High-Efficiency Zero-Voltage Switching Single-Stage Switching Amplifier With Half-Bridge Active Clamping Circuit

Zhong, Shaomin; Xu, Jianping; Zhou, Xiang

doi:10.1109/tie.2018.2815953

Cited by 14 publications

(8 citation statements)

References 24 publications

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“…Table 3 summarizes the main performance of the proposed PCA compared to the prior art [22,23] and commer-cial devices (Axopatch 200B) [20,24]. The proposed design shows a wider bandwidth and higher capacitance compensation and is the only design that integrates a glass microelectrode series resistance/capacitance compensation circuit and feedback resistor parasitic capacitance compensation.…”

Section: Resultsmentioning

confidence: 99%

“…Operational Amplifier. At low frequencies, the noise consists mainly of the thermal noise of the transistor and 1 /f noise, where the thermal noise is proportional to the temperature and the 1/f noise is opposite to the frequency [20,21]. The cross-conductance of the input differential pair is increased while the cross-conductance of the current mirror transistor is reduced to reduce the thermal noise of the opamp.…”

Section: Series Resistance Compensationmentioning

confidence: 99%

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A 146-dB-Ohm Gain 14-pARMS Noise Patch-Clamp Amplifier for Whole-Cell Ion Current Detection

Pan

2022

Journal of Sensors

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The membrane clamp technique is an important tool to reflect the electrophysiological characteristics of cells by recording the ionic currents of cellular channels. Embedded systems work in systems designed for specific user groups and are used to implement specific functions. The membrane clamp amplifier built with embedded technology has the advantages of miniaturization, specialization, low power consumption, high integration, high resource utilization, and a long life cycle, which can avoid the inconvenience to developers and experimenters due to the update of general-purpose computer software and hardware. In this paper, a patch-clamp amplifier (PCA) based on a transimpedance amplifier (TIA) is proposed, which includes a glass microelectrode series resistance/capacitance compensation circuit and feedback resistor parasitic capacitance compensation. The prototype is designed using 180 nm CMOS technology and occupies an area of 720 μ m × 630 μ m . The prototype achieves a transimpedance gain of 145.6 dB-Ohm, a -3 dB bandwidth greater than 15 kHz, and an input reference noise current of 13.98 pARMS. Experimental results show that the proposed PCA is capable of compensating up to 30 pF of electrode capacitance and up to 10 MΩ for 86% of the series resistance, respectively. In addition, when the feedback resistor parasitic capacitance compensation circuit is enabled, the overshoot phenomenon disappears, overcoming the shortcomings of the conventional diaphragm clamp amplifier current clamp and maintaining the original key performance.

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Section: Resultsmentioning

confidence: 99%

Section: Series Resistance Compensationmentioning

confidence: 99%

A 146-dB-Ohm Gain 14-pARMS Noise Patch-Clamp Amplifier for Whole-Cell Ion Current Detection

Pan

2022

Journal of Sensors

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“…Compared with reference [19], although the efficiency gap is small, it reduces a lot of components, has the characteristics of simple structure and low cost, which can be effectively improved and applied. Compared with reference [20][21] [22],its efficiency has been improved, and there is no complex clamping circuit.…”

Section: Experimental Verificationmentioning

confidence: 99%

An Isolated Single-Stage Four-Quadrant Inverter With Energy Storage Capacitor

Hong

Shen³

et al. 2021

IEEE Access

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In this paper, a single-stage full-bridge inverter with energy storage capacitor is proposed. The high-frequency transformer is used to achieve boosting voltage and electrical isolation. The energy storage capacitor is introduced in the secondary side and the stored energy is fed back into the bus capacitor through the body diode when energy is fed back reversely. Accordingly when energy flows forward, the energy stored in the bus capacitor is released to reach the energy balance of bus capacitor in each power frequency cycle, and thereby achieve the four-quadrant operation of inverter. Thus, problems of energy being fed back into the DC bus directly and increasing complexity of circuit are avoided. When the inverter is connected to the grid, the bus capacitor can be disconnected from the circuit and a single-phase singlestage grid-connected inverter is achieved. The operating principle and control strategy of the topology are analyzed in detail and the feasibility is proved by experiments.

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“…Since the initial value of this stage is approximately the end value of the previous stage, i Lp (0) = I L1 , u Cp (0) = −U dc is brought into (14), and you can obtain:…”

Section: B Analysis Of Each Modelmentioning

confidence: 99%

“…For the full-bridge inverter circuit, the circuit is widely used, but there are some problems, such as complex circuit, high cost, complex drive, low reliability, it is not easy to implement ZVS and so on. For half-bridge LLC resonant circuit, it has been widely used and studied in enterprises and universities [14]. It has many advantages, such as high gain, high efficiency, all switches can achieve soft switching, but the parameter design is relatively complex and the cost is high.…”

Section: Introductionmentioning

confidence: 99%

Research on Single-Switch Wireless Power Transfer System Based on SiC MOSFET

Wang

Liu

et al. 2019

IEEE Access

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The traditional wireless power transfer circuit uses the full-bridge or half-bridge inverter, which has complex circuit and control and low reliability. To solve these problems, a single-switch LC resonant circuit is proposed, which is simple in structure and can realize zero voltage switching (ZVS) without the problem of shoot-through. The circuit parameters and working process are modeled and analyzed. However, due to the influence of resonance, the common Si devices can not meet the demand because of the high blocking voltage of the switch. For this purpose, the circuit characteristics of SiC-based devices are studied, and the differences of driving and temperature characteristics between SiC MOSFET and Si MOSFET are compared. Finally, a single switch wireless power transfer (WPT) platform based on SiC MOSFET is built, which proves that SiC devices have great advantages in the field of WPT.

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High-Efficiency Zero-Voltage Switching Single-Stage Switching Amplifier With Half-Bridge Active Clamping Circuit

Cited by 14 publications

References 24 publications

A 146-dB-Ohm Gain 14-pARMS Noise Patch-Clamp Amplifier for Whole-Cell Ion Current Detection

A 146-dB-Ohm Gain 14-pARMS Noise Patch-Clamp Amplifier for Whole-Cell Ion Current Detection

An Isolated Single-Stage Four-Quadrant Inverter With Energy Storage Capacitor

Research on Single-Switch Wireless Power Transfer System Based on SiC MOSFET

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