High-efficiency p–i–n detectors for the visible spectral range based on ZnSTe–ZnTe superlattices

Faschinger, W.; Ehinger, M.; Schallenberg, T.; Korn, Maria Graças A.

doi:10.1063/1.123359

Cited by 6 publications

(4 citation statements)

References 6 publications

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“…17 The layers of the structures under study have different lattice constants: a(ZnSe) = 5.6684Å, a(Zn 0.943 Be 0.057 Se) = 5.6382 A, and a(Zn 0.9 Be 0.05 Mn 0.05 Se) = 5.6592Å. 18,19 Therefore, they deform each other: ZnSe tenses the surface layers of Zn 0.9 Be 0.05 Mn 0.05 Se, and Zn 0.943 Be 0.057 Se compresses them. Thus, the Zn 0.9 Be 0.05 Mn 0.05 Se surface layers that have contact with the ZnSe layer, have a smaller band gap, and have contact with the Zn 0.943 Be 0.057 Se layer have a larger band gap than the strainless one.…”

Section: Discussionmentioning

confidence: 99%

Magnetic-field-induced exchange effects between Mn ions and free carriers in ZnSe quantum wells through the intermediate nonmagnetic barrier studied by photoluminescence

et al. 2011

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Photoluminescence (PL) of 50 nm Zn 0.9 Be 0.05 Mn 0.05 Se/d nm Zn 0.943 Be 0.057 Se/2.5 nm ZnSe/30 nm Zn 0.943 Be 0.057 Se structures is investigated as a function of magnetic field (B) and thickness (d) of an intermediate Zn 0.943 Be 0.057 Se nonmagnetic barrier between the Zn 0.9 Be 0.05 Mn 0.05 Se semimagnetic barrier and the ZnSe quantum well at a temperature of 1.2 K. The rate of the shift of different PL bands of the structures under study is estimated in low and high magnetic fields. The causes of the shift rate increase under a pass from low to high magnetic fields are interpreted. The peculiarities of the effect of the intermediate barrier on the luminescence properties of the structures are presented. It is shown that deformation of adjacent layers by the barrier plays a crucial role in the formation of these properties, especially in forming the Mn complexes in the Zn 0.9 Be 0.05 Mn 0.05 Se layer. The change of the band gap as well as of the donor and acceptor level energies under the effect of biaxial compression of the Zn 0.9 Be 0.05 Mn 0.05 Se layer by the Zn 0.943 Be 0.057 Se are estimated. It is concluded that the Zn 0.943 Be 0.057 Se intermediate barrier also appreciably changes the effect of giant Zeeman splitting of the semimagnetic Zn 0.9 Be 0.05 Mn 0.05 Se barrier energy levels on the movement of the energy levels of the ZnSe quantum well in a magnetic field and on the polarization of the quantum-well exciton emission.

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Section: Discussionmentioning

confidence: 99%

Magnetic-field-induced exchange effects between Mn ions and free carriers in ZnSe quantum wells through the intermediate nonmagnetic barrier studied by photoluminescence

et al. 2011

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“…14) This may be one of the reasons for the difficulty in obtaining p-ZnS. ZnTe (E g ¼ 2:26 eV at RT) is known to possess a higher VBM than ZnS, 15,16) and is naturally a p-type semiconductor, which can be doped with N acceptors up to a high hole concentration of over 1 Â 10 19 cm À3 . 17) Therefore, in order to achieve p-type conduction, incorporation of Te into ZnS for raising the VBM seems to be effective.…”

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confidence: 99%

“…A ZnTe/ZnS heterostructure is believed to have a so-called type-II or staggered band line-up. 15,16) We use the following assumptions: (1) the ZnTe/ZnS valence band (VB) offset is 1.9 eV, 30) (2) the bowing parameter for the ZnSTe band gap is 3.80 eV, 31) and (3) the CBM energy of ZnS 1Àx Te x varies linearly with x; thus, the band gap bowing effect is fully attributed to the variation of the VBM. As a result, we obtain 3.0 eV as the band gap of ZnS 0:85 -Te 0:15 , and 0.77 and 0.06 eV as the valence-and conductionband offsets, respectively, at the ZnS 0:85 Te 0:15 /ZnS interface, meaning a type-II band line-up.…”

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confidence: 99%

ZnS-Based ZnSTe:N/n-ZnS Light-Emitting Diodes

Ichino¹,

Kojima²,

Obata³

et al. 2013

Appl. Phys. Express

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ZnS1-xTex:N/n-ZnS diodes have been fabricated in an attempt to convert ZnS into p-type by Te incorporation and the resulting upward shift of the valence band maximum. The diodes exhibit clear rectification in the current–voltage characteristic and a peak of the electron-beam-induced current at the ZnS1-xTex:N/n-ZnS interface. Furthermore, a ZnS0.85Te0.15:N/n-ZnS diode exhibits blue-green electroluminescence due to self-activated emission in n-ZnS at 290 K under a forward current. These results suggest p-type conduction in ZnS1-xTex:N, and thus the LED operation of a ZnS-based pn-junction.

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“…So far, a large potential of ZnSe-based detectors have been reported by many authors where the p-n and p-i-n junction photodiodes reveal high external quantum efficiencies exceeding 80% (in the blue region) [1][2][3][4][5][6].…”

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confidence: 99%

Blue-Violet Avalanche-Photodiode (APD) and its Ionization Coefficients in II-VI Wide Bandgap Compound Grown by Molecular Beam Epitaxy

Ishikura

Fukunaga

Kubota

et al. 2002

phys. stat. sol. (b)

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We present II-VI wide bandgap semiconductor ZnSe and ZnSSe based blue-violet avalanche photo-diode (APD) operation grown on GaAs substrate by molecular beam epitaxy (MBE). Because of highly improved crystal quality of the active layer, the ZnSSe APD reveals stable and high avalanche gain (G ! 60) in the blue-violet optical region under high field operation condition (E ¼ 1.15 Â 10 6 V/cm) at room temperature (RT). High electric field induced ionization coefficients a (for electrons) and b (for holes) are determined as a function of electric field strength E(V/cm); a(E) ¼ 1.7 Â 10 7 exp (--4.9 Â 10 6 /E) and b(E) ¼ 3.7 Â 10 6 exp (--4.0 Â 10 6 /E).Introduction Recently, very active research and development on the blue-ultraviolet photodetectors using II-VI and III-V wide bandgap semiconductors have been made for new applications of a large capacitive optical storage system, medical instruments, and flame sensing, etc. So far, a large potential of ZnSe-based detectors have been reported by many authors where the p-n and p-i-n junction photodiodes reveal high external quantum efficiencies exceeding 80% (in the blue region) [1][2][3][4][5][6].For applying these photodiodes to practical applications, stable high field operation is required. In this paper, we present a stable high field operation of a new ternary ZnSSe APD device. We performed growth of high quality ZnS x Se 1--x (x ¼ 5-6%) films by precise control of the complete lattice matching to GaAs substrate. The improved ZnSSe APD reveals large avalanche gain (G ! 60) under electric field strength of 1.15 Â 10 6 V/cm.We also present important device parameters, high field induced ionization coefficients of photo-injected carriers (electrons and holes), which are important parameters for the optimum design of the wide bandgap compound-based APD devices.

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High-efficiency p–i–n detectors for the visible spectral range based on ZnSTe–ZnTe superlattices

Abstract: Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range

Cited by 6 publications

References 6 publications

Magnetic-field-induced exchange effects between Mn ions and free carriers in ZnSe quantum wells through the intermediate nonmagnetic barrier studied by photoluminescence

Magnetic-field-induced exchange effects between Mn ions and free carriers in ZnSe quantum wells through the intermediate nonmagnetic barrier studied by photoluminescence

ZnS-Based ZnSTe:N/n-ZnS Light-Emitting Diodes

Blue-Violet Avalanche-Photodiode (APD) and its Ionization Coefficients in II-VI Wide Bandgap Compound Grown by Molecular Beam Epitaxy

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