High-efficiency TRAPATT operation in X band

Purcell, J.J.; Gordon, Sydney M.; Oxley, C. H.; Wickens, P.R.

doi:10.1049/el:19750179

Cited by 7 publications

(1 citation statement)

References 2 publications

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“…The epitaxial layer is phosphorus doped to a level of about 7 x 1o15 atoms/cm3 and is grown to a thickness of approximately 3.6 microns. The p+n junction is formed by a shallow, 4OKeV, boron ion implantation dose of 5 x 1o14 ions/cm2, which is subsequently driven in approximately 3.3 microns to produce a graded p+n interface (1). For optimum X-band performance, diodes were found to have an effective active layer width of 0.2 -0.4 microns, as estimated by an optical interference method (2,3), and a breakdown voltage of 28-36 Volts.…”

Section: Introductionmentioning

confidence: 99%

High Efficiency X-Band Trapatt Amplifiers and Oscillators

Oxley¹,

Howard²,

Gordon³

et al. 1976

6th European Microwave Conference, 1976

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Silicon p+nx+ TRAPATT diodes have given X-band amplification with added power efficiencies of up to 25% and fundamental X-band oscillation with efficiencies as high as 35%. The diodes are fabricated by an Integral Heat Sink (IHS) technology and the p+n junction is formed by a combination of ion implantation and a drive-in period. Double-sided heat sinking has enabled oscillator performance to be extended to pulse-widths of greater than 5 microseconds, and mean output powers of 1 Watt have been recorded. Coaxial amplifier circuits produced small signal gains of 9dB, and large signal gains of 4dB with 1dB bandwidths of 500 MHz at 9.25 GHz with RF peak powers of over 12 watts. The design and performance of both coaxial and microstrip circuits is discussed.

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Section: Introductionmentioning

confidence: 99%

High Efficiency X-Band Trapatt Amplifiers and Oscillators

Oxley¹,

Howard²,

Gordon³

et al. 1976

6th European Microwave Conference, 1976

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Picosecond (Coherent) Transients in Molecular Mixed Crystals

Hesselink

Wiersma

1978

Picosecond Phenomena

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Double-diode trapatt pulse generator with applications to avalanche-diode research

Cripps

Carrol

1975

Proc. Inst. Electr. Eng. UK

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Improvements in trapatt pulse generators are described. By using two diodes in a push-pull configuration, pulses around 250 ps duration with up to 800 W peak power can be produced with repetition rates around 1 GHz. Measurements of diode breakdown under controlled high-speed voltage pulses from such a generator have been made on X-band trapatt diodes. These measurements show that relaxation-type oscillations can start in resistive circuits and thus support the relaxation oscillation theory for the starting mechanism of trapatt oscillations. They further suggest that high-frequency trapatt devices may have difficulty in operating efficiently at frequencies lower than some particular value determined by the relaxation oscillations.

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High-efficiency TRAPATT operation in X band

Cited by 7 publications

References 2 publications

High Efficiency X-Band Trapatt Amplifiers and Oscillators

High Efficiency X-Band Trapatt Amplifiers and Oscillators

Picosecond (Coherent) Transients in Molecular Mixed Crystals

Double-diode trapatt pulse generator with applications to avalanche-diode research

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