2000 IEEE Radiation Effects Data Workshop. Workshop Record. Held in Conjunction With IEEE Nuclear and Space Radiation Effects C
DOI: 10.1109/redw.2000.896283
|View full text |Cite
|
Sign up to set email alerts
|

High energy electron effects on charge injection devices

Abstract: Charge Injection Devices were tested for transient and total damage effects using high-energy electrons. The devices had acceptable image quality after 1 Mrad(Si) and operated during fluxes up to 8x109 eIcm2-s.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(2 citation statements)
references
References 7 publications
0
2
0
Order By: Relevance
“…Nevertheless, extensive CID radiation studies [17][18][19] have been continued. Recently high-energy electron testing of CID22Q has been reported [20]. The goal was to measure transient effects utilizing both 10 and 68 MeV electrons, as well as TID responses with 30 MeV electrons.…”
Section: Cidmentioning
confidence: 99%
See 1 more Smart Citation
“…Nevertheless, extensive CID radiation studies [17][18][19] have been continued. Recently high-energy electron testing of CID22Q has been reported [20]. The goal was to measure transient effects utilizing both 10 and 68 MeV electrons, as well as TID responses with 30 MeV electrons.…”
Section: Cidmentioning
confidence: 99%
“…Each device was operated as a framing camera during the irradiation. Though data showed a significant increase in the dark current and excessive read noise, the device was still able to operate as a video camera after receiving a TID of 1 Mrad (Si) [20]. Figure 3 provides values of the dark current for the CID-based cameras irradiated in a stepped fashion up to 500 krad (Si) and 1Mrad (Si), respectively.…”
Section: Cidmentioning
confidence: 99%