High-energy storage performance achieved in PbZrO3 thin films via Li+ doping and low-temperature annealing

Zhang, Changhai; Zhang, Xue; Zhang, Bowen; Yin, Chao; Zhang, Yue; Zhang, Yongquan; Zhang, Tiandong; Cui, Yang; Chi, Qingguo

doi:10.1016/j.tsf.2024.140289

Thin Solid Films

2024

DOI: 10.1016/j.tsf.2024.140289

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High-energy storage performance achieved in PbZrO3 thin films via Li+ doping and low-temperature annealing

Changhai Zhang,

Xue Zhang,

Bowen Zhang

et al.

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PbZrO3-based thin film capacitors with high energy storage efficiency

Son,

Udovenko,

Gaur

et al. 2024

Applied Physics Letters

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Antiferroelectric (Pb0.87Sr0.05Ba0.05La0.02)(Zr0.52Sn0.40Ti0.08)O3 thin film capacitors were fabricated for dielectric energy storage. Thin films with excellent crystal quality (FWHM 0.021°) were prepared on (100) SrRuO3/SrTiO3 substrates by pulsed laser deposition. The out-of-plane lattice constant of the thin film was 4.110 ± 0.001 Å. An average maximum recoverable energy storage density, 88 ± 17 J cm−3 with an efficiency of 85% ± 6% at 1 kHz and 80 ± 15 J cm−3 with an efficiency of 91% ± 4% at 10 kHz, was achieved at room temperature. The capacitor was fatigue resistant up to 106 cycles at an applied electric field of 2 MV cm−1. These properties are linked to a low level of hysteresis and slow polarization saturation. PbZrO3-derived oxide thin film capacitors are promising for high efficiency and low loss dielectric energy storage applications.

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PbZrO3-based thin film capacitors with high energy storage efficiency

Son,

Udovenko,

Gaur

et al. 2024

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

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High-energy storage performance achieved in PbZrO3 thin films via Li+ doping and low-temperature annealing

Cited by 1 publication

References 48 publications

PbZrO3-based thin film capacitors with high energy storage efficiency

PbZrO3-based thin film capacitors with high energy storage efficiency

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