2014
DOI: 10.1116/1.4866397
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High electron mobility in InSb epilayers and quantum wells grown with AlSb nucleation on Ge-on-insulator substrates

Abstract: Articles you may be interested inMolecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure

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Cited by 5 publications
(5 citation statements)
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“…Despite the low boiling temperature of water, there is still potential utility in producing thin films of InSb in aqueous electrolytes. Ultrathin films of InSb are highly desirable for magnetoresistive, spintronic, and IR sensors. , Although thin InSb can be prepared through electrochemical atomic layer epitaxy, , the approach advocated here eliminates the need for only using substrates that enable underpotential deposition. Preparing thin InSb films through vapor phase methods is similarly problematic because the large lattice mismatch of InSb with most substrates of interest (e.g., GaAs and Si) results in discrete nuclei rather than films. , In contrast, deposition of conformal thin metal films on these substrates is straightforward through conventional electrodeposition, electroless plating, metal evaporation, and sputtering.…”
Section: Discussionmentioning
confidence: 99%
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“…Despite the low boiling temperature of water, there is still potential utility in producing thin films of InSb in aqueous electrolytes. Ultrathin films of InSb are highly desirable for magnetoresistive, spintronic, and IR sensors. , Although thin InSb can be prepared through electrochemical atomic layer epitaxy, , the approach advocated here eliminates the need for only using substrates that enable underpotential deposition. Preparing thin InSb films through vapor phase methods is similarly problematic because the large lattice mismatch of InSb with most substrates of interest (e.g., GaAs and Si) results in discrete nuclei rather than films. , In contrast, deposition of conformal thin metal films on these substrates is straightforward through conventional electrodeposition, electroless plating, metal evaporation, and sputtering.…”
Section: Discussionmentioning
confidence: 99%
“…Ultrathin films of InSb are highly desirable for magnetoresistive, spintronic, and IR sensors. , Although thin InSb can be prepared through electrochemical atomic layer epitaxy, , the approach advocated here eliminates the need for only using substrates that enable underpotential deposition. Preparing thin InSb films through vapor phase methods is similarly problematic because the large lattice mismatch of InSb with most substrates of interest (e.g., GaAs and Si) results in discrete nuclei rather than films. , In contrast, deposition of conformal thin metal films on these substrates is straightforward through conventional electrodeposition, electroless plating, metal evaporation, and sputtering. We surmise that if a continuous thin film of In were first deposited by an aforementioned process, then controlled electrodeposition of Sb followed by alloying as shown here may enable complete conversion to contiguous, large area films of InSb on any substrate of interest.…”
Section: Discussionmentioning
confidence: 99%
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“…The use of miscut substrates should help eliminate twinning. 25 We note that Cd 3 As 2 diffraction peaks such as 4 4 16, 8 4 8, and 4 8 8 cannot be distinguished due to the similarity of a and c/2 lattice parameters. Therefore, the possibility of additional twinning cannot be eliminated.…”
mentioning
confidence: 99%
“…Thus, the GaAs/Ge system has also been extensively studied [13][14][15][16][17] with the aim of revealing the nature of the growth of a polar semiconductor on a nonpolar semiconductor and these studies used misoriented substrates to result in obtaining good crystalline quality. These studies were applied to lattice constant mismatch system and molecular beam epitaxy (MBE) of InSb on Ge has been studied [18][19][20]. Since InSb exhibited the largest lattice constant among III-V semiconductors, lattice mismatch between InSb and Ge was as large as 14.5%.…”
Section: Introductionmentioning
confidence: 99%