High-efficiency photoelectrochemical electrodes based on ZnIn2S4 sensitized ZnO nanotube arrays

Han, Jianhua; Liu, Zhifeng; Guo, Keying; Wang, Bo; Zhang, Xueqi; Hong, Tiantian

doi:10.1016/j.apcatb.2014.07.040

Cited by 133 publications

(52 citation statements)

References 45 publications

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“…ZnO nanostructures with various geometrical morphologies have been developed using various synthetic methods, such as chemical vapor deposition [9], the hydrothermal method [10], pulsed laser deposition [11], and furnace and electrochemical deposition [12][13]. Various 1-D ZnO nanostructures, such as nanopins [14], nanorods [15], nanotubes and nanowires [16][17], as well as 2-D ZnO nanosheets [18], nanodiscs and nanoplates [19][20], have been fabricated.…”

Section: Introductionmentioning

confidence: 99%

Field emission properties of ZnO nanosheets grown on a Si substrate

Young

Lai

2015

Microelectronic Engineering

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Section: Introductionmentioning

confidence: 99%

Field emission properties of ZnO nanosheets grown on a Si substrate

Young

Lai

2015

Microelectronic Engineering

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“…9,10 Among these approaches, the hydrothermal method and aqueous solution methods are the least expensive and the simplest for synthesizing ZnO nanostructures. The various morphologies of ZnO 1D nanostructures include nanopins, 11 nanorods (NRs), 12 nanotubes, 13 and nanowires (NWs). 14 In addition, 2D ZnO nanosheets (NSs), 15 nanodiscs, 16 and nanoplates have also been fabricated.…”

mentioning

confidence: 99%

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Young¹,

Yang²,

Lai³

2016

J. Electrochem. Soc.

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In recent decades, ZnO-based nanostructures have attracted considerable attention because of their various possible morphologies, large surface-to-volume ratios, non-toxicity, easy synthesis, low cost, and excellent physical properties for fabricating highperformance electronic, magnetic, and optoelectronic devices. This review article focuses on recent advances in Al-, Ga-, and In-doped ZnO nanostructures, including a brief overview of the hydrothermal method and aqueous solution methods. Among these strategies, ZnO nanostructures synthesized via the hydrothermal method exhibits distinct advantages, such as low growth temperature, low cost, and large resultant surface area, as well as applicability in fabricating field emission (FE) devices and photosensors. FE devices have gained widespread attention for their applications in flat-panel displays and other electronic devices, such as microwave amplifiers, X-ray tubes, cathode-ray tube monitors, and electron microscopes. FE devices are influenced by interrelated factors, including emitter geometry, crystal structure, conductivity, work function, spatial distribution of emitting centers, and nanostructure density of nanorods. An applied electric field bends the surface barrier to form a triangular barrier, and the excited electrons tunnel easily to generate the emission current. A large number of excited electrons are stored at the tips of nanowires, thereby causing subsequent point discharge that reduces the electric field. ZnO-based ultraviolet (UV) photosensors are frequently used in environmental monitoring, securing space-to-space communication, flame sensing, and chemical biological analysis. ZnO UV photosensors are used to manufacture various structures, such as p-n heterojunction photodiodes, metal-semiconductor-metal photosensors, and Schottky photodiodes. The resistance of pure n-type ZnO nanostructure is high. ZnO nanostructures are commonly doped with other elements. To improve the electrical properties of ZnO nanostructures, donor dopants for ZnO, such as group III elements (Al, Ga, and In), can be used. The optical and electrical properties of fabricated ZnO optoelectronic devices can also be improved by doping with group III elements. Furthermore, as a material with a direct bandgap (3.37 eV), ZnO can easily absorb wavelengths in the UV range. Thus, illumination under UV can enhance the FE capacity of ZnO nanowires. Methods that enhance the performance of field emitters and photosensors are introduced in this review paper. We hope that this review paper can provide a useful reference to those who are interested in ZnO-based field emission devices and photosensors. ZnO-based nanostructures comprise a highly promising key group of II-VI semiconductor materials. ZnO-based nanostructures have numerous advantages, including a wide bandgap of 3.37 eV, a direct bandgap structure at room temperature, a large exciton binding energy of approximately 60 meV, thermal stability at room temperature (significantly higher than that of GaN), non-toxicity, manufactu...

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“…In case of the XRD pattern of ZnIn 2 S 4 /TiO 2 /FTO, the diffraction peaks (i.e. Z(006) and Z(102)) other than FTO and TiO 2 (JCPDS#21-1272) are attributed to the hexagonal phase of ZnIn 2 S 4 space group: P 63 mc , a = b = 3.85(2) Å, c = 24.68(4) Å, JCPDS 72-0773) [19], [20]. The XRD pattern of CdS/TiO 2 /FTO indicates the peaks at 2 θ = 26.5 and 44.5 corresponded to the diffractions of the (002) and (110) plane of hexagonal wurtzite phase of CdS (JCPDS 89-2944) and are termed as C(002), C(110).…”

Section: Characterization Of Ni(oh)2/cds/znin2s4/tio2 Photoanodesmentioning

confidence: 99%

Data on the effect of improved TiO2/FTO interface and Ni(OH)2 cocatalyst on the photoelectrochemical performances and stability of CdS cased ZnIn2S4/TiO2 heterojunction

et al. 2018

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This data article presents the experimental evidences of the effect of TiO2-fluorine doped tin oxide interface annealing and Ni(OH)2 cocatalysts on the photoelectrochemical, structural, morphological and optical properties of Ni(OH)2/CdS/ZnIn2S4/TiO2 heterojunction. The Raman spectroscopy exhibits the sharp features of the rutile phase of TiO2 and in agreement with the X-ray diffraction data. The band gap energy of the 500 °C sample was found to be 3.12 eV, further it was increased to 3.20, 3.22 eV for samples annealed at 600 and 700 °C respectively. The decrease in the band gap energy at 500 °C related to the oxygen vacancies and was analysed by photoluminescence spectroscopy analysis. The synthesis, characterization methods and other experimental details of TiO2 based heterostructure are also provided. The presence of CdS and ZnIn2S4 coating on surface of TiO2 electrodes providing a high surface area, extended visible absorption and helps to improve the change separation. This data article contains data related to the research article entitled “Highly efficient and stable 3D Ni(OH)2/CdS/ZnIn2S4/TiO2 heterojunction under solar light: Effect of an improved TiO2/FTO interface and cocatalyst” (Mahadik et al., 2017) [1].

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High-efficiency photoelectrochemical electrodes based on ZnIn2S4 sensitized ZnO nanotube arrays

Cited by 133 publications

References 45 publications

Field emission properties of ZnO nanosheets grown on a Si substrate

Field emission properties of ZnO nanosheets grown on a Si substrate

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Data on the effect of improved TiO2/FTO interface and Ni(OH)2 cocatalyst on the photoelectrochemical performances and stability of CdS cased ZnIn2S4/TiO2 heterojunction

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