High entropy design: a new pathway to promote the piezoelectricity and dielectric energy storage in perovskite oxides

High Energy Storage Performance of PZO/PTO Multilayers via Interface Engineering

“…E AF and E FA change slightly with increasing n , while the current peaks are found to be broadened at a higher interface density. This is due to the fact that the switching current peak is closely associated with the domain size, compositional inhomogeneity, and interface-related factors. , With increasing the interface density n , a smaller domain size due to the decreased film layer thickness and the compositional inhomogeneity owing to the elemental diffusion are responsible for the observed broadened switching current peaks. , Meanwhile, with increasing n , there are more “dead layers” or “passive layers” existing around the interface, which possess a lower dielectric constant than the ferroelectric film, also leading to a broader switching current peak. The compressive strain in the PZO layer induced by the PTO layer can also weaken its antiferroelectric properties, which were reported both theoretically and experimentally. , To further reveal the reliability of the studied multilayer, the fatigue properties are evaluated at 1.5 MV/cm and shown in Figure b.…”

“…This is due to the fact that the switching current peak is closely associated with the domain size, compositional inhomogeneity, and interface-related factors. 18,39 With increasing the interface density n, a smaller domain size due to the decreased film layer thickness and the compositional inhomogeneity owing to the elemental diffusion are responsible for the observed broadened switching current peaks. 18,40 Meanwhile, with increasing n, there are more "dead layers" or "passive layers" existing around the interface, which possess a lower dielectric constant than the ferroelectric film, also leading to a broader switching current peak.…”

“…18,39 With increasing the interface density n, a smaller domain size due to the decreased film layer thickness and the compositional inhomogeneity owing to the elemental diffusion are responsible for the observed broadened switching current peaks. 18,40 Meanwhile, with increasing n, there are more "dead layers" or "passive layers" existing around the interface, which possess a lower dielectric constant than the ferroelectric film, also leading to a broader switching current peak. The compressive strain in the PZO layer induced by the PTO layer can also weaken its antiferroelectric properties, which were reported both theoretically and experimentally.…”

“…The prototype antiferroelectric PZO and ferroelectric PTO were chosen to study the interface engineering in multilayer structures due to the fact that they exhibit similar structures and their properties have been extensively studied. 18 In addition, PTO possesses a large maximum polarization P m of >80 μC/cm 2 , being beneficial to the energy storage performance. 19 The effect of the novel heterostructure on the energy storage density was evaluated.…”

“…Here, (PbZrO 3 /PbTiO 3 ) n ((PZO/PTO) n ) multilayer heterostructures with different interface densities were fabricated to enhance the E BDS and energy storage density, where the interface density is determined by the repetition period number n at a fixed thickness. The prototype antiferroelectric PZO and ferroelectric PTO were chosen to study the interface engineering in multilayer structures due to the fact that they exhibit similar structures and their properties have been extensively studied . In addition, PTO possesses a large maximum polarization P m of >80 μC/cm 2 , being beneficial to the energy storage performance .…”