High electrical conductivity in the epitaxial polar metals LaAuGe and LaPtSb

Du, Dongxue; Lim, Amber; Zhang, C.; Strohbeen, Patrick J.; Shourov, Estiaque H.; Rodolakis, Fanny; McChesney, J. L.; Voyles, Paul M.; Fredrickson, Daniel C.; Kawasaki, Jason K.

doi:10.1063/1.5132339

Cited by 24 publications

(23 citation statements)

References 39 publications

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“…We then anneal the graphene/sapphire samples at 700 °C in ultrahigh vacuum ( P < 2 × 10 −10 Torr) to clean the surface. At this stage, the reflection high-energy electron diffraction (RHEED) pattern shows a bright but diffuse specular reflection compared to bare sapphire 27 , which we attribute to diffuse scattering from the randomly oriented top graphene layer (Fig. 2 c, d).…”

Section: Resultsmentioning

confidence: 87%

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Epitaxy, exfoliation, and strain-induced magnetism in rippled Heusler membranes

Manzo

Zhang

et al. 2021

Nat Commun

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Single-crystalline membranes of functional materials enable the tuning of properties via extreme strain states; however, conventional routes for producing membranes require the use of sacrificial layers and chemical etchants, which can both damage the membrane and limit the ability to make them ultrathin. Here we demonstrate the epitaxial growth of the cubic Heusler compound GdPtSb on graphene-terminated Al2O3 substrates. Despite the presence of the graphene interlayer, the Heusler films have epitaxial registry to the underlying sapphire, as revealed by x-ray diffraction, reflection high energy electron diffraction, and transmission electron microscopy. The weak Van der Waals interactions of graphene enable mechanical exfoliation to yield free-standing GdPtSb membranes, which form ripples when transferred to a flexible polymer handle. Whereas unstrained GdPtSb is antiferromagnetic, measurements on rippled membranes show a spontaneous magnetic moment at room temperature, with a saturation magnetization of 5.2 bohr magneton per Gd. First-principles calculations show that the coupling to homogeneous strain is too small to induce ferromagnetism, suggesting a dominant role for strain gradients. Our membranes provide a novel platform for tuning the magnetic properties of intermetallic compounds via strain (piezomagnetism and magnetostriction) and strain gradients (flexomagnetism).

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Section: Resultsmentioning

confidence: 87%

“…GdPtSb films were grown by molecular beam epitaxy (MBE) on the graphene/Al 2 O 3 at 600 °C, using conditions similar to ref. 27 (“Methods”). The streaky RHEED patterns for GdPtSb indicate growth with the epitaxial registry to the underlying sapphire substrate (Fig.…”

Section: Resultsmentioning

confidence: 99%

Epitaxy, exfoliation, and strain-induced magnetism in rippled Heusler membranes

Manzo

Zhang

et al. 2021

Nat Commun

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“…xCaxTiO3-  , n-doped BaMnO3 39) , n-dope BiAlO3 39) , n-doped LaFeO3/ YFeO3 39) , NdNiO3 40) , LiOsO3 15,41,42) , LiNbO3 43) , MgReO3 41) , TiGaO3 41) Layered perovskites Ca3Ru2O7 44) ; (Sr,Ca)Ru2O6 30) , Bi5Ti5O17 31) ; Cd2Re2O7 25) , BiPbTi2O6 45) , La2Ti2O7 39) , Sr2Nb2O7 39) , Ca3Ti2O7 39) Antiperovskites Strained ACNi3 (A = Mg, Zn, and Cd) 46) , CeSiPt3 47) LiGaGe-type structure LiGaGe 48) , SrHgPb 49) , SrHgSn 49) , CaHgSn 49) , KMgSb0.2Bi0.8 50) , CaAgBi 51) , LiZnBi 52) , LaAuGe 53) , LaPtSb 53) Two-dimensional materials WTe2 19,20) , MoTe2 54) , CrN 55) , CrB2 55) Others group-V elements (P, As, Sb, Bi) 56) , SnP 57) , BeAu 58)…”

Section: Perovskite Oxidesunclassified

“…Since the polarization of hyperferroelectric is resistant to the electrostatic forces provided by depolarization field, one natural question we can ask is whether it can persist under the electrostatic forces provided by itinerant charge carriers. Recently, several hyperferroelectric metals have been proposed, such as in LaPtSb 53) , LaAuGe 53) , SrHgPb 49) , KMgSb0.2Bi0.8 50) , CaAgBi 51) , CrN 55) and CrB2 55) .…”

Section: Hyperferroelectric Metalsmentioning

confidence: 99%

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Review on ferroelectric/polar metals

Zhou

Ariando

2020

Jpn. J. Appl. Phys.

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The possibility of reconciliation between seemingly mutually exclusive properties in one system can not only lead to theoretical breakthroughs but also potential novel applications. The research on the coexistence of two purportedly contra-indicated properties, ferroelectricity/polarity and conductivity, proposed by Anderson and Blount over 50 years ago was recently revitalized by the discovery of the first unambiguous polar metal LiOsO 3 and further fueled by the demonstration of the first switchable ferroelectric metal WTe 2 . In this review, we first discuss the reasons why the coexistence of ferroelectricity/polarity and conductivity have been deemed incompatible, followed by a review on the history of ferroelectric/polar metals. Secondly, we review the important milestones along with the corresponding mechanisms for the ferroelectric/polar metallic phases in these materials.Thirdly, we summarize the design approaches for ferroelectric/polar metals. Finally, we discuss the future prospects and potential applications of ferroelectric/polar metals.

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Polar Perturbations in Functional Oxide Heterostructures

Wang

Lee

et al. 2023

Adv Funct Materials

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Growth and characterization of metal‐oxide thin films foster successful development of oxide‐material‐integrated thin‐film devices represented by metal‐oxide‐semiconductor field‐effect transistors (MOSFET), drawing enormous technological and scientific interest for several decades. In recent years, functional oxide heterostructures have demonstrated remarkable achievements in modern technologies and provided deeper insights into condensed‐matter physics and materials science owing to their versatile tunability and selective amplification of the functionalities. One of the most critical aspects of their physical properties is the polar perturbation stemming from the ionic framework of an oxide. By engineering and exploiting the structural, electrical, magnetic, and optical characteristics through various routes, numerous perceptive studies have clearly shown how polar perturbations advance functionalities or drive exotic physical phenomena in complex oxide heterostructures. In this review, both intrinsic (engraved by thin‐film heteroepitaxy) and extrinsic (reversibly controllable defect‐mediated disorder and polar adsorbates) elements of polar perturbations, highlighting their abilities for the development of highly tunable functional properties are summarized. Scientifically, the recent approaches of polar perturbations render one to consolidate a prospect of atomic‐level manipulation of polar order in epitaxial oxide thin films. Technologically, this review also offers useful guidelines for rational design to heterogeneously integrated oxide‐based multi‐functional devices with high performances.

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High electrical conductivity in the epitaxial polar metals LaAuGe and LaPtSb

Cited by 24 publications

References 39 publications

Epitaxy, exfoliation, and strain-induced magnetism in rippled Heusler membranes

Epitaxy, exfoliation, and strain-induced magnetism in rippled Heusler membranes

Review on ferroelectric/polar metals

Polar Perturbations in Functional Oxide Heterostructures

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