2016 IEEE PELS Workshop on Emerging Technologies: Wireless Power Transfer (WoW) 2016
DOI: 10.1109/wow.2016.7772072
|View full text |Cite
|
Sign up to set email alerts
|

High frequency full-bridge Class-D inverter using eGaN® FET with dynamic dead-time control

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2017
2017
2022
2022

Publication Types

Select...
3
2

Relationship

0
5

Authors

Journals

citations
Cited by 7 publications
(1 citation statement)
references
References 9 publications
0
1
0
Order By: Relevance
“…Moreover, studies are conducted to enhance the power transfer capability and minimize the system size [150][151][152][153]. Considering class D inverter, both half-bridge and full-bridge structures are put forward [154][155][156][157]. Class D structures have lower voltage stress on the switching devices than class E structures; however, a complicated gate driver circuit and increased THD of the output voltage are the disadvantages [154].…”
Section: ) Invertersmentioning
confidence: 99%
“…Moreover, studies are conducted to enhance the power transfer capability and minimize the system size [150][151][152][153]. Considering class D inverter, both half-bridge and full-bridge structures are put forward [154][155][156][157]. Class D structures have lower voltage stress on the switching devices than class E structures; however, a complicated gate driver circuit and increased THD of the output voltage are the disadvantages [154].…”
Section: ) Invertersmentioning
confidence: 99%