High Efficiency Light Emission Devices in Silicon

Castagna, Maria Eloisa; Coffa, S.; Monaco, Mariantonietta; Muscará, Anna; Caristia, L.; Lorenti, Simona; Messina, Alberto

doi:10.1557/proc-770-i2.1

Cited by 11 publications

(8 citation statements)

References 7 publications

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“…In the same year, STmicroelectronics in Italy fabricated a high efficient electroluminescent Er-doped device [21] similarly to what reported by the University of Catania [22].…”

Section: Introduction: Silicon Photonicsmentioning

confidence: 59%

“…Pure bulk Si 1% at 200 K [66] Porous silicon 0.37% [159] Si-nc in SiO2 0.03% [44,160] Si-nc in SiNy <10 −3 % [119,158] Er: Si-nc in SiO2 0.2% [21] C: Si-nc in SiO2 the nano-Si, where energetic electrons tunnel through the dielectric by a Fowler-Nordheim (F-N) process (Fig. 20).…”

Section: Methodsmentioning

confidence: 99%

“…The main challenge is to get efficient carrier injection through the dielectrics where the Si-nc are embedded: different nano-Si-based materials have been proposed to reach the goal. Their electroluminescence (EL) is mostly based either in emission of light from Si nanoparticles (typically in the red) [152,153] or in the localization of the injected carries at luminescent centers such as C or Er 3+ ions (green and infrared regions) [21,154]. In Table 4, a comparison of the best power efficiency of electroluminescent devices based on different nano-Si materials is shown.…”

Section: Light-emitting Diodesmentioning

confidence: 99%

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Nanosilicon photonics

Daldosso¹,

Pavesi

2009

Laser & Photonics Reviews

162

105

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Silicon photonics is no longer an emerging field of research and technology but a present reality with commercial products available on the market, where low-dimensional silicon (nanosilicon or nano-Si) can play a fundamental role. After a brief history of the field, the optical properties of silicon reduced to nanometric dimensions are introduced. The use of nano-Si, in the form of Si nanocrystals, in the main building blocks of silicon photonics (waveguides, modulators, sources and detectors) is reviewed and discussed. Recent advances of nano-Si devices such as waveguides, optical resonators (linear, rings, and disks) are treated. Emphasis is placed on the visible optical gain properties of nano-Si and to the sensitization effect on Er ions to achieve infrared light amplification. The possibility of electrical injection in light-emitting diodes is presented as well as the recent attempts to exploit nano-Si for solar cells. In addition, nonlinear optical effects that will enable fast all-optical switches are described.

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“…In the same year, STmicroelectronics in Italy fabricated a high efficient electroluminescent Er-doped device [21] similarly to what reported by the University of Catania [22].…”

Section: Introduction: Silicon Photonicsmentioning

confidence: 59%

Section: Methodsmentioning

confidence: 99%

Section: Light-emitting Diodesmentioning

confidence: 99%

See 1 more Smart Citation

Nanosilicon photonics

Daldosso¹,

Pavesi

2009

Laser & Photonics Reviews

162

105

View full text Add to dashboard Cite

show abstract

“…While the electrical properties of the Ce-ORSO and silicate thin films have not yet been explored, EL of Ce-doped SiO 2 MOSLEDs formed by implanting Ce into SiO 2 has been demonstrated [27][28][29]. As with ORSO samples, the authors report on the observation of luminescence from these samples in the absence of Si-ncs.…”

Section: Luminescence Of Rare Earth-doped Silicon-based Materialsmentioning

confidence: 99%

Lighting Applications of Rare Earth‐Doped Silicon Oxides

Roschuk

Wójcik

et al. 2010

Silicon Nanocrystals

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Silicon nanoclusters (Si-ncs) are of substantial interest as they play a significant role in the development of Si-based light sources [1,2]. One of the main application areas is in integrated photonics for telecommunications and computing; however, there is also a substantial market for the use of these materials in lighting and displays. Lighting accounts for approximately 20% of the $60 billion electricity market in the United States [3]. The potential to tap this market, combined with the inefficiency of incandescent bulbs, has driven research over the past decades in the area of solidstate lighting (SSL). The market for both incandescent and fluorescent light sources has been steadily dwindling with a shift toward the development of more efficient, cheaper, and environment friendly alternatives, such as SSL [4,5]. In 2007, the market for LED lighting was estimated at $330 million (a 60% increase over the previous year) and is projected to grow to $1.4 billion by 2012 [6].As with light sources for integrated photonics, the SSL market relies primarily on III-V, II-VI, or phosphor-based materials and, more recently, organic light emitting diodes (OLEDs) [5]. With the ability to attain efficient luminescence in Si-nc-based systems, however, the possibility of an all-Si approach has become attractive. Such an approach would allow manufacturers to use of the same large-scale production and processing facilities as used by the microelectronics and solar cell industries while maintaining low cost. There are two performance metrics generally of interest for solid-state lighting, the performance (in lumens) per dollar and the performance per watt (efficacy). Figure 17.1 illustrates these metrics for several common lighting sources. While LED and OLED technologies currently lead in terms of efficacy, recently explored RE-doped silicon-based materials (shown on the graph as Rare Earth Films) have a clear advantage in terms of the performance per dollar (data courtesy of Group IV Semiconductor Inc.). Furthermore, integration with the necessary electronics for driving Si-based lighting cells or pixels would then be easily achieved due to the use of a Si-platform. In particular, the use of rare earth dopants to attain specific colored emissions for mixing to obtain white light presents a viable pathway to Si-based lighting. Such an approach borrows from that commonly used with color-converting phosphors, where rare earths are routinely used, while incorporating the rare earth elements into a silicon-based host for the advantages in fabrication.

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“…Photoluminescence (PL) from rare-earth (RE) ions doped silicon-based materials [1][2][3][4] including from various silicon nanoparticles (Si-NP), have attracted much attention owing to their promising applications in opto-electronic and photonic devices. One of these examples is amorphous Si-in-SiN x thin film containing dense Si-NP of variable size [5][6][7] and Si rich SiO 2 (SRSO) is probably the most extensively exploration [8][9][10].…”

Section: Introductionmentioning

confidence: 99%