High electron mobility in SiGe/Si
            <i>n</i>
            -MODFET structures on sapphire substrates

Mueller, Carl H.; Croke, E. T.; Alterovitz, Samuel A.

doi:10.1049/el:20030871

Cited by 7 publications

(1 citation statement)

References 7 publications

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“…This is especially true with the introduction of high k dielectric layers as an alternative to traditional silicon dioxide layers. Silicon on sapphire (SOS) technology through either epitaxial technology or ion split technology has been extensively studied (3,4). This technology enables the use of a platform which not only has the benefits of SOI such as reduced parasitic capacitance but also the benefits of sapphire such as high Q inductors, low loss transmission lines and better thermal properties than silicon dioxide.…”

Section: Introductionmentioning

confidence: 99%

Germanium Bonding to AL2O3

et al. 2008

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Germanium has been bonded to both single crystal Al2O3 (sapphire) as well as fine grain Al2O3. A germanium to sapphire bonding energy of 3 J/m2 has been measured after a 200 oC bond anneal. Micro voids formed between the germanium/sapphire interface can be removed by employing an interfacial layer of silicon dioxide on either surface. Patterning the sapphire into a grid pattern prior to bonding creates an escape path for trapped gas or moisture allowing micro void free direct bonding to be achieved. Modifying the surface of the fine grain Al2O3 surface with a polycrystalline silicon deposition and polish creates a surface, having an rms roughness of 1.5nm(measured over a 250µm square area), suitable for bonding. Techniques employed in the germanium sapphire bonding can then be used in the bonding of fine grain Al2O3 to germanium.

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Section: Introductionmentioning

confidence: 99%

Germanium Bonding to AL2O3

et al. 2008

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Germanium on sapphire by wafer bonding

Baine

Gamble

Armstrong

et al. 2008

Solid-State Electronics

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Predicted electrical properties of modulation-doped ZnO-based transparent conducting oxides

Cohen

Barnett

2005

Journal of Applied Physics

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A one-dimensional Poisson/Schrödinger program has been used to predict the effect of layer thicknesses, donor concentration, and band-gap offset on the electrical properties of transparent conducting modulation-doped ZnO∕ZnMgO multilayer structures. Mobilities as high as 145cm2∕Vs were predicted for a structure with an average carrier density of 3.8×1018cm−3 and a resistivity of 1×10−2Ωcm; for a comparable resistivity in monolithic ZnO, the mobility would be lower ∼30cm2∕Vs and the carrier density would be higher, leading to higher optical absorption. However, it was found that the maximum sheet electron density that could be transferred from the doped to the undoped layers was ∼1013cm−2, limiting the lowest calculated resistivity to ∼1.5×10−3Ωcm. The optimal thicknesses to simultaneously achieve high mobility and low resistivity were 2–5nm for both the pure ZnO and ZnMgO:Al layers. For ZnO thicknesses above this range the resistivity steadily increased, and below 2nm the mobility decreased. For ZnMgO:Al thicknesses increased above this range, the mobility rapidly decreased, whereas decreasing below 2nm increased the resistivity. The effect of the pure ZnMgO set-back layer thickness on mobility is discussed and a spacer layer of ∼1.5nm is proposed for ZnO∕ZnMgO multilayers. The effect of ZnO layer thickness on possible intersubband scattering is also discussed.

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High electron mobility in SiGe/Si n -MODFET structures on sapphire substrates

Cited by 7 publications

References 7 publications

Germanium Bonding to AL2O3

Germanium Bonding to AL2O3

Germanium on sapphire by wafer bonding

Predicted electrical properties of modulation-doped ZnO-based transparent conducting oxides

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