High efficiency n-type PERT and PERL solar cells

Benick, Jan; Steinhauser, Bernd; Müller, Ralph; Bartsch, Jonas; Kamp, Mathias; Mondon, A.; Richter, Armin; Hermle, Martin; Glunz, Stefan W.

doi:10.1109/pvsc.2014.6924895

Cited by 25 publications

(26 citation statements)

References 7 publications

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“…5) The high efficiency up to 23.2% of the n-type with surface boron and rear phosphorus implantation is reported. 6) However, the implantation method has two issues. One is high equipment cost and low throughput problem to use in the solar cell manufacturing.…”

Section: Introductionmentioning

confidence: 99%

Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

Kurachi¹,

Yoshioka

2015

Jpn. J. Appl. Phys.

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An analytical boron diffusivity model in silicon for thermal diffusion from a boron silicate glass (BSG) film has been proposed in terms of enhanced diffusion due to boron-silicon interstitial pair formation. The silicon interstitial generation is considered to be a result of the silicon kick-out mechanism by the diffused boron at the surface. The additional silicon interstitial generation in the bulk silicon is considered to be the dissociation of the diffused pairs. The former one causes the surface boron concentration dependent diffusion. The latter one causes the local boron concentration dependent diffusion. The calculated boron profiles based on the diffusivity model are confirmed to agree with the actual diffusion profiles measured by secondary ion mass spectroscopy (SIMS) for a wide range of the BSG boron concentration. This analytical diffusivity model is a helpful tool for p+ boron diffusion process optimization of n-type solar cell manufacturing.

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Section: Introductionmentioning

confidence: 99%

Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

Kurachi¹,

Yoshioka

2015

Jpn. J. Appl. Phys.

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“…Benick et al . also reported a 4 cm 2 22.7% fully implanted n‐type PERT solar cell. Finally, Rothhardt et al .…”

Section: Introductionmentioning

confidence: 94%

Process development and comparison of various boron emitter technologies for high-efficiency (~21%) n-type silicon solar cells

Ryu

Cho

Rohatgi

et al. 2016

Prog. Photovolt: Res. Appl.

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This paper shows for the first time a comparison of commercial-ready n-type passivated emitter , rear totally diffused solar cells with boron (B) emitters formed by spin-on coating, screen printing, ion implantation, and atmospheric pressure chemical vapor deposition. All the B emitter technologies show nearly same efficiency of~20%. The optimum front grid design (5 busbars and 100 gridlines), calculated by an analytical modeling, raised the baseline cell efficiency up to 20.5% because of reduced series resistance. Along with the five busbars, rear point contacts formed by laser ablation of dielectric and physical vapor deposition Al metallization resulted in another 0.4% improvement in efficiency. As a result, 20.9% efficient ntype passivated emitter, rear totally diffused cell was achieved in this paper.

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“…2) Typical examples of p-and ntype bifacial solar cell structures include passivated emitter, rear totally diffused (PERT), [3][4][5] bifacial passivated-emitter rear cell (PERC+), 6) and passivated emitter, rear locally diffused (PERL) solar cell on p-type, 7) and n-type crystalline silicon, 8,9) among others. Apart from the above-mentioned bifacial solar cell structures, Fukushima Renewable Energy Research Center (FREA) is working on a simple-to-fabricate and industry-friendly n-type bifacial solar cell with the structure as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Screen-printed contacts with H-patterned n-type passivated emitter rear totally diffused solar cell and front-side boron selective emitter formed by wet chemical etching

Simayi¹,

Kida²,

Utsunomiya³

et al. 2018

Jpn. J. Appl. Phys.

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This paper presents the efficiency distribution of an n-type bifacial solar cell. In this work, the solar cells were produced by our standard cell fabrication process, which is very similar to the industrial line process. The best cell efficiency was 20.4%, and the average efficiency was 20.06%. The cell efficiency ranged between 19.9 and 20.4% and showed a narrow efficiency distribution. This paper also presents the development of a boron selective emitter (p + /p ++ ) n-type bifacial solar cell. In this work, the cells were fabricated using the standard cell fabrication process based on tube-furnace thermal diffusion employing liquid sources: BBr 3 for the front-side boron emitter and POCl 3 for the rear-side phosphorus backsurface field (BSF). The p + /p ++ structure was formed by screen-printing resist masking and wet chemical etching technology. Both the front-and rear-side electrodes were obtained by using screen-printed contacts with H-patterns. The cell efficiency with the selective boron emitter was almost the same as that with the homogeneous emitter; however, the V oc of the selective emitter solar cell was higher than that of the homogeneous emitter solar cell by 4.4 mV. Finally, we performed the recombination analysis of the completed cell.

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High efficiency n-type PERT and PERL solar cells

Cited by 25 publications

References 7 publications

Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

Process development and comparison of various boron emitter technologies for high-efficiency (~21%) n-type silicon solar cells

Screen-printed contacts with H-patterned n-type passivated emitter rear totally diffused solar cell and front-side boron selective emitter formed by wet chemical etching

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