Keywords: Schottky diode, radio frequency diodes, RFID, nanogap electrode, 13.56 MHz
Main TextRadio Frequency Identification (RFID) is a rapidly growing technology used for wireless communication and the identification of objects in close proximity through radio waves. [1] Although already a billion dollar industry [2] , RFID technology promises substantial further growth by adopting fully printable processing routes. However, there remain several bottlenecks to be overcome before this opportunity can be realised, particularly pertaining to the high frequency performance of printable electronics.RFID tags are generally composed of a coupling element, or antenna, a direct current (DC) rectifier and integrated circuitry (IC). The rectifying element is by far the most important component in terms of high-frequency (HF) operation, as the logic may take place at much J. Semple et al., Small (2016), DOI: 10.1002/smll.201503110 2 lower frequencies than the RF base carrier frequency. Different frequency bands exist for different applications, though the current target for printable RFID is the widely employed 13.56 MHz band. [1] Conventionally, complementary metal-oxide-semiconductor (CMOS) technology favours the use of diode-connected metal-oxide-semiconductor field-effect transistors (MOSFETs) for rectification within this element. However, Schottky diodes, with their inherently lower voltage operation, lower series resistance and exponential currentvoltage relationship offer a superior choice for rectifiers. [4] There has been extensive work carried out in recent years to develop high frequency organic Schottky diodes following the pioneering work of Steudel et al. who demonstrated pentacene-based Schottky diode rectifiers operating at 50 MHz. [5] More recently C60-basedSchottky diodes with a cut-off frequency (fCO) up to 0.7 GHz have also been reported. [6] Diodes based on metal oxide materials (particularly In-Ga-Zn-O) have recently emerged as a promising material, demonstrating device performance up to and above 1 GHz. [7][8][9] Despite such promising results, manufacturing of these conventional staggered diodes relies on vacuum processing, which renders them incompatible with cost-effective large-volume product integration. To address this important bottleneck, recent work has been devoted to solutionprocessable organic diodes with adequate performance. [10][11][12] Si nanoparticles have recently been demonstrated as a potential route to solution processed diodes with cut-off frequencies as high as 1.6 GHz.[13] However, demonstrating high yield manufacturing of solution-processed diodes with cut-off frequency 50 MHz still remains a significant challenge.The operational frequency of Schottky diodes is inversely proportional to the product of the series resistance (RS) and junction capacitance (Cj). A common approach to boosting the device cut-off frequency is by reducing RS through the use of a high charge carrier mobility J. Semple et al., Small (2016) However, there are inherent problems with implementing...