High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding ∼3000 S cm−1

Wei, Max; Sanchela, Anup V.; Feng, Bin; Ikuhara, Yuichi; Cho, Hai Jun; Ohta, Hiromichi

doi:10.1063/1.5128410

Cited by 40 publications

(40 citation statements)

References 33 publications

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“…This material belongs to a family of nonmagnetic alkaline-earth stannates (ASnO 3 ; A = Ca, Sr or Ba), which have gained significant interest in recent years owing, in large part, to their (ultra)wide bandgap and high room-temperature electron mobility. , These characteristics of stannates have paved the way for their use in transparent and high-power electronic applications. Motivated by this, significant progress has been made in synthesizing BaSnO 3 (BSO) and SSO films with atomic layer control using a variety of growth methods. − Although there are no studies of transport in bulk SSO single crystals, several exciting developments have occurred in SSO thin films including the demonstration of oxygen vacancy-induced room-temperature ferromagnetism, , high conductivity, a weak localization and Aronov–Altshuler electron–electron interaction, a large phase coherence length, and several field-effect devices − including those operating at GHz frequencies . As we will show, the insulating transport behavior achievable in this material make it a highly sensitive probe for the subtle thermal effects arising from the substrate.…”

Section: Introductionmentioning

confidence: 99%

Hysteretic Magnetoresistance in a Non-Magnetic SrSnO₃ Film via Thermal Coupling to Dynamic Substrate Behavior

et al. 2021

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Hysteretic magnetoresistance (MR) is often used as a signature of ferromagnetism in conducting oxide films and heterostructures. Here, magnetotransport is investigated in a nonmagnetic La-doped SrSnO3 film. A 12 nm La:SrSnO3/2 nm SrSnO3/GdScO3 (110) film with insulating behavior exhibited a robust hysteresis loop in the MR at T < 5 K accompanied by an anomaly at ∼±3 T at T < 2.5 K. Furthermore, MR with the field in-plane yielded a value exceeding 100% at 1.8 K. Using detailed temperature-, angle- and magnetic field-dependent resistance measurements, we illustrate the origin of hysteresis is not due to magnetism in the film but rather is associated with the magnetocaloric effect of the substrate. Given GdScO3 and similar substrates are commonly used, this work highlights the importance of thermal coupling to processes in the substrates which must be carefully accounted for in the data interpretation for heterostructures utilizing these substrates.

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Section: Introductionmentioning

confidence: 99%

Hysteretic Magnetoresistance in a Non-Magnetic SrSnO₃ Film via Thermal Coupling to Dynamic Substrate Behavior

et al. 2021

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“…[14][15] When a smaller Sr atom is substituted in the A-site, SrSnO3 shows Eg of ~4.6 eV, allowing SrSnO3-based TFT to transmit DUV light with a wavelength of 260 nm by more than 50%, which exhibit great potential in DNA-sensing in biology. 16 ASnO3 has perovskite structure composed of corner-sharing SnO6 octahedra.…”

Section: Introductionmentioning

confidence: 99%

Tuning of the Optoelectronic Properties for Transparent Oxide Semiconductor ASnO₃ by Modulating the Size of A-Ions

Wei

Cho

Ohta

2020

ACS Appl. Electron. Mater.

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Recently, La-doped ASnO3 (A = Ba, Sr, and Ca) films have been attracted increasing attention as the active channel of deep-ultraviolet (DUV) transparent thin-film transistors (TFTs), owing to their wide bandgap and high electrical conductivity. However, the effect of A-site substitution on the optoelectronic properties of ASnO3 has not been clarified in a detailed systematic study. Here we show that the optoelectronic properties of ASnO3 can be tuned systematically by changing the average size of A-site ion. We heteroepitaxially fabricated ASnO3 films on (001) LaAlO3 substrates and measured their optical absorption spectra and electron transport properties. The lattice parameter almost linearly increased from 3.95 to 4.14 Å with increasing ionic radius of the A-site ion from 1.34 (Ca 2+ ) to 1.61 Å (Ba 2+ ), whereas the optical bandgap gradually decreased from ~4.6 to ~3.6 eV with a small positive bowing. With increasing the lattice parameter, the electrical conductivity gradually increased from ~10 0 to ~10 3 S cm −1 due to gradual increases in both the carrier concentration and mobility. The present results are of significant importance for designing ASnO3-based transparent electronic devices.Crystallographic analyses of the La-doped ASnO3 solid solution films. Optical transmission in wavelength of 260 nm and bandgap of the ASnO3 solid solution films.Activation energy of the electrical conductivity for the La-doped ASnO3 solid solution films.

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“…1 On the other hand, if Ba is replaced with Sr (SrSnO3), the effective mass reduces to ~0.2 me while the optical bandgap increases to ~4.6 eV. 6 This bandgap can sufficiently transmit deep-UV light (> 4.1 eV), which is crucial for DNA sensing. 7 However, despite the smaller m * , the carrier electron mobility of n-type SrSnO3 are significantly lower than those of n-type BaSnO3 6,[8][9][10][11][12] , which is interesting since the conduction bands of both these materials consist of SnO6 octahedra.…”

Section: Introductionmentioning

confidence: 99%

“…The suppression of carrier electron mobility observed from BaSnO3 (μ ~320 cm −2 V −1 s −1 ) → SrSnO3 (μ ~60 cm −2 V −1 s −1 ) 6,12 implies that substituting Sr for Ba greatly reduces the mean free path of electrons in ASnO3. The main scattering mechanism remains unclear but is likely related to the crystallographic transformation from cubic (BaSnO3 13 ) to orthorhombic (SrSnO3 14 ) structure (Fig.…”

Section: Introductionmentioning

confidence: 99%

Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1 − xSrxSnO3 solid solution films

Cho

Sato

Wei

et al. 2020

Journal of Applied Physics

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La-doped ASnO3 (A = Ba, Sr) have great potential as advanced transparent oxide semiconductors due to their large optical bandgap and relatively high electron mobility. The bandgap of Ba1−xSrxSnO3 solid solution increases from 3.2 eV (BaSnO3) to 4.6 eV (SrSnO3) with x. However, the increase in the bandgap is accompanied by reductions in the electrical conductivity. The versatility in the changes in the electrical properties are not trivial, and the property optimization has been challenging. Here we propose a simple metric for quantifying the transport properties of ASnO3. We investigated the electron/thermal transport properties of Ba1−xSrxSnO3 solid solution films and their relationship with the lattice distortion. The results suggest that the all transport properties of Ba1−xSrxSnO3 are dominated by the lattice distortion. This phenomenon is attributed to the distortions in the SnO6 octahedron, which consists the conduction band. I.Rietveld analyses of the powder diffraction patterns of the Ba1−xSrxSnO3 PLD target ceramics. We found that the space group of x ≤ 0.5 is Pm-3m (cubic perovskite) whereas x ≥ 0.7 is Pnma (orthorhombic perovskite) ( Supplementary Fig. S5). The crystal structures drawn from the Rietveld analysis results also demonstrate that the lattice distortion at x = 0.7 is much greater than that at x = 1 (Supplementary Fig. S6). These results would indicate that the lattice distortion is spontaneously introduced due to the stability of orthorhombic symmetry around x ~0.7.Interestingly, the changes observed in the lattice distortion are similar with those observed from the electron and thermal transport properties. In the undoped Ba1−xSrxSnO3 solid solution system, BaSnO3 (x = 0) initially exhibits a near-perfect cubic structure, where the κ is the highest (8 W m −1 K −1 ). The lattice distortion gradually increases until x = 0.7, where the κ exhibits a minimum ( Fig. 3 and 5b). As x increases further, the lattice distortion gradually reduces until x = 1 (SrSnO3). Since the bowing of lattice parameters occurred in the BaSnO3 -SrSnO3 solid solution system like BaTiO3 -SrTiO3 system 21 , the lattice distortion was maximized around x = 0.7, and the cubic structure is not fully recovered, which is consistent with the κ of SrSnO3 being lower than that of BaSnO3. In the case of La-doped Ba1−xSrxSnO3 solid solution films, the lattice distortion has an increasing tendency until x = 0.8 and decrease as it approaches x = 1, which is consistent with all electron transport properties ( Fig. 4 and 5d). However, unlike the lattice distortion, a plateau can be seen in μHall and n from x = 0.2 to 0.4. This plateau implies that the dopant scatterings from the A-site substitution is not significant but not trivial to understand. It seems that ~0.6 % is a critical distortion in SnO6 for the electron transport properties of ASnO3. For example, a sudden drop in μHall and n is observed at x = 0.5 when the lattice distortion reaches ~0.7 %. In addition, an abrupt 9 S. Raghavan, T.

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High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding ∼3000 S cm−1

Cited by 40 publications

References 33 publications

Hysteretic Magnetoresistance in a Non-Magnetic SrSnO₃ Film via Thermal Coupling to Dynamic Substrate Behavior

Hysteretic Magnetoresistance in a Non-Magnetic SrSnO₃ Film via Thermal Coupling to Dynamic Substrate Behavior

Tuning of the Optoelectronic Properties for Transparent Oxide Semiconductor ASnO₃ by Modulating the Size of A-Ions

Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1 − xSrxSnO3 solid solution films

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High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding ∼3000 S cm−1

Cited by 40 publications

References 33 publications

Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior

Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior

Tuning of the Optoelectronic Properties for Transparent Oxide Semiconductor ASnO3 by Modulating the Size of A-Ions

Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1 − xSrxSnO3 solid solution films

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Hysteretic Magnetoresistance in a Non-Magnetic SrSnO₃ Film via Thermal Coupling to Dynamic Substrate Behavior

Hysteretic Magnetoresistance in a Non-Magnetic SrSnO₃ Film via Thermal Coupling to Dynamic Substrate Behavior

Tuning of the Optoelectronic Properties for Transparent Oxide Semiconductor ASnO₃ by Modulating the Size of A-Ions