High frequency characterization of through silicon via structure

Mong, Khoo Yee; Kee, Chua Eng; Guan, Lim Teck; Liu, En‐Xiao

doi:10.1109/eptc.2009.5416491

Cited by 2 publications

(3 citation statements)

References 2 publications

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“…Instead of single via characterization, test structures consisting of two port CPW lines on the same plane, two vias and an interconnecting signal line printed on the other plane to connect two vias are introduced [8][9][10][11][12]. In [8] and [9], two vias fed by the CPW line are connected to the CPW line printed on the other plane, where the top and bottom ground planes are also connected by additional vias. This creates various parasitic effects and makes it difficult to model the test structure.…”

Section: Introductionmentioning

confidence: 99%

“…Although those structures require a single via structure, it is difficult to practically measure scattering parameters (S-parameters) since the ports are placed on different layers (top and bottom). In [7][8][9][10][11][12], two port coplanar waveguide (CPW) lines of a test structure are placed on the same layer. In [7], a single via is placed on the center of the CPW line, and then the lumped elements of the via are extracted from the equivalent T-circuit model.…”

Section: Introductionmentioning

confidence: 99%

“…Many different test structure and de-embedding methods have been reported to extract the lumped elements (RLGC) of via interconnections [5][6][7][8][9][10][11][12]. In [5] and [6], a signal line printed on top of the substrate is connected with a bottom signal line through a via structure.…”

Section: Introductionmentioning

confidence: 99%

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High frequency characterization and analytical modeling of through glass via (TGV) for 3D thin-film interposer and MEMS packaging

Kim

Yoon

2013

2013 IEEE 63rd Electronic Components and Technology Conference

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Through glass via (TGV) buried in a Corning glass substrate is characterized and modeled at high frequency range for applications of 3D thin-film interposer and MEMS packaging. A micromachined microstrip ring resonator is used for substrate characterization and a TGV test structure fed by a coplanar waveguide (CPW) is designed and analyzed in the microwave range. The lumped element parameters (RLGC) of the TGV are extracted using 3D electromagnetic (EM) simulations and an equivalent π-circuit model. The TGV with a diameter of 90 μm and a height of 500 μm, which is buried in a glass substrate with a relative dielectric constant of 7.9 and a loss tangent of 0.008, has a resistance of 2.2 Ω, an inductance of 0.3 nH, a conductance of 0.01 S and a capacitance of 1.8 pF at 1 GHz. Also, an effect of the diameter and height of TGV is investigated. IntroductionAs wafer-level-packaging (WLP) industry is growing fast over years, through substrate vias instead of wire bonding is getting attraction for the integration of three dimensional integrated circuit (3DIC) integration. A through silicon via (TSV) was introduced for 3DIC with several advantages such as the perfect CTE match between the circuit layers and the substrates and high wiring capacity. However, a Si substrate has high dielectric loss and its conductivity is affected by the doping density and temperature. The cost for TSV is relatively high because of the material cost and the limited size of the Si wafer, and the expensive via fabrication process (BOSCHprocess) [1]. Also, a thin Si wafer is preferred for cost reason, while a thick Si wafer is used to minimize the CTE effect between Cu (17 ppm/K) or Ni (13 ppm/K) and Si (2.3 ppm/K), which can cause plastic deformation, stress induced voiding and stress migration [2]. Recently, a couple of glass companies including Corning, have reported high quality large, thin and low cost glass wafers and their usage for through glass via (TGV) applications. Electrical and mechanical properties of the glass wafer including CTE, can be varied with different glass composition depending on its applications and user requirements [3]. The overall advantages of TGV over TSV include high electrical insulation, low dielectric constant, high optical transparency, great hermeticity, low warping and resistance to corrosion, ultra-flat surface, and low material cost [4]. Therefore, the TGV technology has great potential for 3D integration of various high frequency electronics, radio frequency microelectromechanical systems (RF-MEMS), and other high frequency 3D systems. To effectively utilize TGV in such high frequency applications, TGV needs to be characterized and modeled in a high frequency spectrum of interest.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High frequency characterization and analytical modeling of through glass via (TGV) for 3D thin-film interposer and MEMS packaging

Kim

Yoon

2013

2013 IEEE 63rd Electronic Components and Technology Conference

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Extracting and Analyzing the S-Parameters of Vertical Interconnection Structures in 3D Glass Packaging

et al. 2023

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In order to effectively employ through-glass vias (TGVs) for high-frequency software package design, it is crucial to accurately characterize the S-parameters of vertical interconnection structures in 3D glass packaging. A methodology is proposed for the extraction of precise S-parameters using the transmission matrix (T-matrix) to analyze and evaluate the insertion loss (IL) and reliability of TGV interconnections. The method presented herein enables the handling of a diverse range of vertical interconnections, encompassing micro-bumps, bond-wires, and a variety of pads. Additionally, a test structure for coplanar waveguide (CPW) TGVs is constructed, accompanied by a comprehensive description of the equations and measurement procedure employed. The outcomes of the investigation demonstrate a favorable concurrence between the simulated and measured results, with analyses and measurements conducted up to 40 GHz.

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High frequency characterization of through silicon via structure

Cited by 2 publications

References 2 publications

High frequency characterization and analytical modeling of through glass via (TGV) for 3D thin-film interposer and MEMS packaging

High frequency characterization and analytical modeling of through glass via (TGV) for 3D thin-film interposer and MEMS packaging

Extracting and Analyzing the S-Parameters of Vertical Interconnection Structures in 3D Glass Packaging

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