High efficiency, wide dynamic range variable gain and power amplifier MMICs for wideband CDMA handsets

Hau, Gary; Nishimura, T.B.; Iwata, N.

doi:10.1109/7260.905953

Cited by 16 publications

(4 citation statements)

References 5 publications

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“…Compared with an IF PGA, this is a typical critical feature of an RF PGA. Therefore, An RF PGA or VGA should normally be linearized using a predistorter [7]. …”

Section: Measurement Resultsmentioning

confidence: 99%

A 2 GHz CMOS dB-linear programmable-gain amplifier with 51 dB dynamic range

Basaran

Tao

et al. 2005

2005 European Microwave Conference

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-A 2 GHz programmable-gain amplifier (PGA) using 0.12-µm CMOS technology is presented in this paper, which has a 51 dB gain control range with 3 dB gain control steps. The maximum output power of this PGA achieves 9 dBm while the 1-dB compression point is located at 8 dBm. A high linearity denoted by the oIP3 of 22 dBm at the maximum gain has been achieved. A new configuration to digitally implement a dB-linear gain characteristic is demonstrated in this paper, which simultaneously enables an adaptive power consumption.

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“…Compared with an IF PGA, this is a typical critical feature of an RF PGA. Therefore, An RF PGA or VGA should normally be linearized using a predistorter [7]. …”

Section: Measurement Resultsmentioning

confidence: 99%

A 2 GHz CMOS dB-linear programmable-gain amplifier with 51 dB dynamic range

Basaran

Tao

et al. 2005

2005 European Microwave Conference

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“…The attenuator method mainly aims at reducing the gain. An attenuator is connected in series to the input of the PA to reduce the gain [34]. A method of connecting an attenuator between the first stage and the final stage has also been proposed [35], [36].…”

Section: Reduced Power Consumption and Gain At Low Powermentioning

confidence: 99%

Evolution of Power Amplifiers for Mobile Phone Terminals from the 2nd Generation to the 5th Generation

Tanaka

Mukai

Imai

et al. 2022

IEICE Trans. Electron.

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Mobile phone systems continue to evolve from the 2nd generation, which began in the early 1990s, to the 5th generation, which is now in service. Along with this evolution, the power amplifier (PA) is also evolved. The characteristics required for PA are changing with each generation. In this paper, we will give an overview of the evolution of PAs from the 2nd generation mobile phones such as GSM (global system for mobile communications) to the 5th generation mobile phones that is often called NR (new radio), in particular, the circuit system. Specifically, the following five items will be described. (1) Ramp-up and ramp-down power control circuit corresponding to GSM, (2) Self-bias circuit technology for improving linearity that becomes important after W-CDMA (wideband code division multiple access), (3) Power mode switching methods for improving efficiency at low output power, (4) Power combining methods that have become important since LTE (long term evolution), and (5) Backoff efficiency improvement methods represented by ET (envelop tracking) and Doherty PA.

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“…Thus, using this modulator circuit nearly three times improvement of bandwidth in comparison to the bandwidth reported in [21] is achieved by the proposed AM circuit. The designed modulator can also work as demodulator and VGA for other applications [22]. To analyse the analogue performance of the circuit, linearity is an important parameter and analysed by 1 dB compression, third-order intermodulation point (IIP3) study, study of output power and gain with respect to input power.…”

Section: Am Circuit Analogue/rf Performancementioning

confidence: 99%

Section: Am Circuit Analogue/rf Performancementioning

confidence: 99%

Low‐power amplitude modulator for wireless application using underlap double‐gate metal–oxide–semiconductor field‐effect transistor

Mukherjee

Koley

Dutta

et al. 2016

IET Circuits, Devices & Systems

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In this study, a design guideline for a modified low-power wideband on-chip amplitude modulator (AM) based on independently driven double-gate metal-oxide-semiconductor field-effect transistor (IDDGMOS) is proposed. The AM performance is then analysed for three different types of underlap engineered IDDGMOS devices. It is observed that the modulator designed with IDDGMOS presents a higher gain and bandwidth for lower power input signals. For analysing the gain-bandwidth performance of the modulator circuit, a small signal model for the devices is considered. The linearity and noise performance of the modulator circuit for different IDDGMOS structures is analysed by studying the 1 dB compression point and the signal-to-noise ratio. The analysis suggested that the most efficient AM circuit performance is achieved for the symmetric underlap IDDGMOS device. The symmetric underlap IDDGMOS AM circuit yields a gain of 11 dB, a bandwidth of 5.5 GHz and a 47.2% efficiency with a distortion less input signal power range of −60 to −33.5 dB. Moreover, the reduced power loss is about 0.047% of the power loss obtained for the conventional complementary metal-oxide-semiconductor device, whereas the bandwidth of the circuit almost triplicates.

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High efficiency, wide dynamic range variable gain and power amplifier MMICs for wideband CDMA handsets

Cited by 16 publications

References 5 publications

A 2 GHz CMOS dB-linear programmable-gain amplifier with 51 dB dynamic range

A 2 GHz CMOS dB-linear programmable-gain amplifier with 51 dB dynamic range

Evolution of Power Amplifiers for Mobile Phone Terminals from the 2nd Generation to the 5th Generation

Low‐power amplitude modulator for wireless application using underlap double‐gate metal–oxide–semiconductor field‐effect transistor

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