Thermal evaporation of a mixed-source of electron and hole-transport materials at appropriate heating rates, namely, tris-(8-hydroxyquinoline)aluminum(3) (Alq 3) and N,N-diphenyl-N, N-bis(3-methylphenyl)-1, 1-diphenyl-4,4-diamine (TPD) can produce a continuously graded mixed-layer structure (CGM). This enables CGM-OLEDs to be fabricated on ITO-coated glass. Although I-V characteristic of CGM-OLEDs may not be significantly modified by a single mixed layer, as compared to the conventional bi-layer heterojunction (HJ) OLED, the power efficiency from the CGM-OLEDs can be increased by a factor of 3.3. The improvement in CGM-OLEDs can be largely explained by the broadening of its recombination zone. The spatial distributions of Alq 3 and TPD in CGM-layers are obtained by depth-profiling of X-ray Photoelectron Spectroscopy. The optimum layer structure for CGM-OLEDs is discussed qualitatively in term of charge balance and electrode quenching.