Cyclic voltammetry and chronoamperometry were used to study the deposition process at the initial stage of Cu 2 O electrodeposition on indium tin oxide-coated glass. The current transient data and predicted values were analyzed by the instantaneous and progressive nucleation models under different electrolyte concentrations. The effects of the Cu 2 O nucleation mechanism on microstructure and photoelectric properties of Cu 2 O were investigated by X-ray photoelectron spectroscopy, X-ray diffractometry, scanning electron microscopy, ultraviolet visible spectrophotometry and fluorescence spectrophotometry. The results show that the electrochemical deposition process of Cu 2 O is irreversible and controlled by diffusion, and the diffusion coefficient was calculated to be 2.2 × 10 −6 cm 2 · s −1 . The nucleation mechanism of Cu 2 O is related to the electrolyte concentration. When the concentrations of Cu(AC) 2 were 5 mM and 15 mM, the nucleation processes of Cu 2 O were consistent with the progressive nucleation and instantaneous nucleation models, respectively. Under the instantaneous nucleation mechanism, the prepared Cu 2 O displayed a uniform structure, composed of sword-shaped dendritic crystal. Compared to the progressive nucleation, the purity of the Cu 2 O was higher, the bandgap narrower (2.006 eV), and the photoluminescence intensity higher. The Cu 2 O had a high carrier density (4.9 × 10 22 cm −3 ) and a low charge transfer resistance (127.27 K · cm 2 ). It exhibits superior photoelectric performance. The forbidden bandgap of cuprous oxide (Cu 2 O) is 1.9-2.5 eV. Due to its advantages in abundance, low cost, and nontoxicity, it satisfies the necessary economy and environmental requirements to be a viable material for solar energy conversion. In addition, the position of the conduction band (more negative than −0.7 V vs RHE) provides a large driving force for proton reduction in photoelectric cells. 16 Among these techniques, electrodeposition has the attractive features of low processing temperature and low instrumentation cost, making it the most common method for the fabrication of Cu 2 O thin films.Since the photoelectric conversion efficiency of Cu 2 O can reach 20% in theory, many scholars have explored the possibility of its application in photovoltaic conversion. However, the current highest photoelectric conversion efficiency is only 5.38%, 17,18 due to the high recombination rate of photoproduction electron holes. Due to its electronic structure, the bonding, surface energy, and chemical reactivity of Cu 2 O have a direct relationship with its surface morphology and grain sizes. 19,20 Controlling the Cu 2 O surface morphology and particle sizes allows one to decrease the Cu 2 O photoproduction electron-hole recombination rate and thus improve its photoelectric properties. In the electrochemical deposition process, the deposition potential, 21 solution composition, 22,23 and pH 24 influence the surface morphology and particle sizes of Cu 2 O. Many researchers have focused on varying the electroch...