High-field cyclotron resonance studies of InMnAs-based ferromagnetic semiconductor heterostructures

Khodaparast, Giti A.; Kono, Junichiro; Matsuda, Yasuhiro H.; Ikeda, Satoru; Miura, N.; Wang, Y.J; Słupiński, T.; Oiwa, A.; Munekata, H.; Sun, Y.; Kyrychenko, F. V.; Sanders, G. D.; Stanton, C. J.

doi:10.1016/j.physe.2003.11.175

Cited by 13 publications

(14 citation statements)

References 12 publications

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“…Spectroscopic studies of isolated Mn͑d 5 + hole͒ impurities in the infrared region provided key information on the valence of Mn in ͑Ga,Mn͒As, as discussed in Sec. II.B, and cyclotron resonance measurements were used to study highly Mn-doped DMS materials in this frequency range ͑Mitsumori et al, 2003;Sanders et al, 2003;Khodaparast et al, 2004͒. Microwave EPR and FMR experiments mentioned in Secs.…”

Section: Magneto-opticsmentioning

confidence: 99%

Theory of ferromagnetic (III,Mn)V semiconductors

et al. 2006

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The body of research on ͑III,Mn͒V diluted magnetic semiconductors ͑DMSs͒ initiated during the 1990s has concentrated on three major fronts: ͑i͒ the microscopic origins and fundamental physics of the ferromagnetism that occurs in these systems, ͑ii͒ the materials science of growth and defects, and ͑iii͒ the development of spintronic devices with new functionalities. This article reviews the current status of the field, concentrating on the first two, more mature research directions. From the fundamental point of view, ͑Ga,Mn͒As and several other ͑III,Mn͒V DMSs are now regarded as textbook examples of a rare class of robust ferromagnets with dilute magnetic moments coupled by delocalized charge carriers. Both local moments and itinerant holes are provided by Mn, which makes the systems particularly favorable for realizing this unusual ordered state. Advances in growth and postgrowth-treatment techniques have played a central role in the field, often pushing the limits of dilute Mn-moment densities and the uniformity and purity of materials far beyond those allowed by equilibrium thermodynamics. In ͑III,Mn͒V compounds, material quality and magnetic properties are intimately connected. This review focuses on the theoretical understanding of the origins of ferromagnetism and basic structural, magnetic, magnetotransport, and magneto-optical characteristics of simple ͑III,Mn͒V epilayers, with the main emphasis on ͑Ga,Mn͒As. Conclusions are arrived at based on an extensive literature covering results of complementary ab initio and effective Hamiltonian computational techniques, and on comparisons between theory and experiment. The applicability of ferromagnetic semiconductors in microelectronic technologies requires increasing Curie temperatures from the current record of 173 K in ͑Ga,Mn͒As epilayers to above room temperature. The issue of whether or not this is a realistic expectation for ͑III,Mn͒V DMSs is a central question in the field and motivates many of the analyses presented in this review.

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Section: Magneto-opticsmentioning

confidence: 99%

Theory of ferromagnetic (III,Mn)V semiconductors

et al. 2006

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“…10,11 While CR has been used to study MBE-grown ferromagnetic InMnAs with a GaSb buffer layer on a GaAs substrate with T c ranging from 30 to 50 K, 12 the CR in the these MBE-grown ferromagnetic structures had features significantly different from the ones reported in this work. Because the InMnAs/GaSb interface is a type-II interface, with electrons and holes confined on opposite sides of the heterojunction, it is possible that in the MBE-grown InMnAs structures, the CR could have originated from or been influenced by carriers at the interface layer between InMnAs and GaSb.…”

Section: Introductionmentioning

confidence: 68%

Cyclotron resonance in ferromagnetic InMnAs and InMnSb

et al. 2013

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We present experimental and theoretical studies of the magneto-optical properties of p-type In 1−x Mn x As and In 1−x Mn x Sb ferromagnetic semiconductor films in ultrahigh magnetic fields oriented along [001]. Samples were fabricated by molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE). To model the results, we used an 8-band Pidgeon-Brown model generalized to include the wave vector dependence of the electronic states along k z as well as the s-d and p-d exchange interactions with the localized Mn d electrons. The Curie temperature is taken as an input parameter and the average Mn spin is treated in mean-field theory. We compared Landau level and band structure calculations with observed cyclotron resonance (CR) measurements. While differences between the CR measurements are seen for MBE and MOVPE samples, our calculations indicate that they arise from differences in the carrier densities. In addition, the difference in the carrier densities suggests significantly larger average spin for the MOVPE structures; this fact could be responsible for higher Curie temperatures in this material system.

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“…The spontaneous magnetization depends on the Mn concentration, x , and the z-component of the average Mn spin, S z . In determining the z-component of Mn spin, we can allow for the system to be either paramagnetic or ferromagnetic, this is described in reference [9,37]. The spin of the Mn ions is calculated using mean-field theory, with < S z > determined from:…”

Section: Theoretical Calculations and Modelingmentioning

confidence: 99%

High-field magnetic circular dichroism in ferromagnetic InMnSb and InMnAs: Spin-orbit-split hole bands andgfactors

et al. 2015

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Carrier-induced ferromagnetism in magnetic III-V semiconductors has opened up several opportunities for spintronic device applications as well as for fundamental studies of a material system in which itinerant carriers interact with the localized spins of magnetic impurities. In order to understand the hole mediated ferromagnetism, probing the band structure in these material systems is crucial. Here we present magnetic circular dichroism (MCD) studies on MOVPE grown InMnSb and InMnAs, both with the Curie temperatures above 300 K. The measurements were performed on samples with different Mn contents with the excitation energy tuned from 0.92-1.42 eV and external magnetic fields up to 31 Tesla. The large g-factors in these systems allow us to measure the MCD at relatively high temperatures (190 K). These measurements are compared with MCD calculations based on an 8 band Pidgeon-Brown model which is generalized to include the coupling between the electron/hole and the Mn spin in a ferromagnetic state. Comparison of the observed MCD with the theoretical calculations provides a direct method to probe the band structure including the temperature dependence of the spin-orbit split-off gap and g-factors, and to estimate the sp-d coupling constants.

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High-field cyclotron resonance studies of InMnAs-based ferromagnetic semiconductor heterostructures

Cited by 13 publications

References 12 publications

Theory of ferromagnetic (III,Mn)V semiconductors

Theory of ferromagnetic (III,Mn)V semiconductors

Cyclotron resonance in ferromagnetic InMnAs and InMnSb

High-field magnetic circular dichroism in ferromagnetic InMnSb and InMnAs: Spin-orbit-split hole bands andgfactors

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