High-efficiency perovskite solar cell using cobalt doped nickel oxide hole transport layer fabricated by NIR process

Lee, Pei‐Huan; Li, Bo-Ting; Lee, Chia-Feng; Huang, Zhihao; Huang, Yu‐Ching; Su, Wei‐Fang

doi:10.1016/j.solmat.2019.110352

Cited by 52 publications

(31 citation statements)

References 56 publications

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“…The research works of transition metal doping in NiO x are almost exclusively dominated by the p‐type dopants like Co and Cu. [ 96,97 ] Nevertheless, some other elements such as Fe, Zn, Ag, and Al have also been attempted. [ 98–101 ] Chen et al improved the carrier mobility of NiO x by adding Cu, consequently increasing its conductivity significantly, verified by the conductive AFM (c‐AFM) and I − V analysis ( Figure a‐c).…”

Section: Modification Of Nio X Properties and Nio X /Perovskite Interfacementioning

confidence: 99%

Nickel Oxide for Perovskite Photovoltaic Cells

Park

Chaurasiya

Jeong

et al. 2021

Advanced Photonics Research

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Organic–inorganic perovskite solar cells (PSCs) have shown tremendous progress from 3.8% power conversion efficiency (PCE) in 2003 to 25.2% in 2020 because of their wide range of light absorption, fast charge separation, long carrier diffusion length, and long carrier lifetime. The optoelectronic characteristics of hole transport material (HTM) and electron transport material (ETM) strongly affect photovoltaic (PV) performance and stability of PSCs. Recently, various inorganic HTMs with high efficiency, stability, and cost‐effectiveness have been investigated. Among them, nickel oxide (NiO x ) is one of the most studied inorganic HTMs in terms of device performance and stability because it has high hole mobility, electrical conductivity, transmittance, and energetically favorable band alignment, along with environmental stability. This article overviews the recent progress on NiO x ‐based planar PSCs. The main focus is on the structural, electrical and optical properties of the NiO x thin film, which mainly depends on the synthesis methods and post‐treatments. Firstly, a variety of methods are investigated to fabricate dense, compact and high crystallized NiO x thin film. Moreover, multifarious doping strategies and surface functionalization using organic materials are summarized as approaches to improve their properties for realizing high performance p–i–n planar PSC devices.

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Section: Modification Of Nio X Properties and Nio X /Perovskite Interfacementioning

confidence: 99%

Nickel Oxide for Perovskite Photovoltaic Cells

Park

Chaurasiya

Jeong

et al. 2021

Advanced Photonics Research

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“…Metal ion doping into NiO can improve its electrical conductivity even at lower annealing temperatures. This has been successfully used in sol-gel processed NiO x doped with various metal ions such as Ag [32], Cs [23], Y [33], K [34], Co [35], etc. Even in the combustion reaction, Cu doped NiO x thin film was successfully developed as the HTL in inverted PSCs [24].…”

Section: Introductionmentioning

confidence: 99%

Combustion Processed Nickel Oxide and Zinc Doped Nickel Oxide Thin Films as a Hole Transport Layer for Perovskite Solar Cells

2021

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Combustion processed nickel oxide (NiOx) thin film is considered as an alternative to the sol-gel processed hole transport layer for perovskite solar cells (PSCs). In this paper, NiOx thin film was prepared by the solution–combustion process at 250 °C, a temperature lower than the actual reaction temperature. Furthermore, the properties of the NiOx hole transport layer (HTL) in PSCs were enhanced by the incorporation of zinc (Zn) in NiOx thin films. X-ray diffraction and X-ray photoelectron spectroscopy results revealed that the formation of NiOx was achieved at lower annealing temperature, which confirms the process of the combustion reaction. The electrical conductivity was greatly improved with Zn doping into the NiOx crystal lattice. Better photoluminescence (PL) quenching, and low PL lifetime decay were responsible for better charge separation in 5% Zn doped NiOx, which results in improved device performance of PSCs. The maximum power conversion efficiency of inverted PSCs made with pristine NiOx and 5% Zn-NiOx as the HTL was 13.62% and 14.87%, respectively. Both the devices exhibited better stability than the PEDOT:PSS (control) device in an ambient condition.

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“…Doping is the deliberate act of introducing external elements (in the form of impurities) to an intrinsic semiconductor; such that the electrical, structural, and optical properties of the film can be altered and improved. The 20,107,108,128,[131][132][133][134][135][136][137][138] Dopants can also move the energy bands relatively close to the Fermi energy level. Lee, Noh, Jin, and Jung doped zinc on nickel oxide HTM in a planar perovskite architecture.…”

Section: Doped Nickel Oxide As Htmmentioning

confidence: 99%

“…Increased doping leads to increased conductivity due to the higher concentration of charge carriers. Doping a crystalline semiconductor creates allowed energy states (that correspond to the dopant) within the energy band gap 20,107,108,128,131‐138 . Dopants can also move the energy bands relatively close to the Fermi energy level.…”

Section: Doped Nickel Oxide As Htmmentioning

confidence: 99%