High-Energy Gain Upconversion in Monolayer Tungsten Disulfide Photodetectors

Wang, Qixing; Zhang, Qi; Zhao, Xiaoxu; Zheng, Yu; Wang, Junyong; Luo, Xin; Dan, Jiadong; Zhu, Rui; Liang, Qijie; Zhang, Lei; Wong, Ping Kwan Johnny; He, Xiaoyue; Huang, Yu Li; Wang, Xinyun; Pennycook, Stephen J.; Eda, Goki; Wee, Andrew Thye Shen

doi:10.1021/acs.nanolett.9b02136

Cited by 45 publications

(48 citation statements)

References 42 publications

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“…Considering the sub‐bandgap CW excitation, the relatively large increase in photon energy (370 meV), and bias‐dependent intensity, the observed upconversion cannot be explained by parametric nonlinear processes, [ 30 ] two‐photon absorption, [ 31,32 ] defect‐ [ 33 ] or phonon‐assisted processes, [ 34,35 ] or biexciton annihilation processes. [ 36–38 ] In order to gain insight into this electro‐optic upconversion mechanism, we measured photocurrent ( I ph ) under NIR laser excitation condition.…”

Section: Figurementioning

confidence: 99%

Electro‐Optic Upconversion in van der Waals Heterostructures via Nonequilibrium Photocarrier Tunneling

et al. 2020

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Ultrafast interlayer charge transfer is one of the most distinct features of van der Waals (vdW) heterostructures. Its dynamics competes with carrier thermalization such that the energy of nonthermalized photocarriers may be harnessed by band engineering. In this study, nonthermalized photocarrier energy is harnessed to achieve near‐infrared (NIR) to visible light upconversion in a metal–insulator–semiconductor (MIS) vdW heterostructure tunnel diode consisting of few‐layer graphene (FLG), hexagonal boron nitride (hBN), and monolayer tungsten disulfide (WS2). Photoexcitation of the electrically biased heterostructure with 1.58 eV NIR laser in the linear absorption regime generates emission from the ground exciton state of WS2, which corresponds to upconversion by ≈370 meV. The upconversion is realized by electrically assisted interlayer transfer of nonthermalized photoexcited holes from FLG to WS2, followed by formation and radiative recombination of excitons in WS2. The photocarrier transfer rate can be described by Fowler–Nordheim tunneling mechanism and is electrically tunable by two orders of magnitude by tuning voltage bias applied to the device. This study highlights the prospects for realizing novel electro‐optic upconversion devices by exploiting electrically tunable nonthermalized photocarrier relaxation dynamics in vdW heterostructures.

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Section: Figurementioning

confidence: 99%

Electro‐Optic Upconversion in van der Waals Heterostructures via Nonequilibrium Photocarrier Tunneling

et al. 2020

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“…In addition, the spin-up photocurrents have a larger proportion and a stronger peak in yellow light region, demonstrating its key role in photoelectric sensors. Generally, a gate electrode can be employed to tune the optical response of a phototransistor 54,55 . The applied gate voltages significantly influence the photoelectric performance of the Z-type pin-junction MBT-ML phototransistor.…”

Section: Phototransistors Of Mnbi 2 Te 4 Monolayermentioning

confidence: 99%

Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

Wang

Gong

et al. 2021

npj Comput Mater

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Two-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.

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“…2D‐layered TMDCs and their vdWHs materials have been attracted enormous research interest because of their outstanding response to the light, which promotes the potential applications in next‐generation optoelectronic devices, including photodetectors, 188‐192 photovoltaics, 193 light emitting diodes (LEDs), 194,195 and so on. Herein, we mainly summarize the recent progress of optoelectronic applications in the following three aspects: photodetectors, photovoltaics, and LEDs.…”

Section: Synthesized Tmdcs For Optoelectronicsmentioning

confidence: 99%

“…However, a photodetection technique capable for longer wavelength, higher operating temperature as well as rapid responsivity, is still facing great challenges. Recently, Wang et al 189 fabricated the monolayer WS 2 photodetectors, consisted of a monolayer WS 2 , few layer graphene ribbons, and conducting Ti/Au film (Figure 14A), which can detect photons with energy even lying 219 meV below the bandgap of WS 2 at room temperature. These photodetectors exhibit the highest photoresponsivity of 59 mA W −1 , photoconductive gain of 0.1, and specific detectivity ( D *) of 7.5 × 105 Jones at the excitation wavelength of 680 nm.…”

Section: Synthesized Tmdcs For Optoelectronicsmentioning

confidence: 99%

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Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics

Xiao

Zeng

et al. 2020

InfoMat

124

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Tremendous efforts have been devoted to preparing the ultrathin two‐dimensional (2D) transition‐metal dichalcogenides (TMDCs) and TMDCs‐based heterojunctions owing to their unique properties and great potential applications in next generation electronics and optoelectronics over the past decade. However, to fulfill the demands for practical applications, the batch production of 2D TMDCs with high quality and large area at the mild conditions is still a challenge. This feature article reviews the state‐of‐the‐art research progresses that focus on the preparation and the applications in electronics and optoelectronics of 2D TMDCs and their van der Waals heterojunctions. First, the preparation methods including chemical and physical vapor deposition growth are comprehensively outlined. Then, recent progress on the application of fabricated 2D TMDCs‐based materials is revealed with particular attention to electronic (eg, field effect transistors and logic circuits) and optoelectronic (eg, photodetectors, photovoltaics, and light emitting diodes) devices. Finally, the challenges and future prospects are considered based on the current advance of 2D TMDCs and related heterojunctions.

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High-Energy Gain Upconversion in Monolayer Tungsten Disulfide Photodetectors

Cited by 45 publications

References 42 publications

Electro‐Optic Upconversion in van der Waals Heterostructures via Nonequilibrium Photocarrier Tunneling

Electro‐Optic Upconversion in van der Waals Heterostructures via Nonequilibrium Photocarrier Tunneling

Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics

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