2015
DOI: 10.1088/1674-1056/24/5/057504
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High frequency magnetic properties of ferromagnetic thin films and magnetization dynamics of coherent precession

Abstract: We focus on the ferromagnetic thin films and review progress in understanding the magnetization dynamic of coherent precession, its application in seeking better high frequency magnetic properties for magnetic materials at GHz frequency, as well as new approaches to these materials’ characterization. High frequency magnetic properties of magnetic materials determined by the magnetization dynamics of coherent precession are described by the Landau–Lifshitz–Gilbert equation. However, the complexity of the equati… Show more

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Cited by 11 publications
(3 citation statements)
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References 190 publications
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“…It should be noted that the coefficient matrix M is not constant since it contains the variable h, which results in the difficulty of getting the analytical solution for Equation (8) directly. Therefore, the layerwise approximation is employed.…”
Section: Hamiltonian State Equationmentioning
confidence: 99%
See 1 more Smart Citation
“…It should be noted that the coefficient matrix M is not constant since it contains the variable h, which results in the difficulty of getting the analytical solution for Equation (8) directly. Therefore, the layerwise approximation is employed.…”
Section: Hamiltonian State Equationmentioning
confidence: 99%
“…As compared with natural multiferroic materials in single-phase compounds, multiferroic composites consisting of piezomagnetic and piezoelectric phases that possess a giant magnetoelectric (ME) effect have stimulated vast research activities due to their technological promise in novel multifunctional devices [3][4][5][6][7]. With the increasing requirements of working efficiency and energy saving, more advanced electromagnetic devices with higher working frequency and higher integration density have been developed [8,9]. However, it also brings great challenges to the manufacturing process of such devices, where any slight defect may lead to significant impact on the performance of the devices.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, the self-biased metallic SMFs prepared at IC compatible processes are the recent focus in this area. [11][12][13][14] Enhancing uniaxial magnetic anisotropy field H K of SMFs is the most viable route, as it can be increased by 1-2 orders of magnitude, compared to increasing 4πM S that is capped at 24.5 kG. [11] Various approaches were developed for achieving high H K in SMFs, such as composition gradient sputtering, [12,13,15] oblique sputtering (OS), [16][17][18][19] facing target sputtering, [20] exchange coupling, [21][22][23] and magnetoelectric (ME) coupling.…”
Section: Introductionmentioning
confidence: 99%