High electromechanical strain and enhanced temperature characteristics in lead-free (Na,Bi)TiO3–BaTiO3 thin films on Si substrates

Tanaka, Yoshiaki; Okada, Shoji; Hashimoto, Kazuya; Takayama, Ryoichi; Harigai, Takakiyo; Adachi, Hideaki; Fujii, Eiji

doi:10.1038/s41598-018-26309-4

Cited by 13 publications

(9 citation statements)

References 58 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…(b) e 31,eff values estimated from the BNT-BT films on the Si and SrTiO 3 substrates as a function of the measurement voltage (peak to peak). (c) e 31,eff values obtained in this study and those reported in previous studies. − ,,− …”

Section: Resultssupporting

confidence: 67%

“…On the contrary, the dense structure of the present film on Si (Figure d) suggests that the large e 31,eff value would be related to the large d 33,f . Figure c compares the e 31,eff values of this study and previous studies on Pb-based perovskite films and Pb-free materials. − ,,− Note that the values in Figure c are obtained by various sample dimensions and methods. The e 31,eff value of the BNT-BT film obtained in this study is the highest among the Pb-free materials and even higher than those of most Pb-based films including Pb(Zr, Ti)O 3 , except for relaxor Pb(Mg, Nb)-PbTiO 3 and Nb-doped Pb(Zr, Ti)O 3 films.…”

Section: Resultsmentioning

confidence: 73%

“…Another Pb-free candidate with a moderate tetragonality is a solid solution of (1 – x )(Bi 0.5 Na 0.5 )TiO 3 - x BaTiO 3 . , This solid solution is a potential Pb-free piezoelectric material with a phase boundary between the rhombohedral and tetragonal phases at x ≈ 0.06. , The rhombohedral phase is found only in the region where the content of BaTiO 3 , x , is very low, while the tetragonal phase is obtained for x > 0.06. Interestingly, tetragonality is ∼1.02 for a broad range of x from 0.15 to 0.6. ,, However, most studies employed (1 – x )(Bi 0.5 Na 0.5 )TiO 3 - x BaTiO 3 -based piezoelectric films with x < 0.15 because of their close composition to the MPB. − Only a few studies utilize films with a moderate value of x from 0.15 to 0.6, intending to exploit the anisotropy of the tetragonal phase and domain switching.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Shiraishi

Hasegawa

Ishihama

et al. 2021

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Strong electromechanical coupling is observed in tetragonal Pb-free 0.7(Bi 0.5 Na 0.5 )-TiO 3 -0.3BaTiO 3 films, which is far from the morphotropic phase boundary, prepared by pulsed laser deposition on a Si substrate. The tensile strain induced during cooling causes in-plane polarization in an oriented film on a Si substrate, while an epitaxial film grown on a SrTiO 3 substrate exhibits out-ofplane polarization. S−E curve analysis reveals that the obtained piezoelectric coefficient for the film on the Si substrate (d 33,f ≈ 275 pm/V) is approximately eight times higher than that for the epitaxial film on the SrTiO 3 substrate (d 33,f ≈ 34 pm/V). In situ X-ray diffraction analysis confirms the occurrence of domain switching under an electric field from in-plane to out-of-plane polarization. An effective piezoelectric stress coefficient, e 31,eff , of ∼19 C/m 2 is obtained from a Si cantilever sample, which is the highest among the reported values for Pb-free piezoelectric films and is comparable to those for Pb-based films. The significant piezoelectric response produced by domain switching in the Pb-free materials with the composition far from the morphotropic phase boundary will expand future applications due to their both outstanding properties and environmental sustainability.

show abstract

Section: Resultssupporting

confidence: 67%

Section: Resultsmentioning

confidence: 73%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Shiraishi

Hasegawa

Ishihama

et al. 2021

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…Figure 1B shows the distribution of the publications in the function of the synthesis process. As represented in Figure 1B, BNT thin films were mainly synthesized by chemical methods such as sol‐gel, CSD, and MOD 6,7 then by physical methods like PLD 8,9 or RF sputtering 10–14 . It is very surprising that sputtering has not been widely used in BNT synthesis, since this method has indeed been very successful for the PZT synthesis.…”

Section: Introductionmentioning

confidence: 99%

Composition control of lead‐free piezoelectric BNT thin ceramic films deposited by ex situ sputtering

2021

View full text Add to dashboard Cite

(Bi0.5Na0.5)TiO3 thin film growth by ex situ sputtering has been investigated and reported in this paper. An original approach, based on the growth process, was used in order to precisely control the film composition, which has never been reported in BNT growth. The bismuth content in the films and so the composition of amorphous sputtered films was controlled by a slight heating of the substrate during the growth (150–240°C). Then, films were crystallized, obviously without any change in composition, by a post‐annealing treatment. More precisely, without substrate heating and using a stoichiometric target, the film presents an excess of Bi but when it is deposited at 200°C the film becomes stoichiometric. It was shown that the sticking coefficient of Bi is particularly sensitive even at low substrate temperatures, whereas Na and Ti sticking coefficients are not impacted. Followed by a post‐annealing in air at 650°C, the composition of the amorphous BNT films deposited at 200°C remains stoichiometric and the film exhibits a high (100) preferred orientation in a pure perovskite phase and a dense microstructure. The evaluation of the electrical properties as a function of the Bi content in the film, adjusted by the deposition temperature, shows a strong impact on the ferroelectric properties where the best performances were obtained with the stoichiometric BNT film deposited at 200°C.

show abstract

“…In terms of environmentally friendly systems, nevertheless, the search for lead-free alternative materials has grown quickly over the last decades 4 – 7 . In particular, (BNT)-based materials have attracted great attention of scientists as a possible alternative to PZT-based piezoceramics 8 – 17 .…”

Section: Introductionmentioning

confidence: 99%

Unveiling the high-temperature dielectric response of $$\text {Bi}_{0.5}\text {Na}_{0.5}\text {TiO}_{3}$$

Diaz

M’Peko

Venet

et al. 2020

Sci Rep

View full text Add to dashboard Cite

Understanding the physics behind changes in dielectric permittivity and mechanical response with temperature and frequency in lead-free ferroic materials is a fundamental key to achieve optimal properties and to guarantee good performance in the technological applications envisaged. In this work, dense $$\text {Bi}_{0.5}\text {Na}_{0.5}\text {TiO}_{3}$$ Bi 0.5 Na 0.5 TiO 3 (BNT) electroceramics were prepared through solid-state reaction of high-grade oxide reagents, followed by sintering at high temperature (1393 K for 3 h). In good agreement with previous reports in the literature, the thermal behaviour of dielectric response from these BNT materials showed the occurrence of a high-temperature diffuse-like permittivity peak, whose origin has been so far controversial. Thermally stimulated depolarization current, impedance and mechanical spectroscopies measurements were here conducted, over a wide range of temperature and frequency, to get a deep insight into the mechanism behind of this event. The approach included considering both as-sintered and reduced BNT samples, from which it is demonstrated that the broad high-temperature dielectric peak originates from interfacial polarization involving oxygen vacancies-related space-charge effects that develop at the grain-to-grain contacts. This mechanism, that contributes to the anomalous behavior observed in the mechanical response at low frequencies, could also be responsible for the presence of ferroelastic domains up to high temperatures.

show abstract

High electromechanical strain and enhanced temperature characteristics in lead-free (Na,Bi)TiO3–BaTiO3 thin films on Si substrates

Cited by 13 publications

References 58 publications

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Composition control of lead‐free piezoelectric BNT thin ceramic films deposited by ex situ sputtering

Unveiling the high-temperature dielectric response of $$\text {Bi}_{0.5}\text {Na}_{0.5}\text {TiO}_{3}$$

Contact Info

Product

Resources

About

High electromechanical strain and enhanced temperature characteristics in lead-free (Na,Bi)TiO3–BaTiO3 thin films on Si substrates

Cited by 13 publications

References 58 publications

Large Piezoelectric Response in Lead-Free (Bi0.5Na0.5)TiO3-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Large Piezoelectric Response in Lead-Free (Bi0.5Na0.5)TiO3-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Composition control of lead‐free piezoelectric BNT thin ceramic films deposited by ex situ sputtering

Unveiling the high-temperature dielectric response of $$\text {Bi}_{0.5}\text {Na}_{0.5}\text {TiO}_{3}$$

Contact Info

Product

Resources

About

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm