High-frequency, high-sensitivity acoustic sensor implemented on ALN/Si substrate

Caliendo, Cinzia; Imperatori, P.

doi:10.1063/1.1604482

Cited by 53 publications

(32 citation statements)

References 9 publications

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“…Moreover, new devices have been proposed, in which the optical and electronic properties of the nitrides are modulated by SAWs. [2][3][4][5][6] Nitride films are typically grown on Si, sapphire, SiC, or diamond substrates. The spectrum of acoustic modes in a heterostructure 7 strongly depends on the mismatch of the elastic properties between the layer and the substrate, since the layer thickness is typically smaller than the penetration depth of the surface waves, which is on the order of the wavelength.…”

Section: Introductionmentioning

confidence: 99%

Anisotropy-induced polarization mixture of surface acoustic waves inGaN∕c-sapphire heterostructures

et al. 2005

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Section: Introductionmentioning

confidence: 99%

Anisotropy-induced polarization mixture of surface acoustic waves inGaN∕c-sapphire heterostructures

et al. 2005

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“…So far, the most common configurations for piezoelectric electro-acoustic sensors have been the bulk acoustic wave (BAW) devices and surface acoustic wave (SAW) devices. In the continuation of this discussion the focus will be on the BAW device, specifically the FBAR, due to the high domination for AlN, but also SAW and plate (Lamb) wave devices have been suggested for sensor applications (Caliendo and Imperatori 2003;Choujaa et al 1995;Duhamel et al 2006).…”

Section: Different Acoustic Vibration Modes In Solidsmentioning

confidence: 99%

Thin-film electro-acoustic sensors based on AlN and its alloys: possibilities and limitations

Wingqvist

2012

Microsyst Technol

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Sputter deposited aluminum nitride (AlN) thin films have played a central role for the successful development of the thin film electro-acoustic technology. The development has been primarily driven by one device-the thin film bulk acoustic resonator, with its primary use for high frequency filter applications for the telecom industry. Recently, increased piezoelectric properties in AlN through the alloying with scandium nitride have been identified both experimentally and theoretically. This opens up new possibilities for the thin film electro-acoustic technology.Here expectations and discussions are presented on acoustic FBAR sensor performance when based on AlN as well as on such AlN alloys to identify possible benefits and limitations. Inhere, the distinction is made between direct and in-direct (acoustic) use of the piezoelectric effect for sensor applications. These two approaches are described and compared in view of their advantages and possibilities. Especially, the indirect (or acoustic) use is identified as interesting for its versatility and good exploitation of the thin film technology to obtain highly sensitive sensor transducers. It is pointed out that the indirect approach can well be obtained internally in the piezoelectric material structure. Original calculations are presented to support the discussion.

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Section: Different Vibration Modes In Solidsmentioning

confidence: 99%

Electro-acoustic sensors based on AlN thin film: possibilities and limitations

Wingqvist

2011

SPIE Proceedings

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The non-ferroelectric polar wurtzite aluminium nitride (AlN) material has been shown to have potential for various sensor applications both utilizing the piezoelectric effect directly for pressure sensors or indirectly for acoustic sensing of various physical, chemical and biochemical sensor applications. Especially, sputter deposited AlN thin films have played a central role for successful development of the thin film electro-acoustic technology. The development has been primarily driven by one device -the thin film bulk acoustic resonator (FBAR or TFBAR), with its primary use for high frequency filter applications for the telecom industry. AlN has been the dominating choice for commercial application due to compatibility with the integrated circuit technology, low acoustic and dielectric losses, high acoustic velocity in combination with comparably high (but still for some applications limited) electromechanical coupling. Recently, increased piezoelectric properties (and also electromechanical coupling) in the AlN through the alloying with scandium nitride (ScN) have been identified both experimentally and theoretically. Inhere, the utilization of piezoelectricity in electro-acoustic sensing will be discussed together with expectation on acoustic FBAR sensor performance with variation in piezoelectric material properties in the parameter space around AlN due to alloying, in view of the Sc x Al 1-x N (0

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High-frequency, high-sensitivity acoustic sensor implemented on ALN/Si substrate

Abstract: Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors Appl. Phys. Lett. 96, 232106 (2010); 10.1063/1.3454279 Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering

Cited by 53 publications

References 9 publications

Anisotropy-induced polarization mixture of surface acoustic waves inGaN∕c-sapphire heterostructures

Anisotropy-induced polarization mixture of surface acoustic waves inGaN∕c-sapphire heterostructures

Thin-film electro-acoustic sensors based on AlN and its alloys: possibilities and limitations

Electro-acoustic sensors based on AlN thin film: possibilities and limitations

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