High‐Field Electron‐Drift Velocity in n‐Type Modulation‐Doped GaAs_0.96Bi_0.04 Quantum Well Structure

Abstract

The drift velocity (vdrift) of electrons in an n‐type modulation‐doped GaAs0.96Bi0.04/Al0.15Ga0.85As quantum well (QW) structure is determined for electric fields (F) ranging from ≈0.4 to 3.58 kV cm−1. The resulting vdrift characteristic exhibited a linear increase and reached ≈6 × 106 cm s−1 at low electric fields then almost saturated with increasing electric field. The electron drift mobility is determined as 2265 cm2 Vs−1 in the regime where the drift velocity is linear with respect to the electric field. The drift velocity saturates at ≈6.1 × 106 cm s−1 at the electric fields between ≈2.7 and 3.4 kV cm−1. Saturation of the drift velocity is attributed to the transfer of the electrons from the QW layer (GaAs0.96Bi0.04) with higher electron mobility to the barrier layer (Al0.15Ga0.85As) and satellite valley L‐valley with lower electron mobility, which initiates cooling of electrons via phonon scattering in the sample.

Spectroscopic and electronic investigations on tin(II) 2,3-naphthalocyanine/p-Si heterojunction for optoelectronic applications

“…According to the following equations, the refractive index of both SnNc/Glass and SnNc/p-Si can be estimated [48,49]: Figure 4 shows the temperature-dependent I-V characteristic of the SnNc/p-Si device under dark conditions. The maximum value of the current value in I-V measurement is kept lower to hinder the heating of the free carrier and photo-generated carrier during the measurement [50][51][52]. A depletion region is formed at the SnNc/p-Si interface, as concluded from the rectification behavior in I-V characteristics curves.…”

Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer

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the high tunability of the bandgap modifying valence band (VB) structure without compromising the electronic charge transport in the conduction band (CB) [8][9][10][11][12][13]. The strong Bi-dependence of all VBs (heavy and light hole and spinorbit bands) has revealed that the potential of Bi-containing alloys not only suppress Auger recombination in semiconductor lasers but also to be used in NIR and MIR applications [14].

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