2018
DOI: 10.1007/s10825-018-1167-z
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High electric field stress model of n-channel VDMOSFET based on artificial neural network

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Cited by 2 publications
(1 citation statement)
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“…CdS is an n-type semiconductor that has a direct band gap energy of 2.42 eV. 113 Mehrabian et al used the SILVACO TCAD software 114 to model and simulate the ITO/TiO 2 /CdS/P 3 HT/PCBM/Ag structure for a photovoltaic device. 115 Another example of simulation of a QDSC is presented in ref.…”
Section: Quantum Dot-based Solar Cellsmentioning
confidence: 99%
“…CdS is an n-type semiconductor that has a direct band gap energy of 2.42 eV. 113 Mehrabian et al used the SILVACO TCAD software 114 to model and simulate the ITO/TiO 2 /CdS/P 3 HT/PCBM/Ag structure for a photovoltaic device. 115 Another example of simulation of a QDSC is presented in ref.…”
Section: Quantum Dot-based Solar Cellsmentioning
confidence: 99%