High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111)

Chang, Yi‐Lu; Wang, J. L.; Li, F.; Mi, Zetian

doi:10.1063/1.3284660

Cited by 117 publications

(113 citation statements)

References 19 publications

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“…GaN nanowires then form spontaneously on various substrates without the need of any metal droplets that are required for many other semiconductor materials to induce the vapor-liquid-solid growth of one-dimensional nanostructures [4][5][6]. One of the distinct advantages of the spontaneous formation and subsequent uniaxial growth of GaN nanowires is the possibility to realize abrupt axial heterojunctions between different III-N compounds by simply switching the group III supply [7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Elastic versus Plastic Strain Relaxation in Coalesced GaN Nanowires: An X-Ray Diffraction Study

2016

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The coalescence in dense arrays of spontaneously formed GaN nanowires proceeds by bundling: adjacent nanowires bend and merge at their top, thus reducing their surface energy at the expense of the elastic energy of bending. We give a theoretical description of the energetics of this bundling process. The bending energy is shown to be substantially reduced by the creation of dislocations at the coalescence joints. A comparison of experimental and calculated x-ray diffraction profiles from ensembles of bundled nanowires demonstrates that a large part of the bending energy is indeed relaxed by plastic deformation. The residual bending manifests itself by extended tails of the diffraction profiles.

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Section: Introductionmentioning

confidence: 99%

Elastic versus Plastic Strain Relaxation in Coalesced GaN Nanowires: An X-Ray Diffraction Study

2016

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“…This technique [12][13][14][15] and also vapor phase deposition methods [16][17][18] have been used to produce InGaN NCs [13,14,16,18] and nanocolumnar InGaN/GaN quantum heterostructures [12,15,17], providing efficient room-temperature (RT) light emission, probably resulting from carrier localization, as already well-known for InGaN alloys [19]. Emission over the entire visible spectrum was achieved by control of the In incorporation.…”

Section: Introductionmentioning

confidence: 99%

Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns

Lefèbvre

Albert²,

Ristić³

et al. 2012

Superlattices and Microstructures

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GaN and InGaN nanocolumns of various compositions are studied by room-temperature photoluminescence (PL) under different ambient conditions. GaN nanocolumns exhibit a reversible quenching upon exposure to air under constant UV excitation, following a t 1/2 time dependence and resulting in a total reduction of intensity by 85-90%, as compared to PL measured in vacuum, with no spectral change. This effect is not observed when exposing the samples to pure nitrogen. We attribute this effect to photoabsorption and photodesorption of oxygen that modifies the surface potential bending. InGaN nanocolumns, under the same experimental conditions do not show the same quenching features: The high-energy part of the broad PL line is not modified by exposure to air, whereas a lower-energy part, which does quench by 80-90%, can now be distinguished. We discuss the different behaviors in terms of carrier localization and possible composition or strain gradients in the InGaN nanocolumns.

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“…Whereas growth of GaN on a 2D AlN layer invariably results in the formation of GaN QDs according to the SK growth mode, it appears that NW morphology indeed leads to the growth of GaN NDs. In the case of a large in-plane lattice mismatch insufficiently accommodated by NW geometry, the formation of 3D islands is preferred, as illustrated in Figure 2c by a picture exemplifying the growth of high In content InGaN islands on top of a GaN NW [19,20]. these predictions, it has been found that individual InGaN dot-in-NWs, such as the ones shown in Figure 2c, indeed exhibit an In content gradient from the base to the top, related to the easy elastic deformation of the tip of the island.…”

Section: The Case Of Spontaneously Nucleated Nws Grown By Molecular Bmentioning

confidence: 99%

III-Nitride quantum dots in nanowires: growth, structural, and optical properties

Daudin¹

2014

Turk J Phys

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Nanowires (NWs) have emerged as a platform to build complex, self-assembled, defect-free nanostructures.In particular, the growth of single islands/disks of various III-nitride combinations (InGaN in GaN, GaN in AlN, AlGaN in AlN) are possible in NW heterostructures, extending the field of experimental quantum dot exploration. Specific to NWs, the possibility to disperse them paves the way to probe and investigate only a single wire/dot.In the present article, the growth of GaN disks/islands and InGaN islands as well as their optical properties at the nanometer scale will be reviewed. Besides the intentional growth of QD-in NW heterostructures, special attention will be paid to compositional fluctuations in ternary alloy nanowires, which also lead to a quantum dot-like behavior. Specific to NW geometry, optical emission is expected to exhibit a high degree of polarization along the NW axis, opening a pathway to the practical realization of polarized single photon emitters in a wide range of wavelengths.

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High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111)

Cited by 117 publications

References 19 publications

Elastic versus Plastic Strain Relaxation in Coalesced GaN Nanowires: An X-Ray Diffraction Study

Elastic versus Plastic Strain Relaxation in Coalesced GaN Nanowires: An X-Ray Diffraction Study

Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns

III-Nitride quantum dots in nanowires: growth, structural, and optical properties

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