High-efficiency n-type silicon PERT bifacial solar cells with selective emitters and poly-Si based passivating contacts

Application of Phosphorus‐Doped Polysilicon‐Based Full‐Area Passivating Contact on the Front Textured Surface of p‐Type Silicon

“…[ 17 ] We have also done some meaningful work on adopting TOPCon to passivated emitter and rear totally diffused (PERT) bifacial c‐Si solar cells for high passivation. [ 18 ] Nevertheless, most of the achievements related to TOPCon are made from n ‐type c‐Si substrate with the stack structure usually used for BSF. The present PV industry reality is that the production capacity of n ‐type c‐Si solar cells is less than 5 GWp, [ 19 ] far lower than that of PERC solar cells (>100 GWp) based on p ‐type c‐Si substrate.…”

“…Simulation by Wafer Ray Tracer and AFORS‐HET v2.5 : To further understand the influence of front texturing structure and covering films on the reflection and absorption characteristics of incident photons, we used the silicon solar cell numerical software Wafer Ray Tracer (Version 1.64) [ 27 ] to perform the detailed reflection loss due to random or regular small size‐textured surface based on the recombination models of radiative, Shockley–Read–Hall, Auger, and surface recombination through combining Monte Carlo ray tracing with thin‐film optics. Another numerical simulation tool of AFORS‐HET v2.5 [ 18,28 ] developed by Helmholtz‐Zentrum Berlin is suited to deal with ultrathin dielectric layers of, e.g., SiO 2 and a‐Si:H featuring two carrier transportation mechanisms of the thermionic‐emission and thermionic field model and the heterointerface quantum tunneling model. The SiN x :H/poly‐Si( n + + ) stacks were modeled as MS‐Schottky contacts, together with flat band of metal work function being set in the back contact boundary.…”

“…SiO 2 layer can be further optimized such as reducing the density of interface state, adjusting oxygen content to increase the energy gap, and optimizing the film thickness and compactness to enhance the field effect and chemical passivation. [ 18,40 ] Improvement of cell efficiency to 22.2% is calculated due to the decrease of J 0e.pass from 75 to 8 fA cm −2 . Furthermore, using local boron doping, better back electrode paste, less front electrode shading, and better substrate material such as increase in resistivity and bulk lifetime, [ 40 ] the optimized solar cell can be realized with the efficiency increased to 23.4% based on the decrease of J 0.total from 118 to 33 fA cm −2 .…”

Effect of the Properties of Chalcopyrite Semiconductors on the Physical and Optical Parameters of Cell Layers with CIGS

“…Other interesting works on GICS devices may be found in the literature (Sobayel et al [20], Li et al [21], Farooq et al [22], Sharbati et al [23], Bouchama et al [24], Saifullah et al [25], Mallem et al [26], Ding et al [27], Procel et al [28], Richter et al [29], Tao et al [30], Ok et al [31], Rajani et al [32], Singh et al [33], and Jay et al [34]). They also presented in Table 1.…”

“…This configuration is used for a CIGS solar cell. [20] CIGS cell with LDS layer on top [21] CIGS Cell with vs. effective layers [22] AlxGa1-xAs/CIGS tandem cell [23] Superstrate CIGS cell [24] Completed CIGS cell [25] TMO/Si heterojunction solar cell [26] n-type Si PERT bifacial cell [27] p-type c-Si solar cell [28] n-type silicon solar cell [29] TOP-Con silicon solar cell [30] N-type front junction Si solar cell [31] p-CuBr/n-Si heterojunction cell [32] n-type mc-Si screen-printed cell [33] n-type a-Si:H/c-Si heterojunctions [34]…”