High-Field Electronic Properties of Graphene

Zeitler, U.; Giesbers, A. J. M.; McCollam, A.; Kurganova, E. V.; Elferen, H. J. van; Maan, J.C.

doi:10.1007/s10909-009-0100-z

Cited by 4 publications

(3 citation statements)

References 28 publications

(42 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Further information about the nature of the lowest Landau levels in graphene has been recently obtained in thermal activation experiments, [9][10][11][12][13] showing that the zeroth Landau level (n = 0) is much sharper than the first and higher Landau levels. These observations are the main motivation of the theoretical study presented in this paper.…”

Section: Introductionmentioning

confidence: 99%

Correlated random hopping disorder in graphene at high magnetic fields: Landau level broadening and localization properties

2011

View full text Add to dashboard Cite

We study the density of states and localization properties of the lowest Landau levels of graphene at high magnetic fields. We focus on the effects caused by correlated long-range hopping disorder, which, in exfoliated graphene, is induced by static ripples. We find that the broadening of the lowest Landau level shrinks exponentially with increasing disorder correlation length. At the same time, the broadening grows linearly with magnetic field and with disorder amplitudes. The lowest Landau level peak shows a robust splitting, whose origin we identify as the breaking of the sublattice (valley) degeneracy.

show abstract

Section: Introductionmentioning

confidence: 99%

Correlated random hopping disorder in graphene at high magnetic fields: Landau level broadening and localization properties

2011

View full text Add to dashboard Cite

show abstract

“…For instance, magneto-optical experiments at the National High Magnetic field Laboratory (NHFML) in Tallahasse [7][8][9] were extremely useful to uncover graphene's Landau level structure. The Landau levels were also investigated by means of magneto-transport experiments at NHMFL [10][11][12][13] and at the High Field Magnet Laboratory (HFML) in Nijmegen [6,[13][14][15][16][17] and, in particular, it was further possible to unveil the fine structure of the zero-energy level in single-layer and bilayer graphene [10][11][12]16] to observe a fractional quantum Hall effect [18] and to measure the quantum Hall effect up to room temperature [13].…”

Section: Introductionmentioning

confidence: 99%

Graphene in high magnetic fields

Орлита

Escoffier

Plochocka

et al. 2013

Comptes Rendus. Physique

View full text Add to dashboard Cite

Carbon-based nano-materials, such as graphene and carbon nanotubes, represent a fascinating research area aiming at exploring their remarkable physical and electronic properties. These materials not only constitute a playground for physicists, they are also very promising for practical applications and are envisioned as elementary bricks of the future of the nano-electronics. As for graphene, its potential already lies in the domain of opto-electronics where its unique electronic and optical properties can be fully exploited. Indeed, recent technological advances have demonstrated its effectiveness in the fabrication of solar cells and ultra-fast lasers, as well as touch-screens and sensitive photo-detectors. Although the photo-voltaic technology is now dominated by silicon-based devices, the use of graphene could very well provide higher efficiency. However, before the applied research to take place, one must first demonstrates the operativeness of carbon-based nano-materials, and this is where the fundamental research comes into play. In this context, the use of magnetic field has been proven extremely useful for addressing their fundamental properties as it provides an external and adjustable parameter which drastically modifies their electronic band structure. In order to induce some significant changes, very high magnetic fields are required and can be provided using both DC and pulsed technology, depending of the experimental constraints. In this article, we review some of the challenging experiments on single nano-objects performed in high magnetic and low temperature. We shall mainly focus on the high-field magneto-optical and magneto-transport experiments which provided comprehensive understanding of the peculiar Landau level quantization of the Dirac-type charge carriers in graphene and thin graphite.

show abstract

“…The ν = −4 and ν = −8 QHSs energy gaps probed in CVD-grown bilayer graphene are also approximately fivefold smaller than values typically measured in exfoliated bilayer graphene on SiO 2 substrates. 21,22 We now turn to the magneto-transport properties of the twisted bilayer graphene samples, fabricated on bilayer graphene domains with a narrow Raman 2D band. Figure 3(a) shows an example of ρ xx and ρ xy vs. B data, measured in a twisted bilayer device at V BG = −40 V, corresponding to n = −8.4 × 10 12 cm −2 , and at T = 0.3 K; the sample mobility is µ = 7, 400 cm 2 •V −1 •s −1 .…”

mentioning

confidence: 99%

Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition

et al. 2012

View full text Add to dashboard Cite

We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a wide 2D band reveal quantum Hall states (QHSs) at filling factors ν = 4, 8, 12 consistent with a Bernal stacked bilayer, while magnetotransport measurements in bilayer domains defined by a narrow 2D band show a superposition of QHSs of two independent monolayers. The analysis of the Shubnikov-de Haas oscillations measured in twisted graphene bilayers provides the carrier density in each layer as a function of the gate bias and the inter-layer capacitance.

show abstract

High-Field Electronic Properties of Graphene

Cited by 4 publications

References 28 publications

Correlated random hopping disorder in graphene at high magnetic fields: Landau level broadening and localization properties

Correlated random hopping disorder in graphene at high magnetic fields: Landau level broadening and localization properties

Graphene in high magnetic fields

Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition

Contact Info

Product

Resources

About