High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si

Okyay, Ali Kemal; Nayfeh, Ammar; Saraswat, Krishna C.; Yonehara, Takao; Marshall, A. F.; McIntyre, Paul C.

doi:10.1364/ol.31.002565

Cited by 70 publications

(51 citation statements)

References 10 publications

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“…Recently, Nayfeh and associates developed multiple hydrogen annealing heteroepitaxy (MHAH) that enables low dislocation-density Ge growth on Si [2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

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Silicon-Germanium multi-quantum well photodetectors in the near infrared

Onaran¹,

Onbaşlı²,

Yeşilyurt³

et al. 2012

Opt. Express

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Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ~10 mA/cm 2 and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage. for optical communications," Appl. Phys. Lett. 81(4), 586-588 (2002 ©2012 Optical Society of America

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“…Recently, Nayfeh and associates developed multiple hydrogen annealing heteroepitaxy (MHAH) that enables low dislocation-density Ge growth on Si [2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

“…Metal-semiconductor-metal (MSM) and p-i-n type optical detectors were previously fabricated on blanket [3], and selective area grown germanium on silicon by MHAH technique are also reported earlier [5]. Low germanium content SiGe modulator devices were integrated with detectors [14].…”

Section: Introductionmentioning

confidence: 99%

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Onaran¹,

Onbaşlı²,

Yeşilyurt³

et al. 2012

Opt. Express

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“…1,2 Proven techniques for building quality Si/Ge heterojunctions ͑HJs͒ include multistep annealing to relax the Ge layer, 3 two-dimensional ͑2D͒ growth ͑i.e., thin films͒ using Si 1−x Ge x alloy transition layers with graded Ge composition x, 1,2,4 and three-dimensional ͑3D͒ growth in the form of SiGe clusters using the Stranski-Krastanov growth mode. 1,2,5 Another interesting possibility is to use onedimensional growth in the form of nanowires ͑NWs͒ produced by vapor-liquid-solid ͑VLS͒ growth or similar techniques.…”

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confidence: 99%

Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions

Chang

Tsybeskov

Sharma

et al. 2009

Applied Physics Letters

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1063/1.3240595Applied physics letters, 95, 13, 2009 Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions In crystalline, dislocation-free, Si/Ge nanowire axial heterojunctions grown using the vapor-liquid-solid technique, photoluminescence and Raman spectroscopy reveal a SiGe alloy transition layer with preferential chemical composition and strain. In addition to the lattice mismatch, strain in Si/Ge nanowires is observed from a temperature dependent study to be affected by the difference in Si and Ge thermal expansion. The conclusions are supported by analytical transmission electron microscopy measurements.

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“…In absorption enhancement calculations, optical coefficients of strained Germanium [6] grown on Silicon and Au [7] is used for real and imaginary refractive indices of Germanium and Gold material, respectively. Absorption enhancement for metallic structures with structural parameters (d, P, t) in Fig.…”

Section: (B) and 2(d) (Allowing Hsps) And 2(c) And 2(e) (Suppressing mentioning

confidence: 99%

Plasmonic Nanoslit Enhanced Metal-Semiconductor-Metal Photodetectors

Eryilmaz

Okyay

2011

Frontiers in Optics 2011/Laser Science XXVII

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Abstract:We computationally show that metallic nanoslitsintegrated on Germanium metalsemiconductor-metal photodetectors show absorption enhancement up to 8 for TM-polarization in the communications C-band due to interference of horizontal surface plasmons.OCIS codes: 040.5160; 130.0250; 250.5403 Semiconductor industry has continuously scaled down electronic devices, significantly improving device level performance; but the same is not true for the on-chip electrical interconnections. The high frequency nature of photonics make optical interconnects a natural candidate for high capacity information transfer medium, resulting in an avalanching interest in demonstrating efficient Ge-based optical detection closely integrated with Silicon and Silicon based waveguide technologies to realize integrated optoelectronics [1][2][3].It is desirable that the finger spacing and active layer thickness in metal-semiconductor-metal (MSM) photodetectors be reduced for high-speed operation while maintaining the efficiency of the device. Despite earlier reports in the literature on electromagnetic resonance modes in MSM structures [4,5], a complete study does not exist and there is a need for a thorough investigation of plasmonic gratings integrated with MSM photodetectors.For a proof-of-concept demonstration in the near infrared (NIR) photodetectors, we computationally studied Germanium based MSM photodetectors integrated with gold gratings as shown in Fig. 1. We computed the field

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High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si

Cited by 70 publications

References 10 publications

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions

Plasmonic Nanoslit Enhanced Metal-Semiconductor-Metal Photodetectors

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