2007
DOI: 10.4028/www.scientific.net/ssp.121-123.693
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High-Frequency Capability of Schottky-Barrier Carbon Nanotube FETs

Abstract: Abstract. The high-frequency capability of carbon nanotube field-effect transistors is investigated by simulating the small-signal performance of a device with negative-barrier Schottky contacts for the source and drain, and with a small, ungated region of nanotube between the end contacts and the edge of the wrap-around gate electrode. The overall structure is shown to exhibit resonant behaviour, which leads to a significant bias dependence of the small-signal capacitances and transconductance. This could lea… Show more

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Cited by 6 publications
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