High-efficiency lithium niobate modulator for K band operation

Ahmed, Abu Naim R.; Shi, Shouyuan; Mercante, Andrew; Nelan, Sean; Yao, Peng; Prather, Dennis W.

doi:10.1063/5.0020040

Cited by 66 publications

(31 citation statements)

References 30 publications

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“…This is because thin-film LN modulators offer significantly improved voltage-bandwidth performance over legacy LN platforms all while preserving key LN material advantages such as linear response, high extinction ratio, high optical power handling ability and low on-chip insertion loss. However, for thin-film LN modulators, V π , especially at frequencies > 50 GHz, remains > 3 V [10][11][12]. Extrapolating to 100 GHz shows an expected V π > 4 V. Such performances have also been corroborated theoretically as being close to the traditional design limit [13][14][15][16].…”

Section: Segmented Traveling Wave Ln Modulator Designmentioning

confidence: 67%

Breaking voltage-bandwidth limits in integrated lithium niobate modulators using micro-structured electrodes

Kharel

Reimer

Luke

et al. 2020

Preprint

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Electro-optic modulators with low voltage and large bandwidth are crucial for both analog and digital communications. Recently, thin-film lithium niobate modulators have enable dramatic performance improvements by reducing the required modulation voltage while maintaining high bandwidths. However, the reduced electrode gaps in such modulators leads to significantly higher microwave losses, which limit electro-optic performance at high frequencies. Here we overcome this limitation and achieve a record combination of low RF half-wave voltage of 1.3 V while maintaining electro-optic response with 1.8-dB roll-off at 50 GHz. This demonstration represents a significant improvement in voltage-bandwidth limit, one that is comparable to that achieved when switching from legacy bulk to thin-film lithium niobate modulators. Leveraging the low-loss electrode geometry, we show that sub-volt modulators with > 100 GHz bandwidth can be enabled.

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Section: Segmented Traveling Wave Ln Modulator Designmentioning

confidence: 67%

Breaking voltage-bandwidth limits in integrated lithium niobate modulators using micro-structured electrodes

Kharel

Reimer

Luke

et al. 2020

Preprint

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“…[31] The mode confinement factor (Γ LN ) in lithium niobate is calculated to be ≈60% for a silicon nitride width of 1 μm by using the finite element method, [32] which is comparable to the values reported previously for electro-optic modulation. [29,30] As shown in Figure 1, the birefringence of lithium niobate means that light polarized along crystallographic Z direction experiences the extraordinary refractive index (n e ) of ≈2.138, while light polarized along the crystallographic X and Y directions experiences the ordinary refractive index (n o ) of ≈2.211, at the wavelength of 1550 nm. This leads to different effective refractive indices of optical modes when propagating along different waveguide directions.…”

Section: Modal Behaviors Along Different Crystallographic Directions Of Lithium Niobatementioning

confidence: 99%

“…In this contribution, we investigate and demonstrate mode and polarization (de)multiplexers by introducing silicon nitride as a loading material to the surface of LNOI platform. [27][28][29][30] Compared to lithium niobate, silicon nitride has a slightly lower refractive index which is important to achieve a strong mode confinement in lithium niobate, similar transparency window, very low material loss, and commercially available fabrication pro-cesses. Thus, the silicon nitride loaded LNOI platform offers an attractive choice for combining active and passive components to achieve multi-functional, high-performance, and low-cost PICs for future high-speed optical interconnects, while avoiding the direct etching of lithium niobate.…”

Section: Introductionmentioning

confidence: 99%

Mode and Polarization‐Division Multiplexing Based on Silicon Nitride Loaded Lithium Niobate on Insulator Platform

Han

Jiang

Frigg

et al. 2021

Laser & Photonics Reviews

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Mode and polarization-division multiplexing technologies (MDM and PDM)can offer considerable parallelism for optical multiplexing biosensors, complex optical neural networks, and high-capacity optical interconnects, while requiring only a single-wavelength laser source. Thanks to the mature fabrication processes of silicon nitride and superior material properties of lithium niobate, the silicon nitride loaded lithium niobate on insulator (LNOI) platform allows the integration of high-speed optical modulators and optical (de)multiplexing devices to achieve high-capacity and low-cost photonic integrated circuits suitable for data communication applications. In this contribution, MDM and PDM are investigated in a silicon nitride loaded LNOI (X-cut) platform. As a proof of concept, an asymmetrical directional coupler-based mode ( de)multiplexer (MMUX) and polarization splitter-rotator (PSR) are designed, fabricated, and experimentally demonstrated. The measured insertion losses are lower than 1.46 and 1.49 dB, while the inter-modal crosstalk is lower than −13.03 and −17.75 dB for the MMUX and PSR, respectively, for a wavelength range of 1525-1565 nm. A 40 Gbps data transmission experiment demonstrates the data transmission capabilities of the fabricated devices. The measured eye diagrams are clear and wide-open, and the bit error rate measurements show reasonable power penalties, indicating good device performance.

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“…We have noted that there are also other candidates, however, silicon nitride is one of the most promising loading materials due to its similar but slightly lower refractive index and similar transparent window to lithium niobate, as well as the mature and commercially available fabrication processes. Thus, the silicon nitride loaded LNOI waveguides can preserve the excellent material property of lithium niobate whereas overcome the challenges faced by the direct etching waveguide fabrication [21][22][23] . For proof-of-concept, the SWG waveguides are used to realize spatial mode lters and polarizer which are important components in mode-division multiplexing (MDM) and polarization-division multiplexing (PDM) systems, respectively.…”

Section: Introductionmentioning

confidence: 99%

Integrated subwavelength gratings on a lithium niobate on insulator platform for mode and polarization manipulation

Han

Chen

Jiang

et al. 2022

Preprint

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Lithium niobate on insulator (LNOI) has emerged as a promising platform for photonic integrated circuits, with a fast-growing toolbox of components. In this paper, we propose, design and experimentally demonstrate compact subwavelength grating (SWG) waveguides on a LNOI platform for on-chip mode and polarization manipulation. To overcome the limitation of waveguide fabrication, the SWGs are designed and formed on a silicon nitride thin film deposited onto the surface of LNOI chip. As proof-of-concept devices, the SWG-based spatial mode filters and a TM-pass polarizer are fabricated successfully on the same chip, with the device lengths of only ~50 μm. The measured insertion losses for the devices are lower than 3.1 dB, with high extinction ratio larger than 30 dB, at a wavelength of 1550 nm. The proposed and demonstrated SWGs can serve as important building blocks in a series of mode and polarization handling devices for LNOI integrated photonics.

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High-efficiency lithium niobate modulator for K band operation

Cited by 66 publications

References 30 publications

Breaking voltage-bandwidth limits in integrated lithium niobate modulators using micro-structured electrodes

Breaking voltage-bandwidth limits in integrated lithium niobate modulators using micro-structured electrodes

Mode and Polarization‐Division Multiplexing Based on Silicon Nitride Loaded Lithium Niobate on Insulator Platform

Integrated subwavelength gratings on a lithium niobate on insulator platform for mode and polarization manipulation

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