High energy radiation damage on silicon photonic devices: a review

Du, Qingyang

doi:10.1364/ome.476935

Cited by 3 publications

(1 citation statement)

References 35 publications

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“…While the space impact on electronic ICs has been studied for decades, the impact on PICs is a relatively new topic of research and there are still many open questions. 21,22 However, several studies showed promising results in terms of resilience to the space environment. For example, total ionizing dose (TID), which is one of the main radiation effects, does not introduce significant additional losses in InP, 23 Si, 24,25 SiN, 26 a-Si, 26,27 SiC, 28 and SiO 2 29 waveguides.…”

Section: Space Environment Considerationsmentioning

confidence: 99%

Photonic integrated circuits for high-throughput optical communications and ranging satellite links

Ziarko,

Terrasanta,

Bergamasco

et al. 2024

Free-Space Laser Communications XXXVI

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Photonic Integrated Circuits (PICs) are one of the key technologies enabling extremely high-throughput optical communications systems deployed in terrestrial fibre networks. Their inherent benefit is the co-integration and miniaturization of multiple high-speed optical devices such as lasers, photodiodes and modulators on a single chip. Compact photonic solutions have the potential to benefit satellite systems not only in terms of their demonstrated performance, but also through improvements in Size, Weight and Power (SWaP) of a satellite payload.In our approach we propose leveraging mature PIC-based solutions employed in high-speed coherent transceivers delivering 100 Gbps per wavelength using PDM-QPSK modulation format. However, the optical chip design is adapted to expand its functionality with a capability to correlate time-transfer sequences used for satellite ranging applications.The proposed solution is demonstrated with a simplified Indium Phosphide transceiver chip operating in the optical C-band. The required functionality of the current prototype is based on a combination of standard and customized integrated devices. The adaptation of the required photonic components accounts for existing reports on the space environment impact on their performances. The implemented functionalities are tested to prove the concept feasibility and gain better understanding of their performance.

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Section: Space Environment Considerationsmentioning

confidence: 99%

Photonic integrated circuits for high-throughput optical communications and ranging satellite links

Ziarko,

Terrasanta,

Bergamasco

et al. 2024

Free-Space Laser Communications XXXVI

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Radiation damage in GaN/AlGaN and SiC electronic and photonic devices

Pearton

Xia

Ren

et al. 2023

Journal of Vacuum Science &Amp; Technology B

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The wide bandgap semiconductors SiC and GaN are commercialized for power electronics and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials system. For power electronics applications, SiC MOSFETs (metal–oxide–semiconductor field effect transistors) and rectifiers and GaN/AlGaN HEMTs and vertical rectifiers provide more efficient switching at high-power levels than do Si devices and are now being used in electric vehicles and their charging infrastructure. These devices also have applications in more electric aircraft and space missions where high temperatures and extreme environments are involved. In this review, their inherent radiation hardness, defined as the tolerance to total doses, is compared to Si devices. This is higher for the wide bandgap semiconductors, due in part to their larger threshold energies for creating defects (atomic bond strength) and more importantly due to their high rates of defect recombination. However, it is now increasingly recognized that heavy-ion-induced catastrophic single-event burnout in SiC and GaN power devices commonly occurs at voltages ∼50% of the rated values. The onset of ion-induced leakage occurs above critical power dissipation within the epitaxial regions at high linear energy transfer rates and high applied biases. The amount of power dissipated along the ion track determines the extent of the leakage current degradation. The net result is the carriers produced along the ion track undergo impact ionization and thermal runaway. Light-emitting devices do not suffer from this mechanism since they are forward-biased. Strain has also recently been identified as a parameter that affects radiation susceptibility of the wide bandgap devices.

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Photonics for Harsh Environments: introduction to the special issue

Girard

et al. 2023

Opt. Mater. Express

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High energy radiation damage on silicon photonic devices: a review

Cited by 3 publications

References 35 publications

Photonic integrated circuits for high-throughput optical communications and ranging satellite links

Photonic integrated circuits for high-throughput optical communications and ranging satellite links

Radiation damage in GaN/AlGaN and SiC electronic and photonic devices

Photonics for Harsh Environments: introduction to the special issue

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