High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique

Kambayashi, Hiroshi; Satoh, Yuichi; Kokawa, Takuya; Ikeda, Nariaki; Nomura, Takahiro; Kato, S.

doi:10.1016/j.sse.2010.10.001

Cited by 37 publications

(24 citation statements)

References 34 publications

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“…Junction field‐effect transistors (JFETs) or gate injection transistors (GITs) with p‐type (Al)GaN layer can deplete the 2DEG at the gate region . Selective area regrowth technique of AlGaN barrier layer realizes reduced access resistance and depleted 2DEG at gate region simultaneously …”

Section: Introductionmentioning

confidence: 99%

Improvement of Channel Mobility of GaN‐MOSFETs With Thermal Treatment for Recess Surface

Uesugi

Shindome

Kajiwara

et al. 2017

Physica Status Solidi (a)

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In this work, a thermal treatment technique under NH3 ambient for the recess surface of GaN‐MOSFETs is developed. Immediately following the fabrication process of the recess, the bottoms of these structures have rough surfaces and step‐terrace structures cannot be observed because of the plasma‐induced damage. However, clear step‐terrace structures are formed by the thermal treatment, and the RMS values of the surface roughness decrease from 0.26 to 0.14 nm, which is comparable to those of the as‐grown epitaxial film. In addition, it is confirmed that concentrations of impurity atoms introduced during the recess fabrication process are decreased by the thermal treatment. The channel mobility of the GaN‐MOSFETs without the thermal treatment is 118 cm2 Vs−1, whereas that of the device whose fabrication process includes the thermal treatment increased to 149 cm2 Vs−1. These results indicate that the thermal treatment under NH3 ambient is effective for reducing on‐state resistance of GaN‐MOSFETs.

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Section: Introductionmentioning

confidence: 99%

Improvement of Channel Mobility of GaN‐MOSFETs With Thermal Treatment for Recess Surface

Uesugi

Shindome

Kajiwara

et al. 2017

Physica Status Solidi (a)

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“…AlGaN/GaN HEMTs are very promising candidates for high frequency applications with high power and low noise, such as microwave and millimeter wave communications, imaging and radars [1]. While switching applications strongly demand normally-off operation [2], conventional HEMTs attain a channel populated with electrons at zero gate voltage making them normally-on. For the sake of achieving normallyoff HEMTs, several structures have been proposed such as recessed gate structures [3], fluorine ion treatment [4], pn junction gate structures [5], thin AlGaN barrier [6], AlN/GaN structure [7] and InGaN cap layer [8].…”

Section: Introductionmentioning

confidence: 99%

Scalable normally-off MIS-HEMT using fluorine implantation below the channel

Hamady

Morancho

Beydoun³

et al. 2014

2014 International Symposium on Power Electronics, Electrical Drives, Automation and Motion

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A new normally-off Metal-Insulator-Semiconductor High-Electron-Mobility-Transistor (MIS-HEMT) is proposed. The design is based on the implantation of fluorine ions in the GaN layer below the gate electrode under the AlGaN/GaN interface. Sensitivity analyses are carried out, showing the effects of the fluorine concentration and the thickness of the insulator on the threshold voltage. The limitations and scalability of this technique are pointed out.

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“…With the high field strength offered by GaN and the high mobility of the two-dimensional-electron-gas (2DEG) presented in the HEMT, this device can attain high breakdown voltage with low on state resistance and high switching frequency, surpassing the limitation of conventional silicon devices. While power switching applications strongly demand normally-off operation [2], conventional HEMTs attain a channel populated with electrons at zero gate voltage making them normally-on. Several normally-off structures have been proposed such as recessed gate structures [3], fluorine ion treatment [4], pn junction gate structures [5], thin AlGaN barrier [6], AlN/GaN structure [7] and Gate injection transistor [8].…”

Section: Introductionmentioning

confidence: 99%

P-doped region below the AlGaN/GaN interface for normally-off HEMT

Hamady

Morancho

Beydoun

et al. 2014

2014 16th European Conference on Power Electronics and Applications

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Development of a new design for enhancement-mode AlGaN/GaN HEMT is presented. The normally-off operation was achieved by burying a p-GaN region below the AlGaN/GaN interface only below the gate. Simulation results show that the proposed technique is capable of shifting the threshold voltage to positive values, making the HEMT normally-off. To address the advantages and drawbacks of the proposed structure a comparison with the normally-off Gate injection transistor (GIT) was performed. The proposed structure seems to be more effective when it comes to the p-doping concentration required to achieve normally-off operation and offers superior confinement for the two dimensional electron gas. On the other hand, the low forward gate voltage limits the increase of the threshold voltage.

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High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique

Cited by 37 publications

References 34 publications

Improvement of Channel Mobility of GaN‐MOSFETs With Thermal Treatment for Recess Surface

Improvement of Channel Mobility of GaN‐MOSFETs With Thermal Treatment for Recess Surface

Scalable normally-off MIS-HEMT using fluorine implantation below the channel

P-doped region below the AlGaN/GaN interface for normally-off HEMT

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