High energy photon induced Fermi-level shift of Ba 0.5 Sr 0.5 TiO 3 thin films

Barala, Surendra Singh; Bhati, Vijendra Singh; Kumar, Mahesh

doi:10.1016/j.tsf.2017.08.041

Cited by 3 publications

(1 citation statement)

References 41 publications

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“…Kumar and co‐workers reported the same phenomenon in their study of Ba 0.5 Sr 0.5 TiO 3 system. [ 32 ] The induced vacancies disrupt the orbital character and cause Fermi level shift toward conduction band. Another explanation is that amorphous Sb 2 O 3 behaves more as an n‐type material than Sb 2 O 5 .…”

Section: Resultsmentioning

confidence: 99%

Low‐Temperature Atomic Layer Deposition of High‐k SbO_x for Thin Film Transistors

Yang

Bahrami

Ding

et al. 2022

Adv Elect Materials

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SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is found to occur using Sb(NMe2)3 and H2O. For the first time, the reaction mechanism and dielectric properties of ALD‐SbOx thin films are systematically studied, which exhibit a high breakdown field of ≈4 MV cm−1 and high areal capacitance ranging from 150 to 200 nF cm−2, corresponding to a dielectric constant ranging from 10 to 13. The ZnO semiconductor layer is integrated into a SbOx dielectric layer, and thin film transistors (TFTs) are successfully fabricated. A TFT with a SbOx dielectric layer deposited at 200 °C from Sb(NMe2)3 and H2O2 presents excellent performance, such as a field effect mobility (µ) of 12.4 cm2 V−1 s−1, Ion/Ioff ratio of 4 × 108, subthreshold swing of 0.22 V dec−1, and a trapping state (Ntrap) of 1.1 × 1012 eV−1 cm−2. The amorphous structure and high areal capacitance of SbOx boosts the interface between the semiconductor and dielectric layer of TFT devices and provide a strong electric field for electrons to improve the device mobility.

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Section: Resultsmentioning

confidence: 99%

Low‐Temperature Atomic Layer Deposition of High‐k SbO_x for Thin Film Transistors

Yang

Bahrami

Ding

et al. 2022

Adv Elect Materials

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show abstract

Specific thermoelectric features of novel CaPd3B4O12 (B = Ti, V) perovskites following DFT calculations

Umer

Irfan

Mahboob

et al. 2018

Physica B: Condensed Matter

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Impact of gamma-ray irradiation on the electronic structures of PCBM and P3HT organic semiconductor films

Park

Choi

Lee

et al. 2021

Polymer Degradation and Stability

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High energy photon induced Fermi-level shift of Ba 0.5 Sr 0.5 TiO 3 thin films

Cited by 3 publications

References 41 publications

Low‐Temperature Atomic Layer Deposition of High‐k SbO_x for Thin Film Transistors

Low‐Temperature Atomic Layer Deposition of High‐k SbO_x for Thin Film Transistors

Specific thermoelectric features of novel CaPd3B4O12 (B = Ti, V) perovskites following DFT calculations

Impact of gamma-ray irradiation on the electronic structures of PCBM and P3HT organic semiconductor films

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High energy photon induced Fermi-level shift of Ba 0.5 Sr 0.5 TiO 3 thin films

Cited by 3 publications

References 41 publications

Low‐Temperature Atomic Layer Deposition of High‐k SbOx for Thin Film Transistors

Low‐Temperature Atomic Layer Deposition of High‐k SbOx for Thin Film Transistors

Specific thermoelectric features of novel CaPd3B4O12 (B = Ti, V) perovskites following DFT calculations

Impact of gamma-ray irradiation on the electronic structures of PCBM and P3HT organic semiconductor films

Contact Info

Product

Resources

About

Low‐Temperature Atomic Layer Deposition of High‐k SbO_x for Thin Film Transistors

Low‐Temperature Atomic Layer Deposition of High‐k SbO_x for Thin Film Transistors