High energy-storage density of lead-free BiFeO3 doped Na0.5Bi0.5TiO3-BaTiO3 thin film capacitor with good temperature stability

Tang, Zhenhua; Ge, Jason J.; Ni, Hao; Lü, Biao; Tang, Xin‐Gui; Lu, Sheng‐Guo; Tang, Minghua; Gao, J.

doi:10.1016/j.jallcom.2018.05.072

Cited by 87 publications

(45 citation statements)

References 46 publications

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“…It is evident that there is a minimal temperature dependence for W r , while η decreases slightly at high temperatures but still retains values of η >80%. Figure compares the energy density W r and efficiency η at 175°C of the 110‐textured 10BSBT films with those of other materials . It can be observed that the 10BSBT films provide an optimum combination of W r and η at high temperatures and therefore are an attractive option for high‐energy‐storage capacitor applications that are intended for temperatures of 140°C and above.…”

Section: Resultsmentioning

confidence: 97%

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High energy storage efficiency and thermal stability of A‐site‐deficient and 110‐textured BaTiO₃–BiScO₃ thin films

Abbas

Pramanick

2020

J Am Ceram Soc

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The development of thin film dielectrics having both high energy density and energy conversion efficiency, as well as good thermal stability, is necessary for practical application in high‐temperature power electronics. In addition, there is a demand for the development of new Pb‐free high‐energy density dielectric materials due to environmental concerns. In this regard, thin films of weakly coupled relaxors based on solid solutions of BaTiO3–BiMeO3 have shown good promise, because they exhibit a remarkably large polarization over a wide temperature range. Nevertheless, the performance of Pb‐free thin films has lagged behind that of their Pb‐based counterparts in terms of thermal stability and energy conversion efficiency. Toward this end, most recent studies on BaTiO3–BiMeO3 systems have focused on the optimization of material composition, while relatively less attention has been paid to other aspects such as defect chemistry and crystallographic texture. In this study, we examine the effects of A‐site vacancy and crystallographic texture on the energy storage performance of BaTiO3–BiScO3 thin films synthesized using pulsed laser deposition (PLD). It is shown that a high energy storage density (Wr) of ~28.8 J/cm3 and a high efficiency of η >90% are achieved through a combination of moderate A‐site vacancy concentration and (110) crystallographic texture. Furthermore, Wr remains nearly temperature independent while a high efficiency of η >80% is maintained for temperatures up to 200°C, which constitutes one of the best performances for Pb‐free ferroelectric films for high‐temperature capacitor applications.

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Section: Resultsmentioning

confidence: 97%

“…WA and AP gratefully acknowledge funding support from City University of Hong Kong (Projects No. 7200514, F I G U R E 5 Comparison of recoverable energy storage density (W r ) and efficiency (η) of 110-textured 10BSBT films with respect to other Pb-based and Pb-free thin films 2,5,8,[30][31][32][33][34][35][36][37]…”

Section: Acknowledgmentsmentioning

confidence: 99%

High energy storage efficiency and thermal stability of A‐site‐deficient and 110‐textured BaTiO₃–BiScO₃ thin films

Abbas

Pramanick

2020

J Am Ceram Soc

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“…Na 0.5 Bi 0.5 TiO 3 (NBT) is considered as one of the most promising lead‐free materials to replace lead‐based materials due to its excellent dielectric properties . With increasing the temperature, NBT undergoes several electric behaviors such as ferroelectric (FE) (at room temperature), AFE‐like behavior (above 220°C), and RFE behavior (at ~320°C, T c ) . Since NBT exhibits both AFE and RFE characteristics, few chemical substitutions, such as BaTiO 3 (BTO), SrTiO 3 (STO) and (Bi 0.5 K 0.5 )TiO 3 (KBT), were used to form a solid solution with NBT to achieve relaxor behavior, which is hopeful to reduce the polarization hysteresis, and cause the increase in energy density and efficiency .…”

Section: Introductionmentioning

confidence: 99%

“…15,16 With increasing the temperature, NBT undergoes several electric behaviors such as ferroelectric (FE) (at room temperature), AFE-like behavior (above 220°C), and RFE behavior (at ~320°C, T c ). 17 Since NBT exhibits both AFE and RFE characteristics, few chemical substitutions, such as BaTiO 3 (BTO), SrTiO 3 (STO) and (Bi 0.5 K 0.5 )TiO 3 (KBT), were used to form a solid solution with NBT to achieve relaxor behavior, which is hopeful to reduce the polarization hysteresis, and cause the increase in energy density and efficiency. 1,17,18 A high energy storage density has been reported in NBT-based ternary solid solution thin films, such as NBT-KBT-SrZrO 3 thin films (34.69 J cm −3 ) and NBT-BTO-BiFeO 3 thin films (42.9 J cm −3 ).…”

Section: Introductionmentioning

confidence: 99%

“…1,17,18 A high energy storage density has been reported in NBT-based ternary solid solution thin films, such as NBT-KBT-SrZrO 3 thin films (34.69 J cm −3 ) and NBT-BTO-BiFeO 3 thin films (42.9 J cm −3 ). 9,17 However, there are complex components in ternary solid solution films, which are not conducive to large-scale fabrication. SrTiO 3 may prompt NBT-based binary solid solution thin films to be suitable for high energy storage applications via inducing a decreased in coercive field (E c ) and depolarization temperature for NBT, and improving the value of P max -P r , together with the enhancing breakdown strength.…”

Section: Introductionmentioning

confidence: 99%

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High‐recoverable energy‐storage density and dielectric tunability in Eu³⁺‐doped NBT‐xSTO binary solid solution films

Huang

Thatikonda

et al. 2019

J Am Ceram Soc

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The Eu3+‐doped (1 − x)Na0.5Bi0.5TiO3‐xSrTiO3 (Eu‐NBT‐xSTO) thin films were prepared on Pt/Ti/SiO2/Si substrates. Raman analysis reveals that the phase structure may undergo a phase evolution of rhombohedral → rhombohedral + tetragonal (morphotropic phase boundary) → tetragonal with increasing content of STO. The scanning electron microscopy images show that the uniformity and high density of Eu‐NBT‐xSTO films were increased by adding STO, resulting in a pronounced effect on energy storage properties. The ɛ‐T curves confirm that a high phase transition diffuseness of γ = 2.02 ± 0.03 and 1.98 ± 0.03 was achieved in Eu‐NBT‐0.24STO and Eu‐NBT‐0.3STO films, respectively. Furthermore, a large recoverable energy storage density of 31.5 J cm−3 with an efficiency of 64% was obtained in Eu‐NBT‐0.3STO film, which also exhibited good thermal stability in the temperature range between −60°C and 80°C as well as long‐term stability up to 1 × 108 switching cycles. These results suggest that the Eu‐NBT‐xSTO films may be used in the novel and advanced energy storage capacitors.

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High‐Performance Ferroelectric–Dielectric Multilayered Thin Films for Energy Storage Capacitors

Silva

Oliveira

et al. 2018

Adv Funct Materials

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Herein, the effect of the insertion of a thin dielectric HfO2:Al2O3 (HAO) layer at different positions in the Pt/0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 (BCZT)/Au structure on the energy storage performance of the capacitors is investigated. A high storage performance is achieved through the insertion of a HAO layer between BCZT and Au layers. The insertion of the dielectric layer causes a depolarization field which results in a high linearity hysteresis loop with low energy dissipation. The Pt/BCZT/HAO/Au capacitors show an impressive energy storage density of 99.8 J cm−3 and efficiency of 71.0%, at an applied electric field of 750 kV cm−1. Further, no significant change in the energy storage properties is observed after passing 108 switching cycles through the capacitor. The presence of resistive switching (RS) in leakage current characteristics confirms the strong charge coupling between ferroelectric and insulator layers. The same trend of the RS ratio and the energy storage performance with the variation of the architecture of the devices suggests that the energy storage properties can be improved through the charge coupling between the layers. By combining ferroelectrics and dielectrics into one single structure, the proposed strategy provides an efficient way for developing highly efficient energy storage capacitors.

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High energy-storage density of lead-free BiFeO3 doped Na0.5Bi0.5TiO3-BaTiO3 thin film capacitor with good temperature stability

Cited by 87 publications

References 46 publications

High energy storage efficiency and thermal stability of A‐site‐deficient and 110‐textured BaTiO₃–BiScO₃ thin films

High energy storage efficiency and thermal stability of A‐site‐deficient and 110‐textured BaTiO₃–BiScO₃ thin films

High‐recoverable energy‐storage density and dielectric tunability in Eu³⁺‐doped NBT‐xSTO binary solid solution films

High‐Performance Ferroelectric–Dielectric Multilayered Thin Films for Energy Storage Capacitors

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High energy-storage density of lead-free BiFeO3 doped Na0.5Bi0.5TiO3-BaTiO3 thin film capacitor with good temperature stability

Cited by 87 publications

References 46 publications

High energy storage efficiency and thermal stability of A‐site‐deficient and 110‐textured BaTiO3–BiScO3 thin films

High energy storage efficiency and thermal stability of A‐site‐deficient and 110‐textured BaTiO3–BiScO3 thin films

High‐recoverable energy‐storage density and dielectric tunability in Eu3+‐doped NBT‐xSTO binary solid solution films

High‐Performance Ferroelectric–Dielectric Multilayered Thin Films for Energy Storage Capacitors

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High energy storage efficiency and thermal stability of A‐site‐deficient and 110‐textured BaTiO₃–BiScO₃ thin films

High energy storage efficiency and thermal stability of A‐site‐deficient and 110‐textured BaTiO₃–BiScO₃ thin films

High‐recoverable energy‐storage density and dielectric tunability in Eu³⁺‐doped NBT‐xSTO binary solid solution films