High efficiency polishing of silicon carbide by applying reactive non-aqueous fluids to fixed abrasive pads

Wang, Hanqiang; Niu, Fengli; Chen, Jiapeng; Jiang, Zhenlin; Wang, Wenjun; Bu, Zhengzheng; Wang, Xuehan; Li, Jun; Zhu, Yongwei; Sun, Tao

doi:10.1016/j.ceramint.2021.11.288

Cited by 23 publications

(5 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…According to our previous experimental results [26], it was necessary to research the significance levels and synergistic effects of the factors explored. Three factors and three levels of tests were designed by using the method of orthogonal testing.…”

Section: Optimization Of Nonaqueous Polishing Slurrymentioning

confidence: 99%

“…With decades of efforts, researchers on raising the MRR of aqueous-based 4H-SiC polishing systems have run out of resources and are currently confronting formidable obstacles. A high-efficiency polishing of 4H-SiC wafers of the Si face method by applying reactive nonaqueous fluids to self-sharpening fixed abrasive pads has been proposed in our former research works [26]. In this work, to increase the material removal rate (MRR) and reduce the surface roughness Sa value of 4H-SiC substrates of the Si face, the effect of organic acid, H 2 O 2 , and Triton X-100 in nonaqueous slurry on 4H-SiC polishing was investigated.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad

et al. 2023

Self Cite

View full text Add to dashboard Cite

4H-SiC wafers are more likely to sustain a lower material removal rate (MRR) and severe subsurface damage in conventional chemical mechanical polishing (CMP) methods. To overcome the material removal bottleneck imposed by aqueous chemistry, a high-efficiency polishing of 4H-SiC wafers method by applying reactive nonaqueous fluids to self-sharpening fixed abrasive pads has been proposed in our former research works. Furthermore, to improve the material removal rate and reduce the surface roughness Sa value of 4H-SiC substrates of the Si face, the effect of organic acid, H2O2, and Triton X-100 in nonaqueous slurry on 4H-SiC polishing was investigated. The MRR of 12.83 μm/h and the Sa of 1.45 nm can be obtained by the orthogonally optimized slurry consisting of 3 wt% H2O2, 0.5 wt% Triton X-100 at pH = 3. It is also found that the addition of different levels of oxidant H2O2 and surfactant Triton X-100 components not only increased the MRR of the 4H-SiC substrates of the Si face but also achieved a lower Sa value; in that, the polishing efficiency of the Si side of the 4H-SiC wafers and the surface quality of the 4H-SiC wafers could be effectively improved by the optimization of the polishing slurry.

show abstract

Section: Optimization Of Nonaqueous Polishing Slurrymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad

et al. 2023

Self Cite

View full text Add to dashboard Cite

show abstract

“…Compared to the commonly used liquid abrasive slurry, the fixed abrasive CMP technique provides higher mechanical force for higher MRR. In 2022, Wang et al investigated non-aqueous slurries based on various types of organic solvents, such as methanol, ethanol, ethylene glycol and glycerol, with an abrasive pad fixed with self-sharpening and agglomerated diamonds (particle size: 3 µm to 5 µm) [ 17 ]. Under the conditions of polishing pressure = 0.7 psi and rotation speed = 50 rpm, the ethanol test group shows the highest MRR equal to 14.38 µm h −1 .…”

Section: Various Sic Cmp Technologiesmentioning

confidence: 99%

“…Under the conditions of polishing pressure = 0.7 psi and rotation speed = 50 rpm, the ethanol test group shows the highest MRR equal to 14.38 µm h −1 . Meanwhile, the methanol test group shows the lowest surface roughness (Sa) equal to 12.22 nm, which however, is still worse than typical SiC performance [ 17 ]. In 2021, Zhou et al applied molecular dynamics to simulate the surface morphology, subsurface damage and temperature distribution in a fixed abrasive CMP environment [ 18 ].…”

Section: Various Sic Cmp Technologiesmentioning

confidence: 99%

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

et al. 2022

View full text Add to dashboard Cite

Chemical mechanical polishing (CMP) is a well-known technology that can produce surfaces with outstanding global planarization without subsurface damage. A good CMP process for Silicon Carbide (SiC) requires a balanced interaction between SiC surface oxidation and the oxide layer removal. The oxidants in the CMP slurry control the surface oxidation efficiency, while the polishing mechanical force comes from the abrasive particles in the CMP slurry and the pad asperity, which is attributed to the unique pad structure and diamond conditioning. To date, to obtain a high-quality as-CMP SiC wafer, the material removal rate (MRR) of SiC is only a few micrometers per hour, which leads to significantly high operation costs. In comparison, conventional Si CMP has the MRR of a few micrometers per minute. To increase the MRR, improving the oxidation efficiency of SiC is essential. The higher oxidation efficiency enables the higher mechanical forces, leading to a higher MRR with better surface quality. However, the disparity on the Si-face and C-face surfaces of 4H- or 6H-SiC wafers greatly increases the CMP design complexity. On the other hand, integrating hybrid energies into the CMP system has proven to be an effective approach to enhance oxidation efficiency. In this review paper, the SiC wafering steps and their purposes are discussed. A comparison among the three configurations of SiC CMP currently used in the industry is made. Moreover, recent advances in CMP and hybrid CMP technologies, such as Tribo-CMP, electro-CMP (ECMP), Fenton-ECMP, ultrasonic-ECMP, photocatalytic CMP (PCMP), sulfate-PCMP, gas-PCMP and Fenton-PCMP are reviewed, with emphasis on their oxidation behaviors and polishing performance. Finally, we raise the importance of post-CMP cleaning and make a summary of the various SiC CMP technologies discussed in this work.

show abstract

“…As the best global planarization technology, chemical mechanical polishing (CMP) has been widely used in processing various substrate materials, optical crystals, and metals. [4][5][6][7][8][9][10][11][12][13] Through the synergy of chemical etching and mechanical abrasion, an ultra-smooth and defect-free surface can be achieved.…”

mentioning

confidence: 99%

Structure-Performance Relationships of Complexing Agents on the Chemical Mechanical Polishing of 6063 Aluminum Alloy

Xi²,

Jiang³

et al. 2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Aluminum alloy has wide applications in many industries due to its unique properties. Chemical mechanical polishing (CMP) is commonly used to treat aluminum alloy to generate mirror-finish surface. In this study, the effects of pH and H2O2 concentration on the CMP of 6063 aluminum alloy were studied. Better CMP performance was obtained in basic media with 1.0 wt% H2O2. Moreover, complexing agents with different structures and functional groups were evaluated for the CMP of Al-alloy, and their structure-performance relationship was systematically studied. It was found that complexing power, steric hindrance, and electrostatic repulsion of complexing agents were important factors determining material removal rate and surface roughness. The complexing agent with high complexing power can favor the dissolution and Al substrate. The complexing agent with large steric hindrance and high charge density can form a stable boundary layer on the surface of substrate and improve its dispersion ability, thereby improving MRR and surface quality. In addition, the amino functional groups of complexing agents exist in the form of neutral molecules at pH 10, which is inferior to carboxyl complexing agents due to their poor static repulsion. X-ray photoelectron spectroscopy analysis confirmed the anchoring of carboxylate anions on the sample surface.

show abstract

High efficiency polishing of silicon carbide by applying reactive non-aqueous fluids to fixed abrasive pads

Cited by 23 publications

References 40 publications

Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad

Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

Structure-Performance Relationships of Complexing Agents on the Chemical Mechanical Polishing of 6063 Aluminum Alloy

Contact Info

Product

Resources

About