1994
DOI: 10.1109/96.311791
|View full text |Cite
|
Sign up to set email alerts
|

High frequency modeling and characterization of high performance DFB laser modules

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
4
0

Year Published

1998
1998
2013
2013

Publication Types

Select...
4
4
1

Relationship

0
9

Authors

Journals

citations
Cited by 13 publications
(4 citation statements)
references
References 8 publications
0
4
0
Order By: Relevance
“…Recently, material incorporating Nitrogen have been presented, showing very-promising results in terms of excellent T 0 [14,15,16,17]. Lateral structures have a terrific influence on the high temperature performance of buried structures, since they should prevent current leakage paths at high temperature, as well as introduce as low as possible parasitic effects [18,19]. PNPN stack layer represents the best solution in terms of temperature performances, even if the high parasitics of the stack should be dramatically reduced (by using trenches) to allow high-speed operation.…”
Section: Active Materials and Structures For High T 0 Devicesmentioning
confidence: 99%
“…Recently, material incorporating Nitrogen have been presented, showing very-promising results in terms of excellent T 0 [14,15,16,17]. Lateral structures have a terrific influence on the high temperature performance of buried structures, since they should prevent current leakage paths at high temperature, as well as introduce as low as possible parasitic effects [18,19]. PNPN stack layer represents the best solution in terms of temperature performances, even if the high parasitics of the stack should be dramatically reduced (by using trenches) to allow high-speed operation.…”
Section: Active Materials and Structures For High T 0 Devicesmentioning
confidence: 99%
“…Lee and others proposed a complete small-signal model of a butterfly-type 2.5 Gb/s DFB laser module [8]. Delpiano and others described a high-frequency model of a DFB laser module with which they analyzed and optimized the main factors contributing to the bandwidth limitation of the module [9]. A small-signal equivalent TO-type package laser module was presented by Zhu and others, where the effects of each element on the high-frequency response were analyzed [10].…”
Section: Introductionmentioning
confidence: 99%
“…Epi-side down bonding also eliminates the trade-off problem between high-frequency modulation (Delpiano et al, 1994) and temperature control. In a laser diode package, three forms of electrical parasitics were present; intrinsic diode, external chip and package parasitics.…”
mentioning
confidence: 99%