Lisen; Gu, Guodong; Liang, Shixiong; Li, Yuanjie; Song, Xubo; Xu, Ping; Hao, Xiaolin; Bu, Aimin; Feng, Zhihong

doi:10.1109/led.2023.3239653

Cited by 3 publications

References 18 publications

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A 220 GHz GaN‐based monolithic integrated frequency doubler delivering over 0.25 W output power

Zheng,

Zhang,

Dai

et al. 2024

Micro & Optical Tech Letters

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A 220 GHz GaN‐based monolithic integrated frequency doubler with high continuous‐wave output power has been developed. The doubler achieves improved heat dissipation by establishing the terahertz (THz) monolithic integrated circuit topology with GaN Schottky barrier diodes integrated on a high thermal conductivity SiC substrate. It features six anodes to enhance the power‐handling capabilities. A refractory Schottky metal stack is adopted for better thermal stability. The doubler realizes satisfactory performance by introducing the suspended microstrip and an all‐in‐one output structure. For verification, a prototype of the proposed frequency doubler was fabricated and tested. Measured results show that the proposed doubler produces a continuous‐wave output power of 255 mW at 220 GHz with an efficiency of 14.6%, exhibiting excellent potential for powerful THz sources.

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A 220 GHz GaN‐based monolithic integrated frequency doubler delivering over 0.25 W output power

Zheng,

Zhang,

Dai

et al. 2024

Micro & Optical Tech Letters

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GaN planar SBD grown and fabricated on SiC substrate with a cutoff frequency of 2.17 THz

Gu,

Hao,

Wang

et al. 2024

Semicond. Sci. Technol.

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To attain a higher cutoff frequency in GaN planar Schottky Barrier Diodes (SBDs), we investigated the relationship between various structural parameters of the device and its electrical characteristics. Our investigation primarily focused on how the series resistance and junction capacitance are affected by the thickness and doping concentration of the N- GaN layer, as well as the anode size, with the goal of improving the diode's operating frequency.The results indicate that by employing an appropriate doping concentration and epitaxial layer thickness, the cutoff frequency of GaN diodes can exceed 2 THz. At last, by increasing the N- GaN doping concentration to 8e17 cm-3 and decreasing the N- GaN layer thickness to100 nm, the fabricated GaN SBD with a diameter of 1.2 μm and cathode-to-anode distance of0.8 μm exhibits a series resistance (Rs) of 27.2 Ω and a zero-biased junction capacitance (Cj0) of 1.69 fF, yielding a record cutoff frequency of 2.17 THz. The results suggest that the working frequency of GaN-based multipliers could be further improved for high-power terahertz source applications.

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The Design of a Monolithic Wideband GaN-Based Frequency Doubler for G-Band

Luo,

Zhang

2023

2023 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC)

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High-Efficiency GaN/SiC Doubler Terahertz Monolithic Integrated Circuit at 175 GHz

Cited by 3 publications

References 18 publications

A 220 GHz GaN‐based monolithic integrated frequency doubler delivering over 0.25 W output power

A 220 GHz GaN‐based monolithic integrated frequency doubler delivering over 0.25 W output power

GaN planar SBD grown and fabricated on SiC substrate with a cutoff frequency of 2.17 THz

The Design of a Monolithic Wideband GaN-Based Frequency Doubler for G-Band

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