High-fluence hyperthermal ion irradiation of gallium nitride surfaces at elevated temperatures

Finzel, Annemarie; Gerlach, Jürgen W.; Lorbeer, Jan; Frost, Frank; Rauschenbach, B.

doi:10.1016/j.apsusc.2014.09.006

Cited by 6 publications

(4 citation statements)

References 51 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Subjects to be investigated using the presented setup are the respective influence of ion mass and ion energy on the growth mode, topography, crystalline quality, defect structure, and luminescence properties of such films. The setup's area of application also comprises the investigation of, e.g., hyperthermal ion-beam nitridation processes, 34 hyperthermal ion-beam irradiation of specific surfaces, 35 and gentle surface cleaning or material removal by sputtering in the ion energy range slightly above the threshold energy for sputtering. Another wide area of application for this setup can be soft-landing preparative mass spectrometry.…”

Section: Discussionmentioning

confidence: 99%

Ion mass and energy selective hyperthermal ion-beam assisted deposition setup

Gerlach

Schumacher

Mensing

et al. 2017

Review of Scientific Instruments

Self Cite

View full text Add to dashboard Cite

For the synthesis of high-quality thin films, ion-beam assisted deposition (IBAD) is a frequently used technique providing precise control over several substantial film properties. IBAD typically relies on the use of a broad-beam ion source. Such ion sources suffer from the limitation that they deliver a blend of ions with different ion masses, each of them possessing a certain distribution of kinetic energy. In this paper, a compact experimental setup is presented that enables the separate control of ion mass and ion kinetic energy in the region of hyperthermal energies (few 1 eV - few 100 eV). This ion energy region is of increasing interest not only for ion-assisted film growth but also for the wide field of preparative mass spectrometry. The setup consists of a constricted glow-discharge plasma beam source and a tailor-made, compact quadrupole system equipped with entry and exit ion optics. It is demonstrated that the separation of monoatomic and polyatomic nitrogen ions (N and N) is accomplished. For both ion species, the kinetic energy is shown to be selectable in the region of hyperthermal energies. At the sample position, ion current densities are found to be in the order of 1 μA/cm and the full width at half maximum of the ion beam profile is in the order of 10 mm. Thus, the requirements for homogeneous deposition processes in sufficiently short periods of time are fulfilled. Finally, employing the described setup, for the first time in practice epitaxial GaN films were deposited. This opens up the opportunity to fundamentally study the influence of the simultaneous irradiation with hyperthermal ions on the thin film growth in IBAD processes and to increase the flexibility of the technique.

show abstract

Section: Discussionmentioning

confidence: 99%

Ion mass and energy selective hyperthermal ion-beam assisted deposition setup

Gerlach

Schumacher

Mensing

et al. 2017

Review of Scientific Instruments

Self Cite

View full text Add to dashboard Cite

show abstract

“…The thin films of GaN were grown on Kapton type polyimide substrates by ion beam assisted deposition (IBAD) process interconnected ultra-high vacuum chambers for the film deposition including reflection of high-energy electron diffraction (RHEED) for in situ studies of film growth. The ion beam assisted deposition of GaN on polyimide equals in principle the Ion Beam Assisted Molecular Beam Epitaxy (IBA-MBE) process described in former works [6]. The only difference is the amorphous character of the polyimides, which leads to a non-epitaxial growth.…”

Section: Methodsmentioning

confidence: 99%

“…Here, the special variant of the IBAD technology, Ion Beam Assisted Molecular Beam Epitaxy (IBA-MBE) deployed to prepare the thin GaN films with high crystalline quality. It can be proved that this method is very successful for the direct growth of epitaxial GaN films [6]…”

Section: (2020) Structural Characterization Of Thin Epitaxial Gan Filmentioning

confidence: 98%

Structural Characterization of Thin Epitaxial GaN Films on Polymer Polyimides Substrates by Ion Beam Assisted Deposition

Vidawati¹,

Gerlach²,

Herold³

et al. 2020

AMPC

View full text Add to dashboard Cite

The Epitaxial GaN thin films have been fabricated by Ion Beam Assisted Deposition (IBAD) process using nitrogen ions with hyperthermal energies on the polyimides polymer substrates. By applying with the Reflection of High-Energy Electron Diffraction (RHEED), Scanning Electron Microscopy (SEM) and Quantum Design Physical Properties Measurement System, the behaviour of hexagonal GaN thin films is investigated. The result showed that the high quality of the deposited GaN layers kept appearing for many parameters depending on the temperature greatly. The behaviour of high quality of epitaxial GaN coating on the polyimide polymer substrates is a promising material for optoelectronic devices and semiconductor devices application.

show abstract

“…In almost all experiments and ion beam technologies to fabricate thin films, ions with energy between 1 keV and 10 keV are utilized, although it is well-known that an increase of the ion energy leads to a significant increase of the defect concentration in the growing film. Consequently, a modern trend is to use so-called hyperthermal ions with kinetic energy smaller than 100 eV to modify the properties of thin films [ 2 , 3 ].…”

Section: Introductionmentioning

confidence: 99%

Ion Beam Assisted Deposition of Thin Epitaxial GaN Films

et al. 2017

View full text Add to dashboard Cite

The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy <100 eV) is capable to modify the characteristics of the growing film without generating a large number of irradiation induced defects. The nitrogen ion beam assisted molecular beam epitaxy (ion energy <25 eV) is used to deposit GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality.

show abstract

High-fluence hyperthermal ion irradiation of gallium nitride surfaces at elevated temperatures

Cited by 6 publications

References 51 publications

Ion mass and energy selective hyperthermal ion-beam assisted deposition setup

Ion mass and energy selective hyperthermal ion-beam assisted deposition setup

Structural Characterization of Thin Epitaxial GaN Films on Polymer Polyimides Substrates by Ion Beam Assisted Deposition

Ion Beam Assisted Deposition of Thin Epitaxial GaN Films

Contact Info

Product

Resources

About