High efficient approach to utilize SiC MOSFET potential in power modules

Kasko, I.; Berberich, S.E.; Gross, Michael J.; Beckedahl, Peter; Buetow, Sven

doi:10.23919/ispsd.2017.7988909

Cited by 13 publications

(4 citation statements)

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“…Ключевые Рисунок 11 -Струм досліджуваного двигуна: 1 -система без використання кола скидання енергії; 2 -система з використанням кола скидання енергії Технічна реалізація перетворювача Важливим питанням при створенні мостового імпульсного перетворювача, є вибір напівпровідникових ключів [13]. Існує безліч факторів, які необхідно враховувати при виборі типу ключа, але основних з них усього декілька, це: максимальний струм навантаження, напруга джерела живлення, а також частота комутації ключів [14].…”

Section: в а мельниковunclassified

Design of the Power Transistor Energy Converters for Automated Dc-Drive Systems

Melnykov¹

2021

EES

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Purpose. One of the integral parts of modern mechatronic motion modules, where electric motors provide the conversion of electrical energy into useful mechanical action, are power semiconductor converters. At the current stage of industrial development, the use of energy converters as a part of a fully controlled semiconductor switches opens wide opportunities for the development and implementation of highly efficient resource- and energy-saving devices. Methodology. Two types of converters are widely used in automated DC electric drive systems: controlled thyristor rectifiers and pulse-width DC converters, the principle of operation of which is based on the key mode of operation of the regulating semiconductor, which periodically connects the source voltage to the output circuit. The paper presents a laboratory sample of a power semiconductor DC energy converter, which can ensure reliable motor operation in both motor and braking modes. Results. The presented transistor energy converter consists of two main parts: the first part performs the main role – control, and it includes a control unit, a microcontroller, and a device for displaying current information. The second part is a power module, which includes the necessary power supply modules, control drivers and power transistor switches of the converter. To obtain high quality transients of the electric drive system, the circuit is equipped with additional sensors of current, voltage and speed, which takes part in the formation of the control signal and in the protection systems against overvoltage and current jumps. Practical value. The paper substantiates the parameters of the components and proposes developed technical solutions for the construction of a microprocessor control system for a transistor DC energy converter. It is shown that in order to ensure a constant generator mode in automated electric drive systems, where the primary energy converter is an uncontrolled rectifier, it is expedient to install an energy discharge circuit in the DC link. References 18, figures 14.

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Section: в а мельниковunclassified

Design of the Power Transistor Energy Converters for Automated Dc-Drive Systems

Melnykov¹

2021

EES

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“…While few modules offer Tjmax >175°C today, considerable improvements have been made in inductance, to allow fast switching. shows a recent Semikron development that cuts loop inductance to just 1.4 nH in a 400 A, 1200 V half-bridge [13], allowing very fast switching without excessive voltage overshoots and good current sharing. These packaging innovations are key to unlocking the system-level benefits of SiC (Figures 13 and 14).…”

Section: Packaging For Sicmentioning

confidence: 99%

Status of SiC Products and Technology

Bhalla¹

2018

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

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The benefits of silicon carbide (SiC) devices for use in power electronics are driven by fundamental material benefits of high breakdown field and thermal conductivity, and over 25 years of sustained development in materials and devices has brought adoption to a tipping point. It takes the confluence of many separate developments to drive largescale adoption, which we will examine in this chapter.

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“…The Semikron SKiN technology [28], [29] allows implementation of silver sintering to the source pads and 80% utilization of the source pad area [30]. The use of flexible printed circuit board (flex-PCB) within SKiN technology facilitates the reduction of stray power loop inductance to a low level.…”

Section: Introductionmentioning

confidence: 99%

Substrate Embedded Power Electronics Packaging for Silicon Carbide mosfets

Janabi,

Shillaber,

Ying

et al. 2024

IEEE Trans. Power Electron.

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This paper proposes a new power electronic packaging for discrete dies, namely Standard Cell which consists of a step-etched active metal brazed (AMB) substrate and a flexible printed circuit board (flex-PCB). The standard cell exhibits high thermal conductivity, complete electrical insulation, and low stray inductance, thereby enhancing the performance of SiC MOSFET devices. The standard cell has a stray power loop inductance of less than 1 nH and a gate loop inductance of less than 1.5 nH.The standard cell has a flat body with surface-mounting electrical connections on one side and direct thermal connections on the other. The use of flex-PCB die interconnection enables maximum utilization of source pads while providing a flexible gate-source connection and the converter PCB. This paper presents the design concept of the standard cell and experimentally validates its effectiveness in a converter system.

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High efficient approach to utilize SiC MOSFET potential in power modules

Cited by 13 publications

References 0 publications

Design of the Power Transistor Energy Converters for Automated Dc-Drive Systems

Design of the Power Transistor Energy Converters for Automated Dc-Drive Systems

Status of SiC Products and Technology

Substrate Embedded Power Electronics Packaging for Silicon Carbide mosfets

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