High energy Au-implantation into silicon: Radiation damage and microscopical distribution of implanted atoms

Lindner, J.K.N.; Hecking, N.; Kaat, E. te

doi:10.1016/0168-583x(87)90541-6

Cited by 27 publications

(6 citation statements)

References 11 publications

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“…͑iii͒ As supporting evidence, the electronic stopping power was large enough to initiate the atomic transfer induced by the electronic excitation, whose mechanism had been previously confirmed in the case of semiconductor targets. The present results may be consistent with that of Lindner et al 7 which observed Au clustering of 0.5 mm in diameter at 550 K; using slightly higher energy ͑5 MeV͒ and similar amount of fluence (⌽ϭ2ϫ10 17 /cm 2 ).…”

Section: Discussionsupporting

confidence: 93%

“…1͑a͒, the damage region expands up to 2 m in depth and then terminates abruptly and the layer was covered by amorphized silicon. 10 This trend is in agreement with the results of Lindner et al 7,11 The region in the vicinity of R p is well-amorphized as show in Fig. 1͑b͒.…”

Section: Methodssupporting

confidence: 91%

“…The broad pro-file, which gives 0.824 m for the full width at half maximum ͑FWHM͒ needs to be checked by a forthcoming calibration. It should be much less, because FWHMϭ0.6 m was obtained for 5 MeV Au with ⌽ϭ10 17 /cm 2 at 250 K. 7 The XPS analysis showed that the peak shift for Au 4 f electrons not have revealed strong depth dependence. Hence, the change in the bonding situation of Au ions was not so evident.…”

Section: Methodsmentioning

confidence: 97%

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Theoretical analysis of the embedded layer formed by high-energy Au implantation into Si(II)

Nakagawa

Nakano²,

Ogiso³

et al. 2000

Review of Scientific Instruments

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We performed a high-energy and high-fluence ion implantation, expecting to fabricate micromachines. ͑100͒ Si was bombarded by 3.1 MeV Au 2ϩ ion with a fluence of 10 17 /cm 2 at 95 K. Then an embedded layer was extracted after chemical etching ͑30% KOH, at 333 K͒. The stoichiometric change was evaluated by both experiments and simulation using TRIDYN. The experiments showed, although qualitatively, that Au clustering occurred even at a temperature lower than had ever been reported. From a critical ion fluence, which is necessary to extract a material after etching, we estimate a local concentration to be 1.0-1.2 at. %, which caused a physicochemical change by Au doping. A probable model for the clustering is proposed. It is a nonthermal atomic transfer mechanism following the electronic excitation. Here the electronic stopping power just beneath the surface is 140 eV/Å, which is large enough to ionize valence electrons of Si. Also, a wide amorphized region supports an unstable electrostatic field, which should be produced by many odd-number member rings made of host͑Si͒ atoms. Both ionization of Si and the unstable electrostatic field may most likely trigger the Au clustering.

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Section: Discussionsupporting

confidence: 93%

Section: Methodssupporting

confidence: 91%

Section: Methodsmentioning

confidence: 97%

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Theoretical analysis of the embedded layer formed by high-energy Au implantation into Si(II)

Nakagawa

Nakano²,

Ogiso³

et al. 2000

Review of Scientific Instruments

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“…Past investigations of Au-implanted silicon have been suggested about the gold segregation as a result of its expelling from the recrystallized amorphous layer during thermal and ion beam annealing [5]. It has been experimentally shown that the Au solid-solubility [6] and diffusivity [7] in crystalline silicon (c-Si) is lower than that in amorphous silicon (a-Si). In the study of precipitation of implanted atoms, both the segregation and diffusion of gold atoms has been found to play a role: the segregation into a densely defected region where it exceeds the local solubility resulting in precipitation and the diffusion along the dislocations network until a node where again it exceeds the local threshold for precipitation [8].…”

mentioning

confidence: 99%

Ion induced segregation in gold nanostructured thin films on silicon

Ghatak

Satyam

2008

Nuclear Instruments and Methods in Physics Research Section B:

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We report a direct observation of segregation of gold atoms to the near surface regime due to 1.5 MeV Au2+ ion impact on isolated gold nanostructures deposited on silicon. Irradiation at fluences of 6x10^13, 1x10^14 and 5x10^14 ions cm-2 at a high beam flux of 6.3x1012 ions cm-2 s-1 show a maximum transported distance of gold atoms into the silicon substrate to be 60, 45 and 23 nm, respectively. At a lower fluence (6x1013 ions cm-2) transport has been found to be associated with the formation of gold silicide (Au5Si2). At a high fluence value of 5x10^14 ions cm-2, disassociation of gold silicide and out-diffusion lead to segregation of gold to defect - rich surface and interface region.Comment: 10 pages, 2 figure

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“…As the crystalline silicon matrix is being amorphized the gold solid solubility and diffusivity changes. It has been shown that the solid-solubility in crystalline silicon (≈ 10 11 Au atoms cm -3 ) is six orders of magnitude lower than that in amorphous silicon [9,10]. Similarly, the diffusivity of Au in crystalline silicon is lower by many orders of magnitude compared the diffusion in amorphous silicon [10,11].…”

Section: Introductionmentioning

confidence: 99%