High-efficiency p-i-n organic light-emitting diodes with long lifetime

Wellmann, Philipp; Hofmann, Michaël; Zeika, Olaf; Werner, Ansgar; Birnstock, Jan; Meerheim, Rico; He, Gufeng; Walzer, Karsten; Pfeiffer, Martin; Leo, Karl

doi:10.1889/1.1927730

Cited by 107 publications

(77 citation statements)

References 17 publications

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“…and assuming an acceleration factor of n 5 1.5 (ref. 25), T 50 for this device at 100 cd m 22 is predicted to be over 100,000 h. The remarkable operational stability of our device, along with its outstanding efficiency, low efficiency roll-off, sub-bandgap turn-on voltage and excellent reproducibility, marks a milestone in the production of QLEDs for practical applications.…”

Section: Research Lettermentioning

confidence: 88%

Solution-processed, high-performance light-emitting diodes based on quantum dots

Dai

Zhang

Jin

et al. 2014

Nature

2,323

2,123

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Solution-processed optoelectronic and electronic devices are attractive owing to the potential for low-cost fabrication of large-area devices and the compatibility with lightweight, flexible plastic substrates. Solution-processed light-emitting diodes (LEDs) using conjugated polymers or quantum dots as emitters have attracted great interest over the past two decades. However, the overall performance of solution-processed LEDs--including their efficiency, efficiency roll-off at high current densities, turn-on voltage and lifetime under operational conditions-remains inferior to that of the best vacuum-deposited organic LEDs. Here we report a solution-processed, multilayer quantum-dot-based LED with excellent performance and reproducibility. It exhibits colour-saturated deep-red emission, sub-bandgap turn-on at 1.7 volts, high external quantum efficiencies of up to 20.5 per cent, low efficiency roll-off (up to 15.1 per cent of the external quantum efficiency at 100 mA cm(-2)), and a long operational lifetime of more than 100,000 hours at 100 cd m(-2), making this device the best-performing solution-processed red LED so far, comparable to state-of-the-art vacuum-deposited organic LEDs. This optoelectronic performance is achieved by inserting an insulating layer between the quantum dot layer and the oxide electron-transport layer to optimize charge balance in the device and preserve the superior emissive properties of the quantum dots. We anticipate that our results will be a starting point for further research, leading to high-performance, all-solution-processed quantum-dot-based LEDs ideal for next-generation display and solid-state lighting technologies.

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Section: Research Lettermentioning

confidence: 88%

Solution-processed, high-performance light-emitting diodes based on quantum dots

Dai

Zhang

Jin

et al. 2014

Nature

2,323

2,123

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“…22 Although a more stable p-doping system with a new dopant having deposition temperature over 150°C had been reported, its structure had not been disclosed. 23 Thus, good p-type dopants for organic electrical doping are still lacking and in great demand.…”

mentioning

confidence: 99%

Organic light-emitting diodes using 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane as p-type dopant

Gao

Cheah

et al. 2009

Applied Physics Letters

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We demonstrate that 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane (F2-HCNQ) can serve as an excellent electrical doping material for hole transport materials with the highest occupied molecular orbital level as high as 5.4 eV, such as N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB). With its relatively strong electron-accepting ability and high thermal stability, F2-HCNQ doped NPB organic light-emitting diode (OLED) showed improved power efficiency with low driving voltage. The tris(8-hydroxyquinoline)aluminum based OLED with F2-HCNQ doped NPB layer and Cs2O doped bathophenanthroline electron transport layer exhibits power efficiency of 3.6 lm/W with driving voltage of 3.2 V at 100 cd/m2.

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“…6.5), e.g., 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane (F2-HCNQ) [65], 1,3,4,5,7,8-hexafluorotetracyanonaphthoquinodimethane (F6-TNAP) [66], and 2,2-(perfluoronaphthalene-2,6-diylidene) dimalononitrile (F6-TCNNQ) [67][68][69]. Because this field is now mainly of commercial interest and most of the improved dopants are proprietary materials [70,71], they are not discussed in detail here.…”

Section: P-and N-type Doping Materialsmentioning

confidence: 99%

Organic Semiconductor Electroluminescent Materials

2015

Lecture Notes in Chemistry

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This chapter reviews the important progress made on small molecule electroluminescent materials used in organic light-emitting diode (OLED). In many cases we describe not only the material structures but also the properties associated with these materials, such as energy level, absorption and photoluminescence (PL) peaks, PL quantum yield, exciton life time, and so on. The performances of related devices are covered as well if they are available.

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High-efficiency p-i-n organic light-emitting diodes with long lifetime

Cited by 107 publications

References 17 publications

Solution-processed, high-performance light-emitting diodes based on quantum dots

Solution-processed, high-performance light-emitting diodes based on quantum dots

Organic light-emitting diodes using 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane as p-type dopant

Organic Semiconductor Electroluminescent Materials

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