High-Efficiency NPC Multilevel Converter Using Super-Junction MOSFETs

McNeill, Neville; Yuan, Xibo; Anthony, Philip

doi:10.1109/tie.2015.2466553

Cited by 16 publications

(5 citation statements)

References 31 publications

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“…Turn-off transients of a Si IGBT with a Si diode (All-Si), a Si IGBT with a SiC diode (Si-SiC) and a SiC MOSFET (All-SiC) [33]. Fig.7 shows the measured efficiency of a 5kW three-phase two-level SiC MOSFET converter, where both a thermal superposition-based method [34,35] and an analytical converter power loss model with switching energy obtained through double pulse test (DPT) [35] have been used to obtain the efficiency. In comparison, the efficiency of a Si IGBT converter of the same power rating has been plotted using the analytical converter power loss model with switching energy obtained through DPT.…”

Section: Performance Improvement With Sic Power Devicesmentioning

confidence: 99%

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Yuan

Laird

Walder

2021

IEEE Trans. Power Electron.

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116

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Power devices based on wide-bandgap (WBG) material such as silicon-carbide (SiC) can operate at higher switching speeds, higher voltages and higher temperatures compared to those based on silicon (Si) material. This paper highlights some opportunities brought by SiC devices in existing and emerging applications in terms of efficiency and power density improvement. While the opportunities are clear, there are also design challenges that must be met in order to realize their full potential. For example, the fast switching speeds and high dv/dt of SiC devices can cause increased electromagnetic interference (EMI), current overshoot, cross-talk effect and have a negative impact on loads such as motors. This paper presents several potential solutions to tackle the application challenges and to fully exploit the superior characteristics of SiC devices and converters while attenuating their negative side-effects. This paper provides an overview of recent SiC device research and development activities based on academic literature, work carried out by the authors and collaborators as well as input from industry. It aims to provide benchmark results and a timely and useful reference to accelerate the adoption and deployment of SiC devices and converters.

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Section: Performance Improvement With Sic Power Devicesmentioning

confidence: 99%

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Yuan

Laird

Walder

2021

IEEE Trans. Power Electron.

Self Cite

116

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“…This usually allows higher switching frequency f sw and, therefore, multilevel configurations lead to significant improvements in terms of quality of both voltage and current waveforms without giving up the benefit of high efficiency and high-power density. Furthermore, the weight and volume of the converter passive components are likely to be reduced [14][15][16][17], which is very appealing for several applications, where the overall size and weight of the electrical generating system needs to be minimized. Given the high number of benefits, more and more multilevel converter topologies are proposed in the literature [17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

“…Nevertheless, apart from the analytical effort required to find the control law, the continuous trend of increasing the controller performance and memory size along with the reduction in the cost has now reached a point where the increase in the number of power semiconductors is not such a disadvantage. Multilevel converters based on Neutral Point Clamped (NPC) and T-Type topologies have been proposed using Super-junction MOSFETs [17,18]. Here, the peak efficiency is estimated to be above 99%.…”

Section: Introductionmentioning

confidence: 99%

High-Performance 3-Phase 5-Level E-Type Multilevel–Multicell Converters for Microgrids

et al. 2021

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This paper focuses on the analysis and design of two multilevel–multicell converters (MMCs), named 3-phase 5-Level E-Type Multilevel–Multicell Rectifier (3Φ5L E-Type MMR) and 3-phase 5-Level E-Type Multilevel–Multicell Inverter (3Φ5L E-Type MMI) to be used in microgrid applications. The proposed 3-phase E-Type multilevel rectifier and inverter have each phase being accomplished by the combination of two I-Type topologies connected to the T-Type topology. The two cells of each phase of the rectifier and inverter are connected in interleaving using an intercell transformer (ICT) in order to reduce the volume of the output filter. Such an E-Type topology arrangement is expected to allow both the high efficiency and power density required for microgrid applications, as well as being capable of providing good performance in terms of quality of the voltage and current waveforms. The proposed hardware design and control interface are supported by the simulation results performed in Matlab/Simulink. The analysis has been then validated in terms of an experimental campaign performed on the converter prototype, which presented a power density of 8.4 kW/dm3 and a specific power of 3.24 kW/kg. The experimental results showed that the proposed converter can achieve a peak efficiency of 99% using only silicon power semiconductors.

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“…The Multilevel Inverters have low dv/dt, high efficiency, improves the quality of output [2]. The three classical topologies NPC [3,4], FC [5,6], CHB [7,8] are widely using in many applications. For more levels of output, the CHB, NPC, and FC requires more gate driver circuits, semiconductor devices, and facing problems in balancing the capacitor voltages [9].…”

Section: Introductionmentioning

confidence: 99%

An Improved Single Phase Self-balancing Switched Capacitor Based Step-up Nine Level Inverter

Shaik¹,

Mani²,

Mopidevi³

2020

JESA

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The improved single phase switched capacitor based nine level inverter is presented in this article. A low DC input voltage is transformed into AC and boost up to the high output voltage without any Boost converter, inductors, transformers. The self-balancing process is involved in the states of charging and discharging of the capacitors. The presented topology does not have any H-bridge configurations which result in the low Total Standing Voltage (TSV). The Phase Disposition Carrier based PWM (PDCPWM) control technique is applied to the presented nine level inverter. The conduction loss, switching loss, efficiency and capacitor ratings are analyzed mathematically. The comparative analysis of the number of semiconductor switches, Total Standing Voltage, Peak Inverse Voltage between the presented topology and existing topology is explained in detail. Finally, using MATLAB/SIMULINK the proposed nine level inverter is simulated to realize the performance of the presented topology.

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High-Efficiency NPC Multilevel Converter Using Super-Junction MOSFETs

Cited by 16 publications

References 31 publications

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

High-Performance 3-Phase 5-Level E-Type Multilevel–Multicell Converters for Microgrids

An Improved Single Phase Self-balancing Switched Capacitor Based Step-up Nine Level Inverter

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